NSBC115TPDP6T5G - ON Semiconductor

July, 2008 − Rev. 1

1Publication Order Number:

NSBC114EPDP6/D

NSBC114EPDP6T5G Series

Preferred Devices

Dual Digital Transistors

(BRT)

Complementary Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBC114EPDP6T5G

series, two complementary BRT devices are housed in the SOT−963

package which is ideal for low power surface mount applications

where board space is at a premium.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Available in 4 mm, 8000 Units Tape and Reel

•These are Pb−Free Devices

•These are Halide−Free Devices

MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1

and Q2, − minus sign for Q1 (PNP) omitted)

Rating Symbol Value Unit

Collector-Base Voltage VCBO 50 Vdc

Collector-Emitter Voltage VCEO 50 Vdc

Collector Current IC100 mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

(1)(2)(3)

(4) (5) (6)

http://onsemi.com

MARKING

DIAGRAM

Device Package Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NSBC114EPDP6T5G SOT−963

(Pb−Free)

8000 /

Tape & Reel

X = Specific Device Code

M = Date Code

G= Pb−Free Package

SOT−963

CASE 527AD

NSBC114EPDP6T5G Series

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

SINGLE HEATED

Total Device Dissipation

TA = 25°C (Note 1)

Derate above 25°C

PD231

1.9

mW/°C

Thermal Resistance (Note 1)

Junction-to-Ambient

RqJA 540 °C/W

Total Device Dissipation

TA = 25°C (Note 2)

Derate above 25°C

PD269

2.2

mW/°C

Thermal Resistance (Note 2) Junction-to-Ambient RqJA 464 °C/W

DUAL HEATED (Note 3)

Total Device Dissipation

TA = 25°C (Note 1)

Derate above 25°C

PD339

2.7

mW/°C

Thermal Resistance (Note 1)

Junction-to-Ambient

RqJA 369 °C/W

Total Device Dissipation

TA = 25°C (Note 2)

Derate above 25°C

PD408

3.3

mW/°C

Thermal Resistance (Note 2) Junction-to-Ambient RqJA 306 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

1. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

2. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

3. Dual heated values assume total power is sum of two equally powered channels.

DEVICE MARKING AND RESISTOR VALUES

Device Package

Marking

(Clockwise Rotation) R1 (kW)R2 (kW)

NSBC114EPDP6T5G SOT−963 L 10 10

NSBC124EPDP6T5G SOT−963 R (90°) 22 22

NSBC144EPDP6T5G SOT−963 K (180°) 47 47

NSBC114YPDP6T5G SOT−963 Q (90°) 10 47

NSBC115TPDP6T5G SOT−963 J (180°) 100 ∞

NSBC123TPDP6T5G SOT−963 A (180°) 2.2 ∞

NSBC143EPDP6T5G SOT−963 V (90°) 4.7 4.7

NSBC143ZPDP6T5G SOT−963 Y (90°) 4.7 47

NSBC144WPDP6T5G SOT−963 T (90°) 47 22

NSBC123JPDP6T5G SOT−963 D (180°) 2.2 47

NSBC114EPDP6T5G Series

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)

TCharacteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc

Emitter-Base Cutoff Current NSBC114EPDP6T5G

(VEB = 6.0 V, IC = 0) NSBC124EPDP6T5G

NSBC144EPDP5T5G

NSBC114YPDP6T5G

NSBC115TPDP6T5G

NSBC123TPDP6T5G

NSBC143EPDP6T5G

NSBC143ZPDP6T5G

NSBC144WPDP6T5G

NSBC123JPDP6T5G

IEBO −

−

0.5

0.2

0.1

0.2

0.1

4.0

1.5

0.18

0.13

0.2

mAdc

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc

Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc

ON CHARACTERISTICS (Note 4)

DC Current Gain NSBC114EPDP6T5G

(VCE = 10 V, IC = 5.0 mA) NSBC124EPDP6T5G

NSBC144EPDP5T5G

NSBC114YPDP6T5G

NSBC115TPDP6T5G

NSBC123TPDP6T5G

NSBC143EPDP6T5G

NSBC143ZPDP6T5G

NSBC144WPDP6T5G

NSBC123JPDP6T5G

hFE 35

160

100

140

350

200

140

−

Collector-Emitter Saturation Voltage

(IC = 10 mA, IB = 0.3 mA)

NSBC114EPDP6T5G

NSBC124EPDP6T5G

NSBC144EPDP6T5G

NSBC114YPDP6T5G

NSBC144WPDP6T5G

NSBC123JPDP6T5G

(IC = 10 mA, IB = 1 mA) NSBC115TPDP6T5G

NSBC143EPDP6T5G

NSBC143ZPDP6T5G

NSBC123TPDP6T5G

VCE(sat)

−

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

NSBC114EPDP6T5G/NSBC124EPDP6T5G

NSBC114YPDP6T5G/NSBC123TPDP6T5G

NSBC143EPDP6T5G/NSBC143ZPDP6T5G

NSBC123JPDP6T5G

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)

