Major Ratings and Characteristics
Parameters Values Units
IT(AV) @ 85°C 105 A
IT(RMS) 165 A
ITSM @ 50Hz 1785 A
@ 60Hz 1870 A
I2t @ 50Hz 15.91 KA2s
@ 60Hz 14.52 KA2s
I2√t 159.1 KA2√s
VRRM range 400 to 1600 V
TSTG - 40 to 125 oC
TJ- 40 to130 oC
105 A
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ THYRISTOR
IRKU/V105..PbF SERIES
Bulletin I27298 01/07
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
TOTALLY LEAD-FREE
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior me-
chanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of sur-
face roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, temperature and motor
speed control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-
out: they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Document Number: 94481
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1
IRKU/V105..P Series
Bulletin I27298 01/07
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 130°C
-VVVmA
04 400 500 400
IRKU/V105 08 800 900 800 20
12 1200 1300 1200
16 1600 1700 1600
IT(AV) Max. average on-state 180o conduction, half sine wave,
current TC
= 85oC
IT(RMS)Max. RMS on-state DC
current. @ TC77 °C
ITSM Max. peak, one cycle 1785 t=10ms No voltage
non-repetitive on-state 1870 t=8.3ms reapplied
current 1500 t=10ms 100% VRRM
1570 t=8.3ms reapplied
2000 t=10ms TJ = 25oC,
2100 t=8.3ms no voltage reapplied
I2t Max. I2t for fusing 15.91 t=10ms No voltage
14.52 t=8.3ms reapplied
11.25 t=10ms 100% VRRM
10.27 t=8.3ms reapplied
20.00 t=10ms TJ = 25oC,
18.30 t=8.3ms no voltage reapplied
I2√t Max. I2√t for fusing (1) 159.1 K A2√s t= 0.1 to 10ms, no voltage reappl., TJ
=TJ
max.
VT(TO) Max. value of threshold 0.80 Low level (3)
voltage (2) 0.85 High level (4)
rtMax. value of on-state 2.37 Low level (3)
slope resistance (2) 2.25 High level (4)
VTM Max. peak on-state ITM
= π x IT(AV)
voltage IFM
= π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,
of rise of turned on 150 A/μsI
TM =π x IT(AV), Ig
= 500mA,
current tr < 0.5 μs, tp > 6 μs
IHMax. holding current 200 TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
Initial TJ = TJ max.
V
mΩ
1.64 V
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Sinusoidal
half wave,
Initial TJ = TJ max.
105
Parameters IRKU/V105 Units Conditions
On-state Conduction
A
A
165
mA
KA2s
TJ = TJ max
TJ = TJ max
TJ = 25°C
(1) I2t for time tx = I2√t x √tx. (2) Average power = VT(TO) x IT(AV) + rt
x ( IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV (4) I > π x IAV
Document Number: 94481
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2
IRKU/V105..P Series
Bulletin I27298 01/07
TJJunction operating temperature
range
Tstg Storage temperature range - 40 to 125
RthJC Max. internal thermal resistance, 0.135 Per module, DC operation
junction to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink 5
busbar 3
wt Approximate weight 110 (4) g (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRKU/V105 Units Conditions
- 40 to 130
0.1
(5) Available with dv/dt = 1000V/μs, to complete code add S90 i.e. IRKU105/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
°C
K/W
Nm
Mounting surface flat, smooth and greased
IRRM Max. peak reverse and
IDRM off-state leakage current 20 mA TJ = 130oC, gate open circuit
at VRRM, VDRM
VINS RMS isolation voltage 2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise TJ = 130oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
Triggering
PGM Max. peak gate power 12
PG(AV) Max. average gate power 3
IGM Max. peak gate current 3 A
-VGM Max. peak negative gate voltage 10
VGT Max. gate voltage 4.0 V TJ = - 40°C
required to trigger 2.5 TJ = 25°C
1.7 TJ = 125°C
IGT Max. gate current 270 TJ = - 40°C
required to trigger 150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
0.25 V
6mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
TJ
= 125oC,
rated VDRM applied
TJ
= 125oC,
rated VDRM applied
Parameters IRK.U/V105 Units Conditions
Parameters IRKU/V 105 Units Conditions
Blocking
V
500 V/μs
Sine half wave conduction Rect. wave conduction
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRKU/V105 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W
ΔR Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Document Number: 94481
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3
IRKU/V105..P Series
Bulletin I27298 01/07
IRK U 105 / 16 S90 P
1234
5 6
* * Available with no auxiliary cathode.
To specify change: 105 to 106
e.g. : IRKU106/16P etc.
IRK.106 types
With no auxiliary cathode
K1
G1
(4) (5)
+
K2
G2
-
-
(1)
(2)
(3)
(7) (6)
+
K2 G2
-
K1
G1
+
(1)
(2)
(4) (5) (7) (6)
(3)
Outline Table
Dimensions are in millimeters and [inches]
IRKU IRKV
Device Code
1- Module type
2- Circuit configuration (See Circuit Configuration table below)
3- Current code * *
4- Voltage code (See Voltage Ratings table)
5- dv/dt code: S90 = dv/dt 1000 V/μs
No letter = dv/dt 500 Vμs
6- P = Lead-Free
Ordering Information Table
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 94481
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4
IRKU/V105..P Series
Bulletin I27298 01/07
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
70
80
90
100
110
120
130
0 20 40 60 80 100 120
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduc tion Angle
IRK.105.. Serie s
R (DC) = 0.27 K/ W
thJC
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduc tion Period
IRK.105.. Se rie s
R (DC) = 0.27 K/ W
thJC
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140 160 180
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduc tion Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
IRK.105.. Se ries
Per Junction
T = 130°C
J
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120
RM S Li m i t
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
Conduc tion Angle
IRK.105.. Se rie s
Per Junction
T = 130°C
J
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
700
800
900
1000
1100
1200
1300
1400
1500
1600
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Init ia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
IRK.105.. Se ries
Per Junc t io n
600
800
1000
1200
1400
1600
1800
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Init ia l T = 130°C
No Voltage Reapplied
Rated V Reapplied
Of Conduc tion May Not Be Maintained.
J
RRM
IRK.105.. Series
Per Junction
Document Number: 94481
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5
IRKU/V105..P Series
Bulletin I27298 01/07
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
Fig. 8 - On-state Power Loss Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
0.5 K
/W
0.3 K/W
R
= 0.1 K
/W - Delta R
thS
A
0.2 K/W
0.7 K
/W
1 K
/W
2 K
/W
0
100
200
300
400
500
600
0 40 80 120 160 200
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.105.. Series
Single Phase Bridge
Connected
T = 1 3 0 ° C
J
1
10
100
1000
0 0.5 1 1.5 2 2.5 3 3.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 13 0 ° C
J
IRK.105.. Series
Per Junction
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
1 K/W
0.5 K
/W
0.3 K
/W
R
= 0.1 K/W - Delta R
thS
A
0.2 K/ W
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200 250 300 350 400 450
Total Output Current (A)
Maximum Total Pow er Loss (W)
60°
(Rect)
3 x IRK.105.. Se ries
6-Pulse Midp oint
Connection Bridge
T = 130°C
J
I
o
Document Number: 94481
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6
IRKU/V105..P Series
Bulletin I27298 01/07
Fig. 10 - Recovery Charge Characteristics Fig. 11 - Recovery Current Characteristics
Fig. 12 - Thermal Impedance ZthJC Characteristics
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq ua re Wave Pulse Dura tio n (s)
thJC
Transient Thermal Impedance Z (K/W)
IRK.105.. Series
Per Junction
Steady State Value:
R = 0.27 K/W
(DC Operation)
thJC
20
40
60
80
100
120
140
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Rec overy Current - Irr (A)
Ra t e Of Fa ll Of Fo rw a rd Curre n t - d i/ d t (A/ µs)
100 A
50 A
I = 200 A
TM
20 A
10 A
IRK.105.. Series
T = 125 °C
J
100
200
300
400
500
600
700
10 20 30 40 50 60 70 80 90 100
100 A
50 A
Ra te Of Fall Of On-state Current - d i/ d t (A/ µs)
Maximum Reverse Recovery Charge - Qrr (µC)
I = 200 A
TM
20 A
10 A
IRK.105.. Se rie s
T = 125 °C
J
Fig. 13- Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
(4) (3) (2) (1)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD
IGD Frequency Limited by PG(AV)
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rat ed di/ d t: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
Rectangular gate pulse
IRK.105.. Se ries
Document Number: 94481
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7
IRKU/V105..P Series
Bulletin I27298 01/07
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
01/07
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
Document Number: 94481
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8
Legal Disclaimer Notice
Vishay
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
