COMSET SEMICONDUCTORS 1/3
BD130
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 100 V
VCEX Collector-Emitter Voltage VBE=-1.5 V 100 V
ICCollector Current 15 A
IBBase Current 7 A
PTPower Dissipation @ TC = 45° 100 Watts
TJJunction Temperature
TSStorage Temperature
-55 to +200 °C
The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO-
3 metal case. It is intended for power switching circuits, series and
shunt regulators, output stages and high fidelity amplifiers.
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING APPLICATIONS
COMSET SEMICONDUCTORS 2/3
BD130
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJ-C Thermal Resistance, Junction to Case 1.55 °C/W
ELECT RICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
VCEO(BR) Collector-Emitter
Break do wn Voltag e (*) IC=200 mA, IB=0 60 V
VCE(SAT) Collector-Emitter Saturation
Voltage (*) IC=4 A, IB=0.4 A -0.51.1V
VCE=100 V
VBE=-1.5 V --
0.5
ICEX
Collector-Emitter Cutoff
Current VCE=100 V
VBE=-1.5 V
TCASE=150°C --30
mA
IEBO Emitter-Base Cutoff Current VEB=7 V --5.0mA
VBE Base-Emitter Voltage (*) IC=4.0 A, VCE=4.0V - 0.95 1.8 V
fTTransition Frequency IC=0.1 A, VCE=4 V 1.1 MHz
COMSET SEMICONDUCTORS 3/3
BD130
Symbol Ratings Test Condition(s) Min Typ Mx Unit
h21E Static Forward Current
Transfer Ratio (*) VCE=4.0 V, IC=4.0 A 20 -70 -
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