NSBC144WPDP6T5G

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

NSBC144EPDP6T5G/NSBC115TPDP6T5G

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

NSBC114EPDP6T5G/NSBC124EPDP6T5G

NSBC144EPDP6T5G/NSBC114YPDP6T5

NSBC143ZPDP6T5G/NSBC144WPDP6T5G

NSBC123JPDP6T5G

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

NSBC123TPDP6T5G/NSBC115TPDP6T5G

NSBC143EPDP6T5G

VOH

4.9

−

Vdc

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

NSBC114EPDP6T5G Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)

TCharacteristic UnitMaxTypMinSymbol

ON CHARACTERISTICS (Note 4)

Input Resistor NSBC114EPDP6T5G

NSBC124EPDP6T5G

NSBC144EPDP5T5G

NSBC114YPDP6T5G

NSBC115TPDP6T5G

NSBC123TPDP6T5G

NSBC143EPDP6T5G

NSBC143ZPDP6T5G

NSBC144WPDP6T5G

NSBC123JPDP6T5G

R1 7.0

15.4

32.9

7.0

1.54

3.3

15.4

1.54

100

2.2

4.7

2.2

28.6

61.1

130

2.86

6.1

28.6

2.86

Resistor Ratio NSBC114EPDP6T5G

NSBC124EPDP6T5G

NSBC144EPDP5T5G

NSBC114YPDP6T5G

NSBC115TPDP6T5G

NSBC123TPDP6T5G

NSBC143EPDP6T5G

NSBC143ZPDP6T5G

NSBC144WPDP6T5G

NSBC123JPDP6T5G

R1/R2 0.8

0.8

0.17

−

0.8

0.055

1.7

0.038

1.0

0.21

−

1.0

0.1

2.1

0.047

1.2

0.25

−

1.2

0.185

2.6

0.056

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

NSBC114EPDP6T5G Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDP6 NPN TRANSISTOR

0.01

0.10

1.0

0 5 10 15 20 25 30 35 40 45 50

Figure 1. VCE(sat) vs. IC

IC, COLLECTOR CURRENT (mA)

VCE(SAT), COLLECTOR−TO−EMITTER SATURATION

VOLTAGE (V)

TA=25°C

TA= 150°C

TA=−55°C

1.0

100

1000

0.1 1 10 100

VCE = 10 V

150°C

25°C

−55°C

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

0.80

1.00

1.20

1.40

1.60

1.80

2.00

2.20

2.40

0 5 10 15 20 25 30 35 40 45 50

Figure 3. Output Capacitance

VCB, COLLECTOR BASE VOLTAGE (V)

COBO, OUTPUT CAPACITANCE (pF)

0.01

0.1

100

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

150°C

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

Figure 4. Output Current vs. Input Voltage

Vin, INPUT VOLTAGE (V)

0.10

1.0

0 5 10 15 20 25 30 35 40 45 50

Figure 5. Input Voltage vs. Output Current

IC, COLLECTOR CURRENT (mA)

Vin, INPUT VOLTAGE (V)

150°C

25°C

−55°C

IC/IB = 10

NSBC114EPDP6T5G Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDP6 PNP TRANSISTOR

0.01

0.10

1.0

0 5 10 15 20 25 30 35 40 45 50

Figure 6. VCE(sat) vs. IC

IC, COLLECTOR CURRENT (mA)

VCE(SAT), COLLECTOR−TO−EMITTER SATURATION

VOLTAGE (V)

TA=25°C

TA= 150°C

TA=−55°C

IC/IB = 10

1.0

100

1000

0.1 1 10 100

VCE = 10 V

150°C

25°C

−55°C

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35 40 45 50

Figure 8. Output Capacitance

REVERSE BIAS VOLTAGE (V)

COBO, OUTPUT CAPACITANCE (pF)

0.01

0.1

1.0

100

012345

150°C

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

Figure 9. Output Current vs. Input Voltage

Vin, INPUT VOLTAGE (V)

0.1

1.0

0 5 10 15 20 25 30 35 40 45 50

Figure 10. Input Voltage vs. Output Current

IC, COLLECTOR CURRENT (mA)

Vin, INPUT VOLTAGE (V)

25°C

−55°C

150°C

NSBC114EPDP6T5G Series

http://onsemi.com

PACKAGE DIMENSIONS

SOT−963

CASE 527AD−01

ISSUE C

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM MIN NOM MAX

MILLIMETERS

A0.34 0.37 0.40

b0.10 0.15 0.20

C0.07 0.12 0.17

D0.95 1.00 1.05

E0.75 0.80 0.85

e0.35 BSC

L0.05 0.10 0.15

0.95 1.00 1.05

C0.08

12 3

456

0.004 0.006 0.008

0.003 0.005 0.007

0.037 0.039 0.041

0.03 0.032 0.034

0.014 BSC

0.002 0.004 0.006

0.037 0.039 0.041

MIN NOM MAX

INCHES

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE MATERIAL.

0.35

0.014

0.20

0.08

ǒmm

inchesǓ

SCALE 20:1

0.90

0.0354

0.35

0.014

0.20

0.08

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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NSBC114EPDP6/D

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