TLP181
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Toshiba Electronic Devices & Storage Corporation
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP181
Office Machine
Programmable Controllers
AC Adapter
I/O Interface Board
The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable for
surface mount assembly.
TLP181 consist of a photo transistor optically coupled to an infrared emitting
diode. Since TLP181 is smaller than DIP package, it’s suitable for high-
density surface mounting applications such as programmable controllers.
• Collector-emitter voltage: 80 V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolation voltage: 3750 Vrms (min)
• Operation Temperature: -55 to 110 ˚C
• UL-recognized: UL 1577, File No.E67349
• cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
• VDE-approved: EN 60747-5-5 (Note 1)
Note 1: When a VDE approved type is needed,
please designate the Option(V4).
Pin Configuration (top view)
6
1: Anode
3: Cathode
4: Emitter
6: Collector
4
1
3
Unit:
mm
TOSHIBA
11-4C1
Weight: 0.09 g (Typ.)
TLP181
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Toshiba Electronic Devices & Storage Corporation
Current Transfer Ratio
Classification
(Note 1)
Current Transfer Ratio (%)
(IC/IF)
Marking Of Classification
IF = 5mA, VCE = 5V, Ta = 25°C
Min Max
Blank 50 600 Blank ,Y■,YE,G,G■,GR,B,BL,GB
Rank Y 50 150 YE, Y■
Rank GR 100 300 GR, G, G■
Rank BL 200 600 BL, B
Rank GB 100 600 GB , GR , G, G■, BL , B
Rank YH 75 150 Y■
Rank GRL 100 200 G
Rank GRH 150 300 G■
Rank BLL 200 400 B
Note 1: EX, Rank GB: TLP181 (GB)
Note: Application, type name for certification test, please use standard product type name, i, e.
TLP181 (GB): TLP181
TLP181
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Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current IF 50 mA
Forward current detating (Ta ≥ 89°C) ΔIF/°C -1.4 mA/°C
Pulse forward current (100μs pulse, 100pps) IFP 1 A
Reverse voltage VR 5 V
Diode power dissipation PD 100 mW
Diode power dissipation derating (Ta ≥ 89°C)
Δ
PD/°C -2.8 mW/°C
Junction temperature Tj 125 °C
Detector
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Collector power dissipation derating (Ta ≥ 25°C) ΔPC/°C -1.5 mW/°C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55 to 125 °C
Operating temperature range Topr -55 to 110 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔPT/°C -2.0 mW/°C
Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) BVS 3750 V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two-terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 48 V
Forward current IF ― 16 20 mA
Collector current IC ― 1 10 mA
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP181
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
Detector
Collector-emitter
breakdown voltage V(BR)CEO IC = 0.5 mA 80 — — V
Emitter-collector
breakdown voltage V(BR)ECO IE = 0.1 mA 7 — — V
Collector dark current ICEO
VCE = 48 V,
( Ambient light below 1000 lx) (Note 1) — 0.01
(2)
0.1
(10) μA
VCE = 48 V, Ta = 85 °C,
( Ambient light below 1000 lx) (Note 1) — 2
(4)
50
(50) μA
Capacitance
(collector to emitter)
CCE V = 0 V, f = 1 MHz — 10 — pF
Note 1: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn Typ. Max Unit
Current transfer ratio IC/IF IF = 5 mA, VCE = 5 V
Rank GB
50 — 600
%
100 — 600
Saturated CTR IC/IF(sat) IF = 1 mA, VCE = 0.4 V
Rank GB
— 60 —
%
30 — —
Collector-emitter saturation voltage VCE(sat)
IC = 2.4 mA, IF = 8 mA — — 0.4
V
IC = 0.2 mA, IF = 1 mA
Rank GB
— 0.2 —
— — 0.4
Off-state collector current IC(off) VF = 0.7 V, VCE = 48 V — 1 10 μA
