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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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November 2013
FQB9P25
P-Channel QFET® MOSFET
-250 V, -9.4 A, 620 mΩ
Description
FQB9P25 — P-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQB9P25 Rev. C0
www.fairchildsemi.com
1
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology. This advanced
technology is especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand a high energy pulse in the avalanche and
commutation modes. These devices are well suited for
high efficiency switching DC/DC converters.
Features
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQB9P25TM Unit
RJC Thermal Resistance, Junction to Case, Max. 1.04
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 40
•-9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V,
ID = -4.7 A
•Low Gate Charge (Typ. 29 nC)
•Low Crss (Typ. 27 pF)
•100% Avalanche Tested
Symbol Parameter FQB9P25TM Unit
VDSS Drain-Source Volt age -250 V
IDDrain Current -9.4 A
- Continuous (TC = 25°C)
- Continuous (TC = 100°C) -5.9 A
IDM Drain Current - Pulsed (Note 1) -37.6 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ
IAR Avalanche Current (Note 1) -9.4 A
EAR Repetitive Avalanche Energy (Note 1) 12 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PDPower Dissipation (TA = 25°C) * 3.13 W
Power Dissipation (TC = 25°C) 120 W
- Derate above 25°C 0.96 W/°C
TJ, TSTG Operating and Storage Temperat ure Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,
1/8” from case for 5 seconds 300 °C
GS
D
D2-PAK
G
S
D
Package Marking and Ordering Information
Part Number Top Mark Package Reel Size Tape Width Quantity
FQB9P25FQB9P25TM D2-PAK 330 mm 24 mm 800 units
FQB9P25 — P-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQB9P25 Rev. C0
www.fairchildsemi.com
2
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 11.8 mH, IAS = -9.4 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ -9.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
Packing Method
Tape and Reel
Electrical Characteristics TC = 25oC unless otherwise noted.
(Note 4)
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-250 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = -250 µA, Referenced to 25°C -- -0.2 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = -250 V, VGS = 0 V -- -- -1 µA
VDS = -200 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-3.0 -- -5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = -10 V, ID = -4.7 A -- 0.48 0.62 Ω
gFS Forward Transconductance VDS = -40 V, ID = -4.7 A -- 5.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 910 1180 pF
Coss Output Capacitance -- 170 220 pF
Crss Reverse Transfer Capacit ance -- 27 35 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -125 V, ID = -9.4 A,
RG = 25 Ω
-- 20 50 ns
trTurn-On Rise Time -- 150 310 ns
td(off) Turn-Off Dela y Time -- 4 5 100 ns
tfTurn-Off Fall Time -- 65 140 ns
QgTotal Gate Charge VDS = -200 V, ID = -9.4 A,
VGS = -10 V
-- 29 38 nC
Qgs Gate-Source Charge -- 7.6 -- nC
Qgd Gate-Drain Charge -- 14 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = -9.4 A -- -- -5.0 V
trr Reverse Recovery Time VGS = 0 V, I S = -9.4 A,
dIF / dt = 100 A/µs-- 190 -- ns
Qrr Reverse Recovery Charge -- 1.45 -- µC
(Note 4)
FQB9P25 — P-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQB9P25 Rev. C0
www.fairchildsemi.com
3
!
0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
VDS = -125V
VDS = -50V
VDS = -200V
※ Note : ID = -9.4 A
-VGS , G ate-Source Voltage [V]
QG, To tal Ga t e Charge [nC]
10-1 100101
0
400
800
1200
1600
2000
2400 Ciss = Cgs + Cgd (C ds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ No tes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
-VDS, Drain-Source Voltage [V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
10-1
100
101
150℃※ Notes :
1. VGS = 0V
2. 250μ
s Pulse Test
25℃
-IDR , R ev e rs e D ra in Curren t [A ]
-VSD , Source-Drain Voltage [V]
0 01 0320 40
0.0
0.5
1.0
1.5
2.0
※ N o te : TJ = 25℃
VGS = - 20V
VGS = - 10V
RDS(on) [Ω],
Drain-Source On-Resistance
-ID , Drain Cu rrent [A]
2 864 10
10-1
100
101
150℃
25℃
-55℃
※ Notes :
1. VDS = -50V
2. 250μ
s Pulse Test
-ID , Drain Current [A]
-VGS , Gate-Source Voltage [V]
10-1 100101
10-1
100
101
VGS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bo ttom : -5.5 V
※ Notes :
1. 250μ
s Pulse Test
2. TC = 25℃
-ID, Drain Current [A]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance C haracteristi cs Figure 6. Gate Charge Characteristics
Figure 3. On-Resist anc e Variation vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character ist ic s
ZθJC(t), Thermal Response [oC/W]
FQB9P25 — P-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQB9P25 Rev. C0
www.fairchildsemi.com
4
!
10-5 10-4 100101
10-2
10-1
100
※ No te s :
1 . ZθJC(t) = 1.004 ℃/W M a x .
2 . D u ty F a c t o r, D = t 1/t2
= P 3 . TJM - T C DM * Z θJC(t)
single pu lse
D=0.5
0.02
0.2
0.05
0.1
0.01
10-3 10-2 10-1
t1, Sq u a re W a ve P u lse Du ra tio n [s ec ]
25 50 75 100 125 150
0
2
4
6
8
10
-ID, D rain C urrent [A ]
TC, Case Temperature [℃
]
100101102
10-1
100
101
102
DC
10 m s
1 m s
100 µs
Operation in This Area
is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
-ID, Drain Current [A]
-VDS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. VGS = -10 V
2. ID = -4.7 A
RDS(ON) , (Norm alized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1 . VGS = 0 V
2 . ID = -250 μ
A
-BV DSS , (N orm alize d )
Drain-Sou rce Breakdow n V oltage
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Br ea kdown Voltage Variation
vs. Temperature Figure 8. On-Resistanc e Va riation
vs. Temperature
Figure 11. Tr ans i ent Ther m al Res pons e Cur ve
t1
PDM
t2
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQB9P25 Rev. C0
www.fairchildsemi.com
5
FQB9P25 — P-Channel QFET® MOSFET
VVDSDS
VVGSGS 1010%%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ofof ff)) ttff
VVDDDD
VVDSDS
RRLL
DUTDUT
RRGG
VVGSGS
ChChargargee
VVGSGS
QQgg
QQgsgs QQgdgd
VVGSGS
DUDUTT
VVDSDS
300300nFnF
50K50KΩΩ
200n200nFF
12V12V
SamSamee T Tyypepe
as DUas DUTT
E
EEAS AS AS ===
---
-2
1
2
1
2
1
2
1
---------
--- LLL
ASASAS
III
BVBVDSDSSS
222 ---
-------
--------
--------
---------
-----
BV
BVDSDSSS -V-V
DDDD
VVDDDD
VVDSDS
BVBVDSSDSS
t t pp
VVDDDD
IIASAS
VVDS DS (t)(t)
IID D (t(t))
TiTimmee
DUDUTT
RRGG
LLL
III DDD
t t pp
IG = const.
VVGSGS
VVGSGS
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQB9P25 — P-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQB9P25 Rev. C0
www.fairchildsemi.com
6
••
DUTDUT
VVDSDS
++
__
DrivDriverer
RRGG ComCompplliimmentent of of DUTDUT
(N-(N-CChannelhannel))
VVGSGS •• ddvv//dtdt ccoontntrroolllleed bd byy R RGG
II
SDSD ccononttrrolollleded by by pu pullsse pee perriiodod
VVDDDD
LLL
II SDSD
1010VV
VVGSGS
( Driv( Driver )er )
II SDSD
( DUT )( DUT )
VVDSDS
( DUT )( DUT )
VVDDDD
BoBodydy D Diiooddee
ForForwward Vard Vololttagage Dre Dropop
IIFMFM ,, Bo Bodydy D Diiodode Fe Fororwwaarrd Cd Cuurrrrenentt
VVSDSD
BoBodydy D Diiodode Re Reevveerrssee C Cuurrrrenentt
IIRMRM
BoBodydy Di Diodode e RReecovcoveerryy dvdv/d/dtt
didi//dtdt
D =D =
D = ----
--
GateGate
Gate
------------------
---------
P P
Pulul
ulss
s
----------------
--------
e e
e WW
Wii
idd
d
----------
-----
tt
thh
h
GaGa
Gate Pute Pu
te Pull
lss
see
e
PePe
Perr
rii
iodod
od
--
---
-
©2000 Fairchild Semiconductor Corporation
FQB9P25 Rev. C0
www.fairchildsemi.com
7
FQB9P25 — P-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
©2000 Fairchild Semiconductor Corporation
FQB9P25 Rev. C0
www.fairchildsemi.com
8
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Definition of Terms
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Rev. I66
tm
®
FQB9P25 — P-Channel QFET® MOSFET
www.onsemi.com
1
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