
Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diod
DAP222
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Ultra small mold type. (EMD3)
2) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 1.2 V IF=100mA
IR- - 0.1 μAV
R=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr - - 4 ns VR=6V , IF=5mA , RL=50Ω
Parameter Limits
Reverse voltage (repetitive peak) 80
Reverse voltage (DC) 80
Forward current (single) 300
Average rectified forward voltage (single) 100
Surge current (t=1us)4
Storage temperature 55 to 150
Power dissipation 150
Junction temperature 150
Capacitance between terminals
Reverse recovery time
Parameter Conditions
Forward voltage
Reverse current
4.0±0.1 2.0±0.05 φ1.55±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.5±0.1
1.8±0.2
0.3±0.1
1.8±0.1
5.5±0.2
0.9±0.2
0~0.1
φ1.5 0.1
0
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory)
(3)
1.6±0.2
1.6±0.2
1.0±0.1
0.8±0.1
0.5 0.5
(2) (1)
0.15±0.05
0.7±0.1
0.55±0.1
0.1Min
0~0.1
0.2±0.1
-0.05
0.3±0.1
0.05
EMD3
1.0
0.7
0.5
0.5
0.7
0.7
0.6 0.6
1.3
1/2 2011.06 - Rev.B