STD13003
HIGH VOLTAG E FAST-SWITCHING
NPN POWER TRANSISTOR
■REVE RSE PINS O UT Vs S TAN DARD IP AK
(TO-251) / DPAK (TO-252) PACKAGES
■MEDIUM VOLTAGE CAPABILITY
■LOW SPREA D OF DYNA M IC PARA ME TERS
■MINI MUM LO T- TO-LOT SP R E AD F O R
RELIABLE OPERATION
■VERY HIGH SWITCHING SPEED
■SURFACE -M O UNT ING DPA K (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
■THRO UG H-HO LE I PA K (TO-251) PO WE R
P ACK A GE IN TU BE (Suf fix "- 1")
APPLICATIONS:
■ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■SWITC H MODE POW ER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium volt age ca pability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RB SOA .
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
®
INT E R NAL SCH E M ATI C DIAG RA M
September 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 700 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage
(IC = 0, IB = 0.75 A, tp < 10 µs, Tj < 150oC) BVEBO V
ICCollector Current 1.5 A
ICM Collector Peak Current (tp < 5 ms) 3 A
IBBase Current 0.75 A
IBM Base Peak Current (tp < 5 ms) 1.5 A
Ptot Total Dissipation at Tc = 25 oC20W
T
stg Storage Temp erature -65 to 150 oC
TjMax. Operating Junctio n Te mperature 150 oC
3
2
1
IPAK
TO-251
(Suff ix "-1" )
1
3
DPAK
TO-252
(Suffix "T 4")
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-ca se Max
Thermal Resistance Junction-ambient Max 6.25
100
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VBE = -1.5V) VCE = 70 0V
VCE = 70 0V Tj = 125oC1
5mA
mA
BVEBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 mA 9 18 V
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
L = 25 mH 400 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 0.5 A IB = 0.1 A
IC = 1 A IB = 0.25 A
IC = 1.5 A IB = 0.5 A
0.5
1
3
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 0.5 A IB = 0.1 A
IC = 1 A IB = 0.25 A 1
1.2 V
V
hFE∗DC Current Ga in IC = 0.5 A VCE = 2 V
Group A
Group B
IC = 1 A VCE = 2 V
8
15
5
20
35
25
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
IC = 1 A VCC = 125 V
IB1 = 0.2 A IB2 = -0.2 A
Tp= 25 µs
1
4
0.7
µs
µs
µs
tsINDUCTIVE LOAD
Storage Time IC = 1 A IB1 = 0.2 A
VBE = -5 V L = 50 mH
Vclamp = 300 V 0.8 µs
∗ P ulsed: P ulse durati on = 300µs, duty c ycle = 1.5 %
Note : P roduct i s pre-selected in DC current gain (GROU P A a n d GROUP B). S TMic roelect ronics reserves the right to ship either groups
according t o production availabilit y. P lease c ontact your nearest STMicroelect ronics sales office for delivery details.
STD13003
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Safe O perat ing Areas
DC Current Gai n
Col lector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Em itt er Sat uration Volta ge
STD13003
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Inductive Fall Time Inductive Storage Time
Reverse Biased SOA
STD13003
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Figure 1: Induct ive Load Switc hi ng Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
1) Fast electronic switch
2) Non-inductive Resistor
STD13003
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A3 0.70 1.30 0.028 0.051
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
B3 0.85 0.033
B5 0.30 0.012
B6 0.95 0.037
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.237 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 15.90 16.30 0.626 0.642
L 9.00 9.40 0.354 0.370
L1 0.80 1.20 0.031 0.047
L2 0.80 1.00 0.031 0.039
V1 10
o
10
o
P032N_E
TO-251 (IPAK) MECHANICAL DATA
STD13003
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
STD13003
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich may resul t fro m its u se. N o li cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject t o change without notice. This publication supersedes and r eplaces all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroel ectronics.
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STD13003
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