Bulletin I27298 01/07 IRKU/V105..PbF SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage TOTALLY LEAD-FREE Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pullout: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters Values Units IT(AV) @ 85C 105 A I T(RMS) 165 A I TSM @ 50Hz 1785 A @ 60Hz 1870 A @ 50Hz 15.91 KA 2s @ 60Hz 14.52 KA2s 159.1 KA 2s 2 I t I 2t V RRM range 400 to 1600 TSTG - 40 to 125 o TJ - 40 to130 o Document Number: 94481 V C C www.vishay.com 1 IRKU/V105..P Series Bulletin I27298 01/07 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Code Type number IRKU/V105 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit - V V V 04 400 500 400 08 800 900 800 12 1200 1300 1200 16 1600 1700 1600 IRRM IDRM 130C mA 20 On-state Conduction Parameters IT(AV) IRKU/V105 Max. average on-state current IT(RMS) Max. RMS on-state current. ITSM @ TC 105 165 77 180 o conduction, half sine wave, A DC 1785 t=10ms No voltage non-repetitive on-state 1870 t=8.3ms reapplied current 1500 Max. I 2t for fusing 100% VRRM t=8.3ms reapplied 2000 t=10ms TJ = 25oC, 2100 t=8.3ms no voltage reapplied 15.91 t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM 10.27 Max. I 2t for fusing (1) VT(TO) Max. value of threshold voltage (2) VTM A di/dt 2 KA s reapplied t=10ms TJ = 25oC, 18.30 t=8.3ms no voltage reapplied 159.1 0.80 0.85 2.37 2.25 K A2s V m Max. peak on-state 1.64 V Max. non-repetitive rate 150 Low level (3) TJ = TJ max High level (4) Low level (3) TJ = TJ max High level (4) ITM = x IT(AV) TJ = 25C IFM = x IF(AV) A/s I TM = x IT(AV) , I = 500mA, g t r < 0.5 s, tp > 6 s IH Max. holding current 200 IL Max. latching current 400 Document Number: 94481 t= 0.1 to 10ms, no voltage reappl., TJ =TJ max. T J = 25 o C, from 0.67 V DRM, current (1) I2t for time t = I2t x t . x x (3) 16.7% x x IAV < I < x IAV Initial TJ = TJ max. t=8.3ms Max. value of on-state of rise of turned on Initial TJ = TJ max. 20.00 slope resistance (2) voltage Sinusoidal half wave, t=10ms 11.25 rt TC = 85oC C 14.52 I2t Conditions Max. peak, one cycle 1570 I2t Units TJ = 25 oC, anode supply = 6V, mA resistive load, gate open circuit TJ = 25oC, anode supply = 6V,resistive load (2) Average power = VT(TO) x IT(AV) + rt x ( IT(RMS))2 (4) I > x IAV www.vishay.com 2 IRKU/V105..P Series Bulletin I27298 01/07 Triggering Parameters PGM IRK.U/V105 Max. peak gate power PG(AV) Max. average gate power IGM Max. peak gate current IGT VGD 3 A 10 Max. gate voltage 4.0 required to trigger 2.5 TJ = 25C 1.7 TJ = 125C Max. gate current required to trigger V 270 150 80 Max. gate voltage TJ = - 40C Anode supply = 6V resistive load TJ = - 40C TJ = 25C TJ = 125C mA Anode supply = 6V resistive load 0.25 V TJ = 125 C, rated VDRM applied 6 mA TJ = 125 oC, rated VDRM applied IRKU/V 105 Units 20 mA o that will not trigger IGD Conditions W 3 -VGM Max. peak negative gate voltage VGT Units 12 Max. gate current that will not trigger Blocking Parameters IRRM Max. peak reverse and IDRM off-state leakage current Conditions TJ = 130 oC, gate open circuit at VRRM, V DRM VINS RMS isolation voltage 2500 (1 min) dv/dt Max. critical rate of rise of off-state voltage (5) 50 Hz, circuit to base, all terminals V 3500 (1 sec) 500 shorted TJ = 130oC, linear to 0.67 VDRM , gate open circuit V/s (5) Available with dv/dt = 1000V/s, to complete code add S90 i.e. IRKU105/16AS90. Thermal and Mechanical Specifications Parameters IRKU/V105 TJ Junction operating temperature range - 40 to 130 Tstg Storage temperature range - 40 to 125 RthJC Max. internal thermal resistance, Units C 0.135 Per module, DC operation junction to case K/W RthCS Typical thermal resistance wt Mounting surface flat, smooth and greased 0.1 case to heatsink T Conditions A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Mounting torque 10% to heatsink 5 busbar 3 Approximate weight Nm 110 (4) Case style g (oz) TO-240AA JEDEC R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sine half wave conduction Devices IRKU/V105 Rect. wave conduction Units 180o 120 o 90o 60 o 30o 180o 120o 90 o 60 o 30 o 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 Document Number: 94481 C/W www.vishay.com 3 IRKU/V105..P Series Bulletin I27298 01/07 Ordering Information Table Device Code IRK U 105 1 2 3 / 16 S90 4 5 IRK.106 types With no auxiliary cathode P 6 1 - Module type 2 - Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - dv/dt code: * * Available with no auxiliary cathode. To specify change: e.g. : IRKU106/16P etc. No letter = dv/dt 500 Vs 6 - 105 to 106 S90 = dv/dt 1000 V/s P = Lead-Free Outline Table Dimensions are in millimeters and [inches] IRKU (1) + IRKV (1) - + (2) - (2) (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) + (3) K2 G2 (7) (6) NOTE: To order the Optional Hardware see Bulletin I27900 Document Number: 94481 www.vishay.com 4 IRKU/V105..P Series IRK.105.. Series R thJC (DC) = 0.27 K/ W 120 110 Conduction Angle 100 90 30 60 80 90 120 180 70 0 20 40 60 80 100 120 IRK.105.. Series R (DC) = 0.27 K/ W thJC 120 110 Conduction Period 100 90 30 60 90 80 120 70 0 20 RMSLimit 80 60 Conduction Angle 40 IRK.105.. Series Per Junction TJ = 130C 20 0 20 40 60 80 100 120 200 DC 180 120 90 60 30 180 160 140 120 100 RMSLimit 80 Conduction Period 60 IRK.105.. Series Per Junction T J = 130C 40 20 0 0 20 Average On-state Current (A) 1200 1100 1000 900 IRK.105.. Series Per Junction 800 700 1 10 100 Number Of Eq ua l Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Document Number: 94481 60 80 100 120 140 160 180 Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ= 130C @60 Hz 0.0083 s @50 Hz 0.0100 s 1300 40 Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 1400 80 100 120 140 160 180 Fig. 2 - Current Ratings Characteristics 120 1500 60 DC Fig. 1 - Current Ratings Characteristics 140 1600 40 180 Average On-state Current (A) 180 120 90 60 30 0 130 Average On-state Current (A) 160 100 Maximum Allowable Case Temperature (C) 130 Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Bulletin I27298 01/07 1800 Maximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Conduc tion May Not Be Maintained. Initial TJ = 130C No Volta ge Reapp lied Rated VRRMReapp lied 1600 1400 1200 1000 800 IRK.105.. Series Per Junction 600 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 5 IRKU/V105..P Series Bulletin I27298 01/07 Rt 180 (Sine) 180 (Rect) 1 0. W K/ 0. 2K /W R 0. 3 300 ta el -D 400 = 500 A hS Maximum Total Power Loss (W) 600 K/ W 0. 5 200 2 x IRK.105.. Series Single Phase Bridge Connected TJ = 130C 100 K/ W 0.7 K/ W 1 K/ W 2 K/ W 0 0 40 80 120 0 200 160 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Total Output Current (A) Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV) 800 R 700 60 (Rec t) SA 600 th Maximum Total Pow er Loss (W) 900 500 0.2 400 0. 1 K/ W -D el ta K/ W R 0.3 K/ W 300 3 x IRK.105.. Series 6-Pulse Midpoint Connection Bridge T J = 130C 200 100 0 = Io 0 0.5 K/ W 1 K/ 50 100 150 200 250 300 350 400 450 0 Total Output Current (A) W 20 40 60 80 100 120 140 Maximum Allow able Ambient Temperature (C) Fig. 8 - On-state Power Loss Characteristics Instantaneous On-state Current (A) 1000 100 TJ= 25C TJ= 130C 10 IRK.105.. Series Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Document Number: 94481 www.vishay.com 6 IRKU/V105..P Series 700 I TM = 200 A IRK.105.. Series TJ= 125 C 600 100 A 500 50 A 400 20 A 300 10 A 200 100 10 20 30 40 50 60 70 80 140 Maximum Reverse Rec overy Current - Irr (A) Ma ximum Reverse Recovery Charge - Qrr (C) Bulletin I27298 01/07 90 100 120 J 100 A 100 50 A 80 20 A 10 A 60 40 20 10 Rate Of Fall Of On-state Current - di/ dt (A/ s) 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 10 - Recovery Charge Characteristics Transient Thermal Impedanc e Z thJC (K/W) I TM = 200 A IRK.105.. Series T = 125 C Fig. 11 - Recovery Current Characteristics 1 Steady State Value: R thJC = 0.27 K/ W (DC Operation) 0.1 IRK.105.. Series Per Junc tion 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 12 - Thermal Impedance Z thJC Characteristics Rec tangular gate pulse a)Rec ommended load line for rated di/d t: 20 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Rec ommended load line for <= 30% rated di/ dt: 15 V, 40 ohms tr = 1 s, tp >= 6 s 10 (1) PGM (2) PGM (3) PGM (4) PGM TJ = -40 C TJ = 125 C 1 = 200 W, tp = 300 s = 60 W, tp = 1 ms = 30 W, tp = 2 ms = 12 W, tp = 5 ms (a) (b ) TJ = 25 C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 IRK.105.. Series 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 13- Gate Characteristics Document Number: 94481 www.vishay.com 7 IRKU/V105..P Series Bulletin I27298 01/07 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 01/07 Document Number: 94481 www.vishay.com 8 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier's Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier(R), IR(R), the IR logo, HEXFET(R), HEXSense(R), HEXDIP(R), DOL(R), INTERO(R), and POWIRTRAIN(R) are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1