© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 6 1Publication Order Number:
MBR3100/D
MBR3100
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard−ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
High Surge Capacity
Pb−Free Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current TA = 100°C
(RqJA = 28°C/W, Refer to P.C. Board Mount ing,
Note 3)
IO3.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM 150 A
Operating and Storage Junction Temperature
Range (Note 1) (Reverse Voltage Applied) TJ, Tstg −65 to
+175 °C
Voltage Rate of Change (Rated VR) dv/dt 10 V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES, 100 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MBR3100 Axial Lead 500 Units / Bag
MBR3100RL Axial Lead 1500/Tape & Ree
l
MARKING DIAGRAM
A
MBR
3100
YYWWG
G
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MBR3100RLG Axial Lead
(Pb−Free) 1500/Tape & Ree
l
MBR3100G Axial Lead
(Pb−Free) 500 Units / Bag
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
A = Assembly Location
YY = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location
)
MBR3100
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3) RqJA 28 °C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 3.0 Amps, TL = 25°C)
(iF = 3.0 Amps, TL = 100°C)
vF0.79
0.69
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
TL = 25°C
TL = 100°C
iR0.6
20
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
0 2.01.0 3.0 4.0 5.0
0.5
1
1.5
2
2.5
P , AVERAGE POWER DISSIPATION (WATTS)
F (AV)
TA, AMBIENT TEMPERATURE (°C)
20 1006040 80
4
2
0
dc
120 140 160 180
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
VR REVERSE VOLTAGE (VOLTS)
02010 30 40
0.001
0.002
0.005
0.01
0.05
0.02
0.1
0.5
0.2
1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.20.1 0.3 0.4 0.5
5
0.2
0.1
3
2
1
0.70.6 0.8 0.9
0.3
0.05
0.5
I , REVERSE CURRENT (mA)
R
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
25°C
100°C
TJ = 150°C
50
30
20
10
1 1.2 1.31.1 50 60 80 90 100
0.0001
0.0002
0.0005
25°C
70
100°C
TJ = 150°C
125°C
1
3
5
6
7
8
3
3.5
4
dc
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selection
s
can be estimated from these curves if VR is su fficient below rated VR
.
SQUARE
WAVE
SQUARE
WAVE
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current*
Figure 3. Current Derating
(Mounting Method #3 per Note 3) Figure 4. Power Dissipation
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3
VR, REVERSE VOLTAGE (VOLTS)
020 6040 80
300
400
C, CAPACITANCE (pF)
200
40
80
50
100
Figure 5. Typical Capacitance
TJ = 25°C
f = 1 MHz
TYPICAL VALUES FOR RqJA IN STILL AIR
Data shown for thermal resistance junction−to−ambient
(RqJA) for the mountings shown is to be used as typical
guideline values for preliminary engineering, or in case the
tie point temperature cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8 1/4 1/2 3/4 RqJA
50 51 53 55 °C/W
°C/W
°C/W
58 59 61 63
28
NOTE 3 — MOUNTING DATA
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Mounting Method 1
P.C. Board where available
copper surface is small.
L L L
Mounting Method 2
Vector Push−In
Terminals T−28
L
Mounting Method 3
P.C. Board with
2−1/2 X 2−1/2
copper surface.
L = 1/2’
Board Ground Plane
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4
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267−05
ISSUE G
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
12
KA
K
D
B
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.287 0.374 7.30 9.50
B0.189 0.209 4.80 5.30
D0.047 0.051 1.20 1.30
K1.000 −−− 25.40 −−−
NOTES:
1. DIMENSIONS AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 267−04 OBSOLETE, NEW STANDARD 267−05.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR3100/D
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