SBR2M30P1 2.0A SBR(R) SURFACE MOUNT SUPER BARRIER RECTIFIER PowerDI(R)123 Features * * * * * * * * * * * * Mechanical Data * * Ultra Low Leakage Current Excellent High Temperature Stability Superior Reverse Avalanche Capability Patented Interlocking Clip Design for High Surge Current Capacity Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability 175C Operating Junction Temperature 16KV ESD Protection (HBM, 3B) 25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge) Lead Free Finish, RoHS Compliant (Note 1) "Green" Molding Compound (No Br, Sb) Qualified to AEC-Q 101 Standards for High Reliability * * * * * * (R) Case: PowerDI 123 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Polarity Indicator: Cathode Band Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.018 grams (approximate) Top View Maximum Ratings @TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See Figure 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Avalanche Energy (TJ = 25C, IAS = 5A, L = 8.5 mH) Repetitive Peak Avalanche Energy (1s, 25C) Symbol VRRM VRWM VRM VR(RMS) IO Value Unit 30 V 21 2.0 V A IFSM 75 A EAS 105 mJ PARM 1100 W Symbol Value Unit Thermal Characteristics Characteristic Maximum Thermal Resistance Thermal Resistance Junction to Soldering (Note 2) Thermal Resistance Junction to Ambient (Note 3) Thermal Resistance Junction to Ambient (Note 4) Operating and Storage Temperature Range Notes: RJS RJA RJA 5 183 125 TJ, TSTG -65 to +175 C/W C 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7. 2. Theoretical RJS calculated from the top center of the die straight down to the PCB cathode tab solder junction. 3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. 4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf SBR and PowerDI are registered trademarks of Diodes Incorporated. SBR2M30P1 Document number: DS30704 Rev. 7 - 2 1 of 4 www.diodes.com October 2008 (c) Diodes Incorporated SBR2M30P1 Electrical Characteristics @TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - V Reverse Breakdown Voltage (Note 5) Forward Voltage Drop VF - 0.26 0.37 0.42 0.16 0.29 0.36 0.30 0.41 0.46 0.19 0.32 0.39 V - 10 20 1.7 3.1 100 200 8 12 A A mA mA Leakage Current (Note 5) IR Notes: Test Condition IR = 200A IF = 0.1A, TJ = 25C IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 0.1A, TJ = 125C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C VR = 5V, TJ = 25C VR = 30V, TJ = 25C VR = 5V, TJ = 125C VR = 30V, TJ = 125C 5. Short duration pulse test used to minimize self-heating effect. IF, INSTANTANEOUS FORWARD CURRENT (mA) 1.2 PD, POWER DISSIPATION (W) 1 0.8 0.6 0.4 0.2 0 1 2 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 1 Forward Power Dissipation TA=100 C TA= -65 C 100 TA=25 C 10 1 0.1 3 1.0E+02 T A=175C 1,000 0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 10,000 1.0E+01 f = 1.0MHz TA=175 C 1.0E+00 CT, TOTAL CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT (mA) 0 10,000 TA=100 C 1.0E-01 1.0E-02 TA=25 C 1.0E-03 1.0E-04 1,000 100 10 1.0E-05 T A= -65C 1.0E-06 0 5 10 15 20 25 30 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics 1 0 3 6 9 12 15 18 21 24 27 30 VR, DC REVERSE VOLTAGE (V) Fig. 4 Total Capacitance vs. Reverse Voltage SBR and PowerDI are registered trademarks of Diodes Incorporated. SBR2M30P1 Document number: DS30704 Rev. 7 - 2 2 of 4 www.diodes.com October 2008 (c) Diodes Incorporated SBR2M30P1 250 TA, DERATED AMBIENT TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (A) 2.5 225 200 2.0 175 150 1.5 125 100 1.0 0.5 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 5 Forward Current Derating Curve 200 50 25 0 0 10 5 25 20 15 VR, DC REVERSE VOLTAGE (V) Fig. 6 Operating Temperature Derating 30 10,000 PARM, MAXIMUM AVALANCHE POWER (W) PARM, AVALANCHE PEAK PULSE POWER DERATING IN PERCENTAGE (%) 120 75 100 1,000 80 60 40 20 0 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Pulse Derating Curve 200 100 10 1 0.001 0.01 0.1 1 10 100 1,000 TP, PULSE DURATION (uS) Fig. 8 Maximum Avalanche Power Curve SBR and PowerDI are registered trademarks of Diodes Incorporated. SBR2M30P1 Document number: DS30704 Rev. 7 - 2 3 of 4 www.diodes.com October 2008 (c) Diodes Incorporated SBR2M30P1 Ordering Information (Note 6) Part Number SBR2M30P1-7 Notes: Case (R) PowerDI 123 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code 2006 T Month Code Jan 1 2007 U Feb 2 YM 2M3 2008 V Mar 3 2M3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2009 W Apr 4 2010 X May 5 2011 Y Jun 6 Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions B (R) PowerDI 123 C Dim E D H L L1 E L2 Min Max Typ A 3.50 3.90 3.70 B 2.60 3.00 2.80 C 1.63 1.93 1.78 D 0.93 1.00 0.98 E 0.85 1.25 1.00 H 0.15 0.25 0.20 L 0.55 0.75 0.65 L1 1.80 2.20 2.00 L2 0.95 1.25 1.10 All Dimensions in mm A Suggested Pad Layout X1 Y2 G X2 Y1 Dimensions G X1 X2 Y1 Y2 Value (in mm) 1.0 2.2 0.9 1.4 1.4 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. SBR and PowerDI are registered trademarks of Diodes Incorporated. SBR2M30P1 Document number: DS30704 Rev. 7 - 2 4 of 4 www.diodes.com October 2008 (c) Diodes Incorporated