FTD2019A Ordering number : ENN7911 FTD2019A N-Channel Silicon MOSFET Transistor Load Switching Applications Features * * * * Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS 12 V 6 A Drain Current (DC) ID Drain Current (Pulse) V IDP PD PW10s, duty cycle1% 40 A Mounted on a ceramic board (1000mm20.8mm)1unit 1.3 W PT Tch Mounted on a ceramic board (1000mm20.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.4 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 Ratings min typ Unit max 30 V 1 Forward Transfer Admittance VGS(off) yfs VGS= 8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=6A RDS(on)1 RDS(on)2 ID=6A, VGS=4V ID=3A, VGS=3.1V 19 26 m Static Drain-to-Source On-State Resistance 21 32 m ID=3A, VGS=2.5V VDS=10V, f=1MHz 23 34 m Input Capacitance RDS(on)3 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz Gate-to-Source Leakage Current Cutoff Voltage 10 A A 0.5 7.8 Marking : D2019A 1.3 13 V S 1430 pF 195 pF 38 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 93004 TS IM TB-00000046 No.7911-1/4 FTD2019A Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 24 ns Rise Time tr td(off) See specified Test Circuit. 165 ns See specified Test Circuit. 110 ns tf See specified Test Circuit. 130 ns Total Gate Charge Qg VDS=10V, VGS=4V, ID=6A 19 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=6A 3.2 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=4V, ID=6A Diode Forward Voltage VSD IS=6A, VGS=0 Turn-OFF Delay Time Fall Time Package Dimensions unit : mm 2155A 8 7 6 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 5 4.5 6.4 4 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 0.125 0.1 1.0 0.25 (0.95) 1 V 5 0.5 8 nC 1.2 Electrical Connection 0.425 0.95 3.0 0.65 4.5 0.83 Top view 1 2 3 4 SANYO : TSSOP8 Switching Time Test Circuit VDD=15V VIN 4V 0V ID=6A RL=2.5 VIN D VOUT PW=10s D.C.1% G FTD2019A P.G 50 S No.7911-2/4 FTD2019A ID -- VDS V 7 2 VGS=1.5V 5 4 3 2 1 --25C 3 6 Ta=7 5C 25C 4 Drain Current, ID -- A V 4.0V VDS=10V 3.0 Drain Current, ID -- A 5 ID -- VGS 8 2.5 5.0V 6 1 0 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- m 50 45 6A ID=3A 30 25 20 1.0 1.2 1.4 1.8 1.6 2.0 IT07369 RDS(on) -- Ta 35 30 5V =2. S G ,V 1V 3A =3. I D= , V GS 3A I D= 4.0V S= VG , 6A I D= 25 20 15 4 6 8 10 --75 10 Gate-to-Source Voltage, VGS -- V yfs -- ID 5 Forward Current, IF -- A C 25 3 2 = Ta 5C --2 C 75 1.0 7 5 3 25 50 75 100 125 150 175 IT07371 VGS=0 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 0 IF -- VSD 10 7 5 2 10 7 5 --25 Ambient Temperature, Ta -- C VDS=10V 3 --50 IT07370 75 C 25 C --2 5C 2 Ta = 0 Forward Transfer Admittance, yfs -- S 0.8 15 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.4 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V 1.0 IT07373 Ciss, Coss, Crss -- VDS 3 VDD=15V VGS=4V 3 2 f=1MHz 2 Ciss Ciss, Coss, Crss -- pF 1000 1000 7 5 3 2 td (off) tf 100 7 5 tr 7 5 3 Coss 2 100 7 5 Crss 3 td(on) 3 2 10 0.001 2 3 0.01 0.3 5 7 10 IT07372 SW Time -- ID 10000 7 5 Switching Time, SW Time -- ns 0.6 40 55 35 0.4 Gate-to-Source Voltage, VGS -- V Ta=25C 40 0.2 IT07368 RDS(on) -- VGS 60 Static Drain-to-Source On-State Resistance, RDS(on) -- m 0.40 2 10 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT07374 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT07375 No.7911-3/4 FTD2019A VGS -- Qg 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC 1.4 1.3 1.2 To t al 0.8 1 Di ss un it 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 10 7 5 3 2 ID=6A DC 140 160 IT07378 s 100 s 10 ms 10 0m s op era tio 1.0 7 5 3 2 0.1 7 5 3 2 <10s 1m n( Ta = Operation in this area is limited by RDS(on). 25 C ) Ta=25C Single pulse Mounted on a ceramic board (1000mm20.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V IT07376 Mounted on a ceramic board (1000mm20.8mm) 1unit 1.0 IDP=40A 0.01 0.01 20 Allowable Power Dissipation(FET1), PD -- W Allowable Power Dissipation, PD -- W 18 PD -- Ta 1.6 ASO 100 7 5 3 2 VDS=10V ID=6A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.0 5 IT07377 PD -- PD 1.4 1.3 M ou 1.2 nte do na 1.0 ce ram ic 0.8 bo ard (1 00 0m 0.6 m2 0 .8 mm 0.4 )1 un it 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.3 1.4 Allowable Power Dissipation(FET2), PD -- W IT07379 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2004. Specifications and information herein are subject to change without notice. PS No.7911-4/4