FTD2019A
No.7911-1/4
Features
•Low ON-resistance.
•2.5V drive.
•Mount height 1.1mm.
•Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±12 V
Drain Current (DC) ID6A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 40 A
Allowable Power Dissipation PD
Mounted on a ceramic board (1000mm
2
✕0.8mm)1unit
1.3 W
Total Dissipation PTMounted on a ceramic board (1000mm2✕0.8mm) 1.4 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS= ±8V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.5 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=6A 7.8 13 S
RDS(on)1 ID=6A, VGS=4V 19 26 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=3A, VGS=3.1V 21 32 mΩ
RDS(on)3 ID=3A, VGS=2.5V 23 34 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 1430 pF
Output Capacitance Coss VDS=10V, f=1MHz 195 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 38 pF
Marking : D2019A Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7911
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
93004 TS IM TB-00000046
FTD2019A N-Channel Silicon MOSFET Transistor
Load Switching Applications
FTD2019A
No.7911-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay Time td(on) See specified Test Circuit. 24 ns
Rise T ime trSee specified Test Circuit. 165 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 110 ns
Fall T ime tfSee specified Test Circuit. 130 ns
Total Gate Charge Qg VDS=10V, VGS=4V, ID=6A 19 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=6A 3.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=6A 4.5 nC
Diode Forward Voltage VSD IS=6A, VGS=0 0.83 1.2 V
Package Dimensions Electrical Connection
unit : mm
2155A
Switching Time Test Circuit
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
6.4
3.0 0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=6A
RL=2.5Ω
VDD=15V
VOUT
FTD2019A
VIN
4V
0V
VIN
8765
1234
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
Top view
FTD2019A
No.7911-3/4
ID -- VDS
IT07368
ID -- VGS
IT07369
0 2.01.80.2
RDS(on) -- VGS
IT07370
RDS(on) -- Ta
IT07371
0
10
60
35
40
45
50
55
102468 --75 --50 --25 0 25 50 75 100 125 150 175
0
0
6
0.400.05 0.10 0.15 0.20 0.25 0.30 0.35
1
2
3
4
5
0
8
0.4 0.6 0.8 1.0 1.2 1.4 1.6
3
2
1
4
5
6
7
30
20
25
15
10
40
35
25
30
20
15
SW Time -- ID
IT07374
IT07373
0.3 0.4 0.5 0.6 0.7 0.8 1.00.9
0.01
0.1
10
7
5
3
2
7
5
3
2
1.0
7
5
3
2
IF -- VSD
IT07372
yfs-- ID
0.10.01 23 57 23 5 57723
1.0 10
1.0
10
2
3
5
7
7
2
3
5
2
3
5
0.1
1000
100
10
3
2
5
7
3
2
5
7
3
2
5
7
10000
0.001 0.01 0.1
23 57 23 5723 57 723 5
1.0 10 0
10
100
3
7
5
3
2
1000
7
5
3
2
2
305 10152025
Ciss, Coss, Crss -- VDS
IT07375
4.0V
3.0V
2.5V
5.0V
VGS=1.5V
Ta=75°C
--25°C
25°C
VDS=10V
Ta=
--25
°
C
75°C
25
°
C
VGS=0
Ta=
75
°
C
--25°C
VDD=15V
VGS=4V
td(off)
td(on)
f=1MHz
Ciss
Coss
Crss
VDS=10V
Ta=25°C
ID=3A
25
°
C
tr
tf
6A
ID=
6
A, VGS=4.0V
ID=3A, VGS=2.5V
ID=
3
A, VGS=3.1V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ambient Temperature, Ta -- °C
FTD2019A
No.7911-4/4PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2004. Specifications and information herein are subject
to change without notice.
A S O
1.0
10
2
3
5
7
2
3
5
7
2
3
5
7
100
2
3
5
7
0.1
0.01 23 5 3 5723 5723 57
0.01 0.1 1.0 10 2
IT07377
VGS -- Qg
IT07376
0
020 40
0.2
0.4
0.6
0.8
60
1.2
80 100 120
1.6
1.0
1.4
1.3
140 160
PD -- Ta
IT07378
PD -- PD
0
00.2 0.4
0.2
0.6
0.6
0.4
0.8 1.0
0.8
1.0
1.4
1.3
1.2
1.41.2 1.3
IT07379
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
201412 16 18
4.0
428610
VDS=10V
ID=6A <10µs
1ms 100µs
100ms
10ms
ID=6A
DC operation (Ta=25
°C)
IDP=40A
Operation in this area
is limited by RDS(on).
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Ta=25°C
Single pulse
Mounted on a ceramic board (1000mm
2
✕0.8mm) 1unit
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation(FET2), PD -- W
Allowable Power Dissipation(FET1), PD -- W
Total Dissipation
1 unit
Mounted on a ceramic board (1000mm
2
✕0.8mm) 1unit
Mounted on a ceramic board (1000mm
2
✕0.8mm) 1unit