Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have been
characterized for Single Event Effects (SEE) with useful
performance up to an LET of 80 (MeV/(mg/cm2)). The
combination of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching and temperature stability of electrical
parameters.
Absolute Maximum Ratings Pre-Irradiation
Symbol Parameter Value Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current 6.7
A
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current 4.3
IDM @ TC = 25°C Pulsed Drain Current 26.8
PD @ TC = 25°C Maximum Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 149 mJ
IAR Avalanche Current 6.7
A
EAR Repetitive Avalanche Energy 2.5 mJ
dv/dt Peak Diode Recovery dv/dt 4.2
V/ns
TJ Operating Junction and
°C
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s)
Weight 0.98 (Typical) g
-55 to + 150
TO-39
IRHF57230SE
JANSR2N7498T2
1 2018-10-26
Product Summary
Part Number Radiation Level RDS(on) I
D QPL Part Number
IRHF57230SE 100 kRads(Si) 0.24 6.7A JANSR2N7498T2
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
PD-93857D
Description
For Footnotes, refer to the page 2.
International Rectifier HiRel Products, Inc.
R
5
TECHNOLOGY
200V, N-CHANNEL
REF: MIL-PRF-19500/706
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International Rectifier HiRel Products, Inc.
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 5.0
RJA Junction-to-Ambient (Typical Socket Mount) ––– ––– 175 °C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.24 VGS = 12V, ID2 = 4.3A
VGS(th) Gate Threshold Voltage 2.5 ––– 4.5 V VDS = VGS, ID = 1.0mA
Gfs Forward Transconductance 4.2 ––– ––– S VDS = 15V, ID2 = 4.3A
IDSS Zero Gate Voltage Drain Current ––– ––– 10 µA VDS = 160V, VGS = 0V
––– ––– 25 VDS = 160V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA VGS = 20V
Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -20V
QG Total Gate Charge ––– ––– 47
nC
ID1 = 6.7A
QGS Gate-to-Source Charge ––– ––– 12 VDS = 100V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 16 VGS = 12V
td(on) Turn-On Delay Time ––– ––– 25
ns
VDD = 100V
tr Rise Time ––– ––– 100 ID1 = 6.7A
td(off) Turn-Off Delay Time ––– ––– 35 RG = 7.5
tf Fall Time ––– ––– 40 VGS = 12V
Ls +LD Total Inductance ––– 7.0 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
Ciss Input Capacitance ––– 1014 –––
pF
VGS = 0V
Coss Output Capacitance ––– 182 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 8.8 ––– ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 6.7
ISM Pulsed Source Current (Body Diode) ––– ––– 26.8
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C,IS = 6.7A, VGS = 0V
trr Reverse Recovery Time ––– ––– 274 ns TJ = 25°C, IF = 6.7A, VDD ≤ 25V
Qrr Reverse Recovery Charge ––– ––– 2.2 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L = 6.6mH, Peak IL = 6.7A, VGS = 12V
ISD 6.7A, di/dt 219A/µs, VDD 200V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 160volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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JANSR2N7498T2
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International Rectifier HiRel Products, Inc.
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For Footnotes, refer to the page 2.
Fig a. Typical Single Event Effect, Safe Operating Area
Radiation Characteristics
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm2))
Energy
(MeV)
Range
(µm)
VDS (V)
@ VGS =
0V
@ VGS =
-5V
@ VGS =
-10V
@ VGS =
-15V
@ VGS =
-20V
Br 36.7 309 39.5 200 200 200 200 200
I 59.8 341 32.5 200 200 200 185 120
Au 82.3 350 28.4 200 200 150 50 25
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol Parameter 100 kRads (Si)
Units Test Conditions
Min. Max.
BVDSS Drain-to-Source Breakdown Voltage 200 ––– V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.5 V VDS = VGS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward ––– 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse ––– -100 nA VGS = -20V
IDSS Zero Gate Voltage Drain Current ––– 10 µA VDS = 160V, VGS = 0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) ––– 0.222 VGS = 12V, ID2 = 4.3A
RDS(on) Static Drain-to-Source
On-State Resistance (TO-39) ––– 0.24 VGS = 12V, ID2 = 4.3A
VSD Diode Forward Voltage ––– 1.5 V VGS = 0V, IS = 6.7A
0
50
100
150
200
250
0 -5 -10 -15 -20
VGS
VDS
Br
I
Au
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International Rectifier HiRel Products, Inc.
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
46810 12
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 150 C
J°
T = 25 C
J°
1 10 100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
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International Rectifier HiRel Products, Inc.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 8. Maximum Safe Operating Area
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
0.1
1
10
100
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100s
DC
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
EAS , Single Pulse Avalanche Energy (mJ)
I
D
TOP 3.0A
4.2A
BOTTOM 6.7A
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International Rectifier HiRel Products, Inc.
Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
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JANSR2N7498T2
Pre-Irradiation
International Rectifier HiRel Products, Inc.
Case Outline and Dimensions - TO-205AF (TO-39)
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
8 2018-10-26
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JANSR2N7498T2
Pre-Irradiation
International Rectifier HiRel Products, Inc.
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
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completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
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please contact your nearest Infineon Technologies office.
