Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diod
e
DAP222
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Ultra small mold type. (EMD3)
2) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 1.2 V IF=100mA
IR- - 0.1 μAV
R=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr - - 4 ns VR=6V , IF=5mA , RL=50
Parameter Limits
Reverse voltage (repetitive peak) 80
Reverse voltage (DC) 80
Forward current (single) 300
Average rectified forward voltage (single) 100
Surge current t=1us4
Storage temperature 55 to 150
Power dissipation 150
Junction temperature 150
Capacitance between terminals
Reverse recovery time
Parameter Conditions
Forward voltage
Reverse current
4.0±0.1 2.0±0.05 φ1.55±0.1
      0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.5±0.1
1.8±0.2
0.3±0.1
1.8±0.1
5.5±0.2
0.9±0.2
0~0.1
φ1.5 0.1
0
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory)
(3)
1.6±0.2
1.6±0.2
1.0±0.1
0.8±0.1
0.5 0.5
(2) (1)
0.15±0.05
0.7±0.1
0.55±0.1
0.1Min
0~0.1
0.2±0.1
  -0.05
0.3±0.1
    0.05
EMD3
1.0
0.7
0.5
0.5
0.7
0.7
0.6 0.6
1.3
1/2 2011.06 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAP222
0
1
2
3
4
5
6
7
8
9
10
AVE:1.47kV
C=200pF
R=0
C=100pF
R=1.5k
AVE:2.98kV
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=100mA I
F
=10A
300us
time
Mounted on epoxy board
1
10
100
0.1 1 10 100
t
Ifsm
0
1
2
3
4
5
1 10 100
0
1
2
3
4
5
6
7
8
9
10
AVE:1.93ns
Ta=25
V
R
=6V
I
F
=5mA
RL=50
n=10pcs
0
5
10
15
20
AVE:2.50A
8.3ms
Ifsm 1cyc
0
1
2
3
4
5
6
7
8
9
10
AVE:1.98pF
0
10
20
30
40
50
60
70
80
90
100
850
860
870
880
890
900
0.1
1
10
0 5 10 15 20
0.001
0.01
0.1
1
10
100
1000
10000
0 1020304050607080
Ta=125
Ta=25
Ta=25
Ta=75
Ta=150
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta=25
Ta=125
Ta=75
Ta=25
Ta=150
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT : I
F
(mA)
REVERSE CURRENT : I
R
(nA)
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE : V
F
(mV)
REVERSE CURRENT : I
R
(nA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
I
FSM
DISRESION MAP
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
f=1MHz
Ta=25
V
R
=70V
n=10pcs
AVE:4.310nA
Ta=25
V
R
=6V
f=1MHz
n=10pcs
AVE:870.1mV
Ta=25
I
F
=100mA
n=30pcs
8.3ms
Ifsm
1cyc
8.3ms
2/2 2011.06 - Rev.B
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes