BD130 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 60 V 100 V 100 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage IC Collector Current 15 A IB Base Current 7 A PT Power Dissipation 100 Watts TJ Junction Temperature -55 to +200 C TS VBE=-1.5 V @ TC = 45 Storage Temperature COMSET SEMICONDUCTORS 1/3 BD130 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value Unit 1.55 C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) VCEO(BR) Collector-Emitter Breakdown Voltage (*) VCE(SAT) Collector-Emitter Saturation IC=4 A, IB=0.4 A Voltage (*) ICEX IEBO VBE fT Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Base-Emitter Voltage (*) Transition Frequency IC=200 mA, IB=0 VCE=100 V VBE=-1.5 V Min Typ Mx Unit 60 V - 0.5 - - 1.1 V 0.5 mA VCE=100 V VBE=-1.5 V TCASE=150C - - 30 VEB=7 V - - 5.0 mA IC=4.0 A, VCE=4.0V - 0.95 1.8 V IC=0.1 A, VCE=4 V COMSET SEMICONDUCTORS 1.1 MHz 2/3 BD130 Symbol Ratings Static Forward Current Transfer Ratio (*) h21E Test Condition(s) VCE=4.0 V, IC=4.0 A Min Typ Mx Unit 20 - 70 (*) Pulse Width 300 s, Duty Cycle 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 3/3 -