DG211/212 Low-Cost Monolithic Quad SPST CMOS Analog Switches Features Benefits Applications Wide Signal Range Simple Logic Interface Reduced Power Consumption 15-V Analog Signal Range TTL Compatibility Logic Inputs Accept Negative Voltages On-Resistance--rDS(on): 115 Disk Drives Test Equipment Communication Systems Sample-and-Holds Description The DG211 and DG212 are low cost quad single-pole single-throw analog switches for use in general purpose switching applications in communication, instrumentation and process control. These devices differ only in that the digital control logic is inverted (see Truth Table). The use of both p- and n-channel devices minimizes on-resistance variation over the analog signal range. voltage rating of 40 V, both switches will handle 15-V input signals with ease, and have a continuous current rating of 20 mA. An epitaxial layer prevents latchup. Designed with the Siliconix PLUS-40 CMOS process to combine low power dissipation with a high breakdown For new designs we recommend the silicon-gate DG211B/212B upgrades. Both devices feature true bi-directional performance (with no offset voltage) in the on condition, and will block signals to 30 V peak-to-peak in the off condition. Functional Block Diagram and Pin Configuration DG211 Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 4 13 5 12 VL 6 11 S3 10 D3 9 IN3 V- GND S4 D4 IN4 7 8 0 ON OFF 1 OFF ON Logic "0" 0.8 V Logic "1" 2.4 V V+ Ordering Information Temp Range Package 0C to 70C 16 Pin Plastic DIP 16-Pin 40C to 85C -40C 16 Pin Narrow SOIC 16-Pin Part Number DG211CJ DG212CJ DG211DY Top View DG212DY Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70039. Siliconix S-52880--Rev. E, 28-Apr-97 1 DG211/212 Absolute Maximum Ratings V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V VIN to GNDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V-, V+ VL to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V, 25 V VS or VD to V+a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0, -40 V VS or VD to V-a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0, 40 V V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V V- to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Current, Any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . 30 mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . 70 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/C above 25C d. Derate 7.6 mW/C above 75C Specifications Conditions Unless Otherwise Specified Parameter Symbol V+ = 15 V, V- = -15 V VIN = 2.4 V, 0.8 Ve Limits Tempa Minc Full -15 Typb Maxc Unit 15 V 115 175 250 W Analog Switch Analog Signal Ranged VANALOG Drain-Source On-Resistance rDS(on) Source Off Leakage Current IS(off) Drain Off Leakage Current ID(off) Drain On Leakage Current ID(on) IS = 1 mA, VD = 10 V Room Full Room Full -5 -100 0.02 5 100 Room Full -5 -100 0.02 5 100 VS = VD = 14 V Room Full -5 -200 0.15 5 200 VIN = 2.4 V Room Full -1 -10 -0.0004 VIN = 15 V Room Full VIN = 0 V Room Full VS = 14 V V, VD = 14 V nA Digital Control Input p Current Input Voltage High Input Current Input Voltage Low IINH IINL 0.003 -1 -10 1 10 mA -0.0004 Dynamic Characteristics Turn-On Time Turn Off Time Turn-Off Source-Off Capacitance Drain-Off Capacitance tON tOFF1 460 1000 Room 360 500 Room 450 450 Room 5 Room 5 VD = VS = 0 V, VIN = 0 V, f = 1 MHz Room 16 VIN N = 5 V, RL = 1 kW CL = 15 pF, VS = 1 VRMS, f = 100 kHz Room 70 Room 90 See Switching Time Test Circuit, VS = 2 V tOFF2 CS(off) CD(off) Channel On Capacitance CON Off Isolation OIRR Channel-to-Channel Crosstalk XTALK 2 Room VS = 0 V V, VIN = 5 V V, f = 1 MHz ns pF dB Siliconix S-52880--Rev. E, 28-Apr-97 DG211/212 Specifications Conditions Unless Otherwise Specified Parameter Limits V+ = 15 V, V- = -15 V VIN = 2.4 V, 0.8 Ve Symbol Tempa Minc Typb Maxc Room 0.35 0.48 Room 0.3 0.48 Room 0.5 1.2 Unit Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL VIN = 0 or 5 V mA Notes: a. Room = 25C, Full = as determined by the operating temperature suffix. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Typical Characteristics rDS(on) vs. VD and Temperature rDS(on) vs. VD and Power Supply Voltage 600 300 A. B. C. D. E. 400 200 rDS(on) ( ) rDS(on) ( ) 500 125C 25C V+ = 5 V, V- = -5 V V+ = 7.5 V, V- = -7.5 V V+ = 10 V, V- = -10 V V+ = 12 V, V- = -12 V V+ = 15 V, V- = -15 V 300 A 200 100 D 100 -55C C B E TA = 25C 0 -15 -10 -5 0 5 10 0 -15 15 -10 -5 VD - Drain Voltage (V) 0 5 10 15 VD - Drain Voltage (V) Leakage Currents vs. Temperature Leakage Current vs. Analog Voltage 10 60 V+ = 15 V V- = 15 V VL = 5 V 40 1 ID(on) I S , I D (pA) I S , I D (nA) 20 ID(off) IS(off) 0 IS(off), ID(off) -20 ID(on) -40 0.1 V+ = 15 V, V- = -15 V VL = 5 V, TA = 25C -60 -80 -100 -55 -35 -15 5 25 45 65 Temperature (C) Siliconix S-52880--Rev. E, 28-Apr-97 85 105 125 -15 -10 -5 0 5 10 15 VANALOG - Analog Voltage (V) 3 DG211/212 Typical Characteristics Switching Time vs. Positive Supply Voltage 5000 1000 V- = -15 V VL = 5 V TA = 25C 3000 tON 2000 1000 600 tOFF2 400 tOFF1 0 -55 0 5 10 15 -35 -15 5 V+ - Positive Supply (V) 25 45 65 85 105 125 Temperature (C) Switching Time vs. Negative Supply Voltage Charge Injection vs. Analog Voltage 550 70 V+ = 15 V VL = 5 V TA = 25C 500 V+ = 15 V V- = 15 V VL = 5 V TA = 25C 60 50 40 tON 450 Q (pC) t ON , t OFF (ns) tON 200 tOFF1 0 V+ = 15 V, V- = -15 V VL = 5 V, VS = 2 V RL = 1 k , CL = 35 pF TA = 25C 800 t ON , t OFF (ns) 4000 t ON , t OFF (ns) Switching Time vs. Temperature 400 30 QD 20 10 QS 0 tOFF 350 -10 -20 300 0 -5 -10 -30 -15 -15 V- - Negative Supply (V) 7 6 24 18 VT (V) C S, D (pF) 5 CD(on 12 4 3 2 CD(off) or CS(off) 6 1 0 -10 -5 0 5 10 VD or VS -- Drain or Source Voltage (V) 4 0 5 10 15 Input Switching Threshold vs. Logic Supply Voltage f = 1 MHz TA = 25C 0 -15 -5 VANALOG - Analog Voltage (V) Capacitance vs. VD or VS 30 -10 15 CCCCCCCCCCCC CCCCCCCCCCCC CCCCCCCCCCCC CCCCCCCCCCCC CCCCCCCCCCCC CCCCCCCCCCCC CCCCCCCCCCCC CCCCCCCCCCCC CCCCCCCCCCCC CCCCCCCCCCCC V+ = 15 V V- = -15 V TA = 25C 0 5 10 15 20 VL - Logic Supply (V) Siliconix S-52880--Rev. E, 28-Apr-97 DG211/212 Typical Characteristics Off Isolation vs. Frequency Channel-to-Channel Crosstalk vs. Frequency 160 160 VS = 1 VRMS See Figure 3 140 120 120 RL = 50 100 X TALK (dB) ISO (dB) VS = 1 VRMS See Figure 4 140 80 60 RL = 1 k RL = 10 k 40 RL = 50 100 80 RL = 1 k 60 RL = 10 k 40 RL = 100 k RL = 100 k 20 20 0 100 1k 10 k 100 k 1M 10 M 100 M f - Frequency (Hz) 0 100 1k 10 k 100 k 1M 10 M 100 M f - Frequency (Hz) Schematic Diagram (Typical Channel) V+ S VL V- - + V+ GND INX D V- Figure 1. Siliconix S-52880--Rev. E, 28-Apr-97 5 DG211/212 Test Circuits VO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the output waveform. Logic Input tr <20 ns tf <20 ns 50% 0V VL V+ S D IN VS 90% Switch Output +15 V 3V 2V Switch Input +5 V GND 10% VO V- RL 1 k tOFF1 tON -15 V tOFF2 CL (includes fixture and stray capacitance) RL VO = VS RL + rDS(on) Figure 2. Switching Time +5 V +15 V C C VL VS V+ S VO D Rg = 50 RL 1 k IN 0V, 5 V GND V- C C = RF bypass -15 V Figure 3. Off Isolation vs. Frequency C +5 V VL S1 VS Rg = 50 +15 V C V+ D1 50 IN1 0V, 5 V S2 NC GND XTALK Isolation = 20 log RL IN2 0V, 5 V C = RF bypass VO D2 VS VO V- C -15 V Figure 4. Crosstalk vs. Frequency 6 Siliconix S-52880--Rev. E, 28-Apr-97 DG211/212 Applications Hintsa Some applications of the DG211 or DG212 will find the logic control inputs INX driven from the output of comparators or op-amps with nearly plus to minus 15-V transitions. In these applications the user can shift the input logic transition voltage from the normal 1.6 V of TTL to zero volts by connecting the VL pin to the GND pin. In this mode of operation the input offset voltage between INX and VL (= GND) measures less than 500 mV. V+ Positive Supply Voltage (V) V- Negative Supply Voltage (V) VL Logic Supply Voltage (V) VIN Logic Input Voltage VINH(min)/VINL(max) (V) VS or VD Analog Voltage Range (V) 20 -20 5 2.4/0.8 -20 to 20 15 -15 5 2.4/0.8 -15 to 15 12 -12 5 2.4/0.8 -12 to 12 10 -10 5 2.4/0.8 -10 to 10 8b -8 5 2.4/0.8 -8 to 8 10 -10 10 5/2 -10 to 10 Notes: a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. b. Operation below 8 V is not recommended. Applications Precision Attenuator +5 V +15 V +5 V VIN VIN(max) = 150 V VCC D3 D2 D1 D0 Data Bus VL V+ Q0 9 M Q1 900 k 74175 QUAD Q2 D FF 90 k Q3 Processor System Bus R 9 k CLK INPUT +5 V 1 k DG211 or DG212 WR 7432 GND V- CS Address Bus Address Decoder -15 V + - TL081 VOUT Figure 5. Microprocessor Controlled Analog Signal Attenuator Siliconix S-52880--Rev. E, 28-Apr-97 7 DG211/212 Applications (Cont'd) +15 V -15 V VIN + - VOUT +15 V V+ +5 V VL GAIN1 AV = 1 R1 90 kW GAIN2 AV = 10 R2 5 kW GAIN3 AV = 20 R3 4 kW Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. VOUT VIN = R1 + R2 + R3 + R4 = 100 R4 (with SW4 closed) SW4 GAIN4 AV = 100 R4 1 kW DG211 or DG212 V- GND -15 V Figure 6. Precision-Weighted Resistor Programmable-Gain Amplifier +15 V +5 V VL V+ Logic Input Low = Sample High = Hold 1 kW +15 V +15 V -15 V J202 LM101A VIN 5 MW 50 pF 5.1 MW 200 W 2N4400 1000 pF V- DG211 GND 30 pF VOUT J500 J507 -15 V -15 V Aquisition Time Aperature Time Sample to Hold Offset Droop Rate = 25 ms = 1 ms = 5 mV = 5 mV/s Figure 7. DG211 Sample-and-Hold 8 Siliconix S-52880--Rev. E, 28-Apr-97 DG211/212 Applications (Cont'd) +15 V +5 V V1 VL DG212 S1 +5 V IN1 1/ 2 74C04 74C04 C D1 MM74C73 J S2 Q CLK IN2 K CLR R D2 74C04 S3 R 1/ 2 MM74C73 J IN3 Q CLK D3 K CLR S4 IN4 D4 V- GND To Scope -15 V +15 V IN1 Channel 1 Amplifier (Identical to 2, 3, 4) (See Below) A1 To S1 +15 V -15 V +15 V 100 k LM741 1 M Position 100 k -15 V R (See Below) -15 V A1 is op amp with suitable bandwidth, slew rate, etc., for desired signals. R is added for extra gain according to formula: Voltage Gain = 1 + 100 k R Figure 8. The "Scope Extender" Which Displays 4-Channels Simultaneously on a Single Trace Scope Siliconix S-52880--Rev. E, 28-Apr-97 9