DPF80C200HB
preliminary
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED²
1 2 3
Part number
DPF80C200HB
Backside: cathode
FAV
rr
tns35
RRM
40
200
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPF80C200HB
preliminary
n
s
4
A
T
VJ
=°C
reverse recovery time
A
tbd
35
tbd
n
s
I
RM
max. reverse recovery current
I
F
=A;50
25
T=125°C
VJ
-di
F
=A/µs100/dtt
rr
V
R
=V100
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.22
R0.7 K/
W
R
min.
40
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
145
P
tot
215
W
T = 25°C
C
RK/
W
40
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.45
T = 25°C
VJ
150
V
F0
V
0.67T = °C
VJ
175
r
F
5.8 m
Ω
V
0.95T = °C
VJ
I = A
F
V
40
1.20
I = A
F
80
I = A
F
80
threshold voltage
slope resistance for power loss calculation only
µ
A
150
V
RRM
V
200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
81
j
unction capacitance V = V100 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
560
A
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
200
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPF80C200HB
preliminary
Ratings
Product Mar
k
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
XXXXXXXXX
D
P
F
80
C
200
HB
Part number
Diode
HiPerFRED
ultra fast
Common Cathode
TO-247AD (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque 0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g6
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 70 A
per terminal
150-55
TO-247
Similar Part Package Voltage class
DPF60C200HJ ISOPLUS247 (3) 200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DPF80C200HB 508214Tube 30DPF80C200HBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.67
mΩ
V
0 max
R
0 max
slope resistance * 3.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPF80C200HB
preliminary
S
ØPØ P1 D2
D1
E1
4
123
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
AA2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
1 2 3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPF80C200HB
preliminary
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
