THOMSON/ DISTRIBUTOR OFE D Bl 502.873 0003371 6 i 1-33-09 Bipolar Transistors (cont'd) 4-12 LIMIT CONDITIONS CHARACTERISTICS - BREAKDOWN VOLTAGE ; Device | Collector Typical Current Typical . RCA | Polarity } Disst- | Current Collector | Collector | Emitter | Gain Gain Case Outline Type and pation | Contin. Peak toBase to Emitter | to Base Bandwidth | Style No. Material uous (Surge) Product Py lc low Veso Veeo Veso Nee Vee Ie f; W A A Vv v V v A MHz SK9364/56 NPN Si 30 3 6 100 80 6 >500 4 05 ~ 15 70-220 = T-036 $K9365/68 PNP Si 250 -16 30 400 250 - 15-60 -4 -8 >4 T0-3 T-043.. - SK9366/54 NPN Si 50 8 16 150 150 5 150 - 2 0.6 30-70 =70-220 = 1-036 SK9367/55 PNP Si 50 -8 ~16 150 150 -5 150 -2 -05 30-85 0-220 1-036 SK9368/325f NPN Si 8@ 1.5 _ 130 110 5 30-150 2 0.2 60 10-39 T-005 $K9369/323t PNP Si 8@ -1.5 130 110 - 30-150 -2 -0.2 60 70-39 T-005 $K9371/63 NPN Si 0.4 0.04 20 12 3 30-200 10 0.03 5000 T-012 SK9372/64 NPN Si 0.376 860.038 25 15 3 60 0.005 4500 T-012 $K9373/65 NPN Si 0.18 0.025 20 15 2 50 10 0.014 5000 T-013 SK9374t NPNSi 150 12 15 1000*** 500 8 6-40 3 8 15-60 10-3 T-043 $K9387/233 NPN Si 0.625 05 - 40 40 3 75 1 04 >250 0-92 T-021 SK9389 NPN Si 100 9 15 200 140 5 60-200 1 >7 T0-3P T-048 SK9390 PNPSi - 100 -9 15 200 140 -5 60-200 -5 -1 >7 ~-T0-3P T-048 SK9391t NPN Si 40 7 15 150 100 7 90-260 2 3 >30 T0-220 = T-036 $K9392/80 NPN Si 8 i - 700 300 12 30-300 5 0.01 13 T0-202J T-030 SKS407t NPN Si 0.5 0.15 0.4 60 50 5 240 6 0.001 100 = T0-92 T-017 sK9408 NPN Si 20 1.5 3 180 160 5 60-200 5 0.15 140 = DPAK T-044 sk9409 PNP Si 20 -1.5 -3 180 160 -5 60-200 - -0.15 140 -DPAK T-044 SK9411/389 NPNSi 100 4 1500 1500* 5 >5 5 3 >4 = 10-3 T-043 $K9412/255 NPN Si 2 1 _ 325 300 6 10-50 10 0.5 60 10-237 -T-063 SK9413/36t NPN Si 100 12 15 160 140 6 >60 5 1 16 TO-3P T-048 $K9415/37 PNP Si 100 12 -15 160 140 -6 >60 -5 -1 15 T0-3P T-048 SK9418 NPN Si 0.75 2 2.5 40 32 5 120-350 3 0.5 100 EPAK T-010 Dual $K9420/84 PNP Si 0.4Tot 0.5 _- 60 -30 -4 100-300 10 -0.5 250 J0-78P _T-060 $K9422 NPN Si 70 6 15 1500 1500 5 15 10 3 _ T0-3P T-048 Dual $K9423/40 NPNSi 0.4 Tot 0.05 100 100 5 >400 6 0.004 150 SIP T-057 Dual $K9424/41 PNPSi 0.4Tot -005 100 100 -5 >400 -6 - 0.001 150 SIP T-057 Dual . $K9425/42 NPNSi 0.4 Tot 01 _- 50 50 5 >400 6 0.001 150 SIP 7-057 Dual . $K9426/43 PNPSi 0.4Tot -0.1 - 50 -50 -5 >400 -6 0.001 160 SIP T-057 * Vees t See Switching Times Chart, page 4-22 @T, = 0.8A Integral Damper Diode ' atk Veey Dimensional Outlines and Terminal Diagrams 0.370 _J 0.205 (9.40) (5.201. j 0.1 09.036 . [ros | gaeg cea | 838 ais re) 229 ( 0.27 | emiTTER e| 4L_ e} ru (7 INDEX ~T 0,500 MIN f F 0.735 F 0.735 ad 2.701 T t (18.67) 6.67} O.SQOMIN _| 03 0.190 0.190 (Ol ee (Zs) (4.83) 0,075 (4.83) 0.075 | 0.010 (L901 0.010 (1.90) 8 BCE 10.254) (0.254) | ex -| b-o,, - Tt ~ c T-o10 T-012 T~O13 T-O17THOMSON/ DISTRIBUTOR O4E D 5 9026473 O003397e2 & i T- 33-079 Dimensional Outlines and Terminal Diagrams i 0.240 6.09}; Hee one 1] 0.210 _ (5.33) ll | Mesa oppo 000 | | | l E c E 3 Ch, eek: T-021 T-023 0.147 DIA 0.420 4 0.190 (3.73) a, 00.66) (4,82) 0.625 5.87) | 10-220 0.500 MIN {12.70} oF \Ne C (FLANGE! TOP VIEW T-036 rei] em] | Pei et 0,22 ---4 (5.6) 0.41 {10,5} | | 0.875 J (22.23) 0.105 0.285- (2.67) 7 (724 f- O.13t OIA : (3.33) ++ 1.008 (25.53) 0.475 MIN 2,07) TOP VIEW T-029 TO-3 +- 0.450 (143) an L . 0.312 MIN (7.92) . E 0.161 DIA / {4.09} f+ 0.25 0.09 J (6.5) (2.3) 0.440 a (Tha) | 0.216 5.8) 3p (Fuah GE) | 0.675 LAN 7.15) 7 pce 1.197 9,99 (30.40) '. T-043 T-044 |_0.370_J (9.4) t 0.335 (8.5) 0.205 T RR Tt Se i B28 TO-H 0.168 500 . =H Ost (2.7) J 237}1 (4.19) SEATING 5 PLANE mi 12:30) Ecs }} 0,360 \ 000 {9.14) T-060 T-063 0.388 4 (9.76) + 0.165 TI 33h (4.19) > . 01220 A 122 Df (3.10) 142 (28.45) TOP VI | Le EMITTER COLLECTOR BASE ew T-030 (20) 0.79 (20) B Cc ECE zal 0.215 (5.45) T-048