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance
(input to output) CS VS = 0 V, f = 1 MHz — 0.8 — pF
Isolation resistance RS VS = 500 V, R.H. ≤ 60 % 1×1012 1014 — Ω
Isolation voltage BVS AC, 60 s 3750 — — Vrms
TLP181
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Toshiba Electronic Devices & Storage Corporation
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10 V, IC = 2 mA
RL = 100 Ω
— 2 —
μs
Fall time tf — 3 —
Turn-on time ton — 3 —
Turn-off time toff — 3 —
Turn-on time tON
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA
— 2 —
μs
Storage time ts — 25 —
Turn-off time tOFF — 40 —
Fig. 1 Switching time test circuit
tOFF
tON
VCE
IF
tS
4.5V
0.5V
IF VCC
RL
VCE
VCC
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Toshiba Electronic Devices & Storage Corporation
PC – Ta
200
-20 0 20 40 60 80 100 120
160
120
80
40
0
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
Pulse width ≤ 100μs
Ta = 25°C
10-3 10-2 10-1 100
30
50
100
300
1000
500
ΔVF/ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF/ΔTa ( m V/ °C)
-3.2
-0.4
0.1
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
0.3 0.5 1 3 5 10 30 50
IFP – VFP
Pulse forward voltage VFP (V)
1000
1
0.6
Pulse width ≤ 10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6 3.0
Pulse forward current IFP (mA)
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
-20
80
60
40
20
0
0 20 40 60 80 100 120
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.001
0
10
1
0.1
0.01
0.4 0.8 1.2 1.6 2
-25°C 85°C 25
°C
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP181
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Toshiba Electronic Devices & Storage Corporation
Collector current IC (mA)
IC – VCE
50
0
Collector-emitter voltage VCE (V)
0
40
30
20
10
2 4 6 8 10
50mA
30mA
20mA
15mA
10mA
PC (max)
IF = 5mA
Ta = 25°C
Collector-emitter voltage VCE (V)
IC – VCE
30
0
0 1.0
0.2 0.4 0.6 0.8
20
10
Collector current IC (mA)
50mA
Ta = 25°C
40mA
30mA
20mA
10mA
5mA
2mA
IC – IF
Forward current IF (mA)
0.1
0.1
0.3
0.5
1
3
5
10
30
50
100
0.3 0.5 1 3 5 10 30 50
Sample A
Sample B
Ta = 25°C
VCE = 10V
VCE = 5V
VCE = 0.4V
Collector current IC (mA)
Forward current IF (mA)
1000
10
IC/IF – IF
0.1 0.3 0.5 1 3 5 10 30 50
30
50
100
300
500
VCE = 10V
VCE = 5V
VCE = 0.4V
Ta = 25°C
Current transfer ratio
IC/IF (%)
Sample B
Sample A
Collector dark current ICEO (μA)
ICEO – Ta
0
101
VCE = 48V
5V
10V
24V
20 40 60 80 100
Ambient temperature Ta (°C)
100
10-1
10-2
10-3
10-4
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP181
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Toshiba Electronic Devices & Storage Corporation
Collector-emitter saturation
voltage VCE(sat) (V)
VCE(sat) – Ta
0.24
0
Ambient temperature Ta (°C)
-40
0.20
0.12
0.08
0.04
-20 0 40 80 100 20 60
0.16
IF = 1mA
IC = 0.2mA
IC – Ta
100
1
-20 100
0 20 40 80
30
5
Collector current IC (mA)
VCE = 5V
60
0.1
0.3
0.5
3
10
50
1mA
0.5mA
5mA
10mA
IF = 25mA
Ambient temperature Ta (°C)
Switching Time – RL
Load resistance RL (kΩ)
1
10
30
50
100
300
500
1000
3 5 30 50
Switching time (μs)
5
3
1
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
ts
tON
100 10
Switching time (μs)
Switching Time – Ta
0
100
-20 20 40 60 80
Ambient temperature Ta (°C)
30
10
1
0.5
0.1
100
0.3
3
5
50 tOFF
ts
tON
IF = 16mA
VCC = 5V
RL = 1.9kΩ
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP181
9 2019-06-17
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Toshiba Electronic Devices & Storage Corporation
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