SM6T SERIES
TRANSZORB™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts
FEATURES
♦For surface mounted applications in order
to optimize board space
♦Low profile package
♦Built-in strain relief
♦Glass passivated junction
♦Low inductance
♦Excellent clamping capability
♦Repetition Rate (duty cycle): 0.01%
♦Fast reponse time: typically less than 1ps from 0 volts to
VBR min.
♦Typical IDless than 1µ A above 10V
♦High temperature soldering: 250°C/10 seconds
at terminals
♦Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types: Color band
denotes positive end (cathode)
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOLS VALUