IN1IN2
D1D2
S1S2
V– V+
GND VL
S4S3
D4D3
IN4IN3
Dual-In-Line and SOIC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG211
DG211/212
Siliconix
S-52880—Rev. E, 28-Apr-97 1
Low-Cost Monolithic Quad SPST CMOS Analog Switches
Features Benefits Applications
15-V Analog Signal Range
TTL Compatibility
Logic Inputs Accept Negative Voltages
On-Resistance—rDS(on): 115
Wide Signal Range
Simple Logic Interface
Reduced Power Consumption
Disk Drives
Test Equipment
Communication Systems
Sample-and-Holds
Description
The DG211 and DG212 are low cost quad single-pole
single-throw analog switches for use in general purpose
switching applications in communication, instrumentation
and process control. These devices differ only in that the
digital control logic is inverted (see Truth Table). The use
of both p- and n-channel devices minimizes on-resistance
variation over the analog signal range.
Designed with the Siliconix PLUS-40 CMOS process to
combine low power dissipation with a high breakdown
voltage rating of 40 V, both switches will handle 15-V
input signals with ease, and have a continuous current
rating of 20 mA. An epitaxial layer prevents latchup.
Both devices feature true bi-directional performance
(with no offset voltage) in the on condition, and will block
signals to 30 V peak-to-peak in the off condition.
For new designs we recommend the silicon-gate
DG211B/212B upgrades.
Functional Block Diagram and Pin Configuration
0 ON OFF
1 OFF ON
Logic “0” 0.8 V
Logic “1” 2.4 V
Ordering Information
Temp Range Package Part Number
0
Cto70
C
16 Pin Plastic DIP
DG211CJ
0C
to
70C
16
-
Pin
Plastic
DIP
DG212CJ
40
Cto85
C
16 Pin Narrow SOIC
DG211DY
–
40C
to
85C
16
-
Pin
Narrow
SOIC
DG212DY
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70039.
DG211/212
2 Siliconix
S-52880—Rev. E, 28-Apr-97
Absolute Maximum Ratings
V+ to V– 44 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VIN to GNDaV–, V+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to GND –0.3 V, 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VS or VD to V+a0, –40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VS or VD to V–a0, 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V+ to GND 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V– to GND –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current, Any Terminal Except S or D 30 mA. . . . . . . . . . . . . . . . . . . .
Continuous Current, S or D 20 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) 70 mA. . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 125C. . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIPc470 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOICd600 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped
by internal diodes. Limit forward diode current to maximum
current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/C above 25C
d. Derate 7.6 mW/C above 75C
Specifications
Conditions Unless Otherwise Specified Limits
Parameter Symbol V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 VeTempaMincTypbMaxcUnit
Analog Switch
Analog Signal RangedVANALOG Full –15 15 V
Drain-Source On-Resistance rDS(on) IS = 1 mA, VD = 10 V Room
Full 115 175
250 W
Source Off Leakage Current IS(off)
VS=14 V VD=14 V
Room
Full –5
–100 0.02 5
100
Drain Off Leakage Current ID(off)
V
S =
14
V
,
V
D =
14
V
Room
Full –5
–100 0.02 5
100 nA
Drain On Leakage Current ID(on) VS = VD = 14 V Room
Full –5
–200 0.15 5
200
Digital Control
Input Current
IINH
VIN = 2.4 V Room
Full –1
–10 –0.0004
p
Input Voltage High
I
INH VIN = 15 V Room
Full 0.003 1
10 mA
Input Current
Input Voltage Low IINL VIN = 0 V Room
Full –1
–10 –0.0004
Dynamic Characteristics
Turn-On Time tON Room 460 1000
Turn Off Time
tOFF1 See Switching Time Test Circuit, VS = 2 V Room 360 500 ns
Turn
-
Off
Time
tOFF2 Room 450 450
Source-Off Capacitance CS(off)
VS=0VV
IN =5Vf=1MHz
Room 5
Drain-Off Capacitance CD(off)
V
S =
0
V
,
V
IN =
5
V
,
f
=
1
MHz
Room 5 pF
Channel On Capacitance CON VD = VS = 0 V, VIN = 0 V, f = 1 MHz Room 16
Off Isolation OIRR VIN = 5 V, RL = 1 kWRoom 70
dB
Channel-to-Channel Crosstalk XTALK
N
CL = 15 pF, VS = 1 VRMS, f = 100 kHz Room 90
dB
DG211/212
Siliconix
S-52880—Rev. E, 28-Apr-97 3
Specifications
Conditions Unless Otherwise Specified Limits
Parameter Symbol V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 VeTempaMincTypbMaxcUnit
Power Supplies
Positive Supply Current I+ Room 0.35 0.48
Negative Supply Current I– VIN = 0 or 5 V Room 0.3 0.48 mA
Logic Supply Current ILRoom 0.5 1.2
Notes:
a. Room = 25C, Full = as determined by the operating temperature suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
Typical Characteristics
rDS(on) vs. VD and Power Supply VoltagerDS(on) vs. VD and Temperature
Leakage Current vs. Analog VoltageLeakage Currents vs. Temperature
rDS(on) ()
(pA)I , I
SD
(nA)I, I
SD
Temperature (C)
VD – Drain Voltage (V)
VANALOG – Analog Voltage (V)
rDS(on) ()
VD – Drain Voltage (V)
300
200
100
0–15 –10 –5 0 5 10 15
600
500
400
300
200
100
0–15 –10 –5 0 5 10 15
A
B
C
D
E
A. V+ = 5 V, V– = –5 V
B. V+ = 7.5 V, V– = –7.5 V
C. V+ = 10 V, V– = –10 V
D. V+ = 12 V, V– = –12 V
E. V+ = 15 V, V– = –15 V
10
1
0.1
–55 –35 –15 5 25 45 65 85 105 125
TA = 25C
–55C
25C
125C
ID(on) ID(off)
IS(off)
60
40
20
0
–20
–40
–60
–80
–100 –15 –10 –5 0 5 10 15
IS(off), ID(off)
ID(on)
V+ = 15 V, V– = –15 V
VL = 5 V, TA = 25C
V+ = 15 V
V– = 15 V
VL = 5 V
DG211/212
4 Siliconix
S-52880—Rev. E, 28-Apr-97
Typical Characteristics
(ns)tON,t
OFF
(ns)tON,t
OFF
Switching Time vs. TemperatureSwitching Time vs. Positive Supply Voltage
Temperature (C)V+ – Positive Supply (V)
1000
800
600
400
200
0
–55 –35 –15 5 25 45 65 85 105 125
tOFF1
tOFF2
tON
V+ = 15 V, V– = –15 V
VL = 5 V, VS = 2 V
RL = 1 k , CL = 35 pF
TA = 25C
5000
4000
3000
2000
1000
00 5 10 15
tON
tOFF1
V– = –15 V
VL = 5 V
TA = 25C
(pF)CS, D
(V)
T
V
(ns)tON,t
OFF
Charge Injection vs. Analog VoltageSwitching Time vs. Negative Supply Voltage
Input Switching Threshold vs. Logic Supply VoltageCapacitance vs. VD or VS
Q (pC)
VANALOG – Analog Voltage (V)V– – Negative Supply (V)
VL – Logic Supply (V)VD or VS — Drain or Source Voltage (V)
–15
70
60
50
40
30
20
10
0
–20
–30 –10 –5 0 5 10 15
QD
QS
–10
550
500
450
400
350
300 0 –5 –10 –15
tON
tOFF
V+ = 15 V
VL = 5 V
TA = 25C
ÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇ
7
6
5
4
3
2
1
00 5 10 15 20
30
24
18
12
6
0–10 –5 0 5 10 15–15
CD(on
CD(off) or CS(off)
V+ = 15 V
V– = –15 V
TA = 25C
f = 1 MHz
TA = 25C
V+ = 15 V
V– = 15 V
VL = 5 V
TA = 25C
DG211/212
Siliconix
S-52880—Rev. E, 28-Apr-97 5
Typical Characteristics
160
140
120
100
80
60
40
20
0100 1 k 10 k 100 k 1 M 10 M 100 M
RL = 50
RL = 1 k
RL = 10 k
RL = 100 k
X
ISO (dB)
160
140
120
100
80
60
40
20
0100 1 k 10 k 100 k 1 M 10 M 100 M
VS = 1 VRMS
See Figure 3
RL = 1 k
RL = 10 k
RL = 100 k
RL = 50
Channel-to-Channel Crosstalk vs. FrequencyOff Isolation vs. Frequency
f – Frequency (Hz) f – Frequency (Hz)
VS = 1 VRMS
See Figure 4
TALK (dB)
Schematic Diagram (Typical Channel)
Figure 1.
V+
INX
V–
GND
–
+
S
D
V–
V+
VL
DG211/212
6 Siliconix
S-52880—Rev. E, 28-Apr-97
Test Circuits
Figure 2. Switching Time
VO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the
output waveform.
IN
V+
S
CL (includes fixture and stray capacitance)
V–
–15 V
D
GND
2 V
VL
+15 V+5 V
RL
RL + rDS(on)
VO = VS
50%
0 V
3 V
tOFF1
tON
VO
VS
tr <20 ns
tf <20 ns
Logic
Input
Switch
Input
Switch
Output
90% RL
1 k
10%
tOFF2
Figure 3. Off Isolation vs. Frequency
Figure 4. Crosstalk vs. Frequency
V+
VS
IN
VLVO
S
–15 V
GND V– C
RL
1 k
D
0V, 5 V
Rg = 50
+5 V
C
+15 V
C
–15 V
GND V–
NC
C
S1
D2
IN1
RL
IN2
D1
Rg = 50
S2
VS
VO
0V, 5 V
0V, 5 V
50
VLV+
+15 V
C+5 V C
XTALK Isolation = 20 log VS
VO
C = RF bypass
C = RF bypass
DG211/212
Siliconix
S-52880—Rev. E, 28-Apr-97 7
Applications Hintsa
Some applications of the DG211 or DG212 will find the
logic control inputs INX driven from the output of
comparators or op-amps with nearly plus to minus 15-V
transitions. In these applications the user can shift the
input logic transition voltage from the normal 1.6 V of
TTL to zero volts by connecting the VL pin to the GND
pin. In this mode of operation the input offset voltage
between INX and VL (= GND) measures less than
500 mV.
V+
Positive Supply
Voltage
(V)
V–
Negative Supply
Voltage
(V)
VL
Logic Supply
Voltage
(V)
VIN
Logic Input Voltage
VINH(min)/VINL(max)
(V)
VS or VD
Analog Voltage
Range
(V)
20
15
12
10
8b
10
–20
–15
–12
–10
–8
–10
5
5
5
5
5
10
2.4/0.8
2.4/0.8
2.4/0.8
2.4/0.8
2.4/0.8
5/2
–20 to 20
–15 to 15
–12 to 12
–10 to 10
–8 to 8
–10 to 10
Notes:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
b. Operation below 8 V is not recommended.
Applications
Precision Attenuator
+5 V +5 V +15 V
Data Bus
Address
Bus
Processor
System Bus
INPUT +5 V
Address
Decoder
CLK
74175
QUAD
D
FF
–15 V
V+
GND V–
TL081
+
–
VCC
R
WR
CS
Q0
Q1
Q2
Q3
D1
D0
D3
D2
VL
VIN
VIN(max) = 150 V
9 M
900 k
90 k
9 k
1 k
VOUT
Figure 5. Microprocessor Controlled Analog Signal Attenuator
DG211 or DG212
7432
DG211/212
8 Siliconix
S-52880—Rev. E, 28-Apr-97
Applications (Cont’d)
V+
Aquisition Time = 25 ms
Aperature Time = 1 ms
Sample to Hold Offset = 5 mV
Droop Rate = 5 mV/s
+15 V–15 V
+15 V +5 V
–15 V
V+
V– GND
DG211 or DG212
+
–
VIN
GAIN1
AV = 1
GAIN2
AV = 10
GAIN3
AV = 20
GAIN4
AV = 100
R1
90 kW
R2
5 kW
R4
1 kW
R3
4 kW
VOUT
Gain error is determined only by the
resistor tolerance. Op amp offset and
CMRR will limit accuracy of circuit.
VOUT
VIN
R1 + R2 + R3 + R4
(with SW4 closed)
=R4
VL
SW4
Figure 6. Precision-Weighted Resistor Programmable-Gain Amplifier
LM101A
+15 V
–15 V
30 pF
+15 V
–15 V
V– DG211
50 pF 1000 pF
J202
J500
J507
+15 V
2N4400
–15 V
VIN VOUT
1 kW
200 W
5 MW
5.1 MW
Logic Input
Low = Sample
High = Hold
Figure 7. DG211 Sample-and-Hold
= 100
+5 V
VL
GND
DG211/212
Siliconix
S-52880—Rev. E, 28-Apr-97 9
Applications (Cont’d)
A1 is op amp with suitable bandwidth, slew rate, etc., for desired signals.
R is added for extra gain according to formula: Voltage Gain = 1 +
S4
D4
S3
D3
S2
D2
S1
D1
+15 V +5 V
–15 V
GND
DG212
RC
R
74C04
+5 V
JQ
KCLR
CLK
JQ
KCLR
CLK
To
Scope
+15 V
–15 V
+15 V
+15 V
–15 V
–15 V
R
(See Below)
(See Below)
LM741
V1VL
S1
To
IN1
100 k
100 k
100 k
R
1 M
Position
74C04
1/2 MM74C73
1/2 MM74C73
A1
74C04
IN4
IN3
IN2
IN1
Figure 8. The “Scope Extender” Which Displays 4-Channels Simultaneously on a Single Trace Scope
V–
Channel 1 Amplifier
(Identical to 2, 3, 4)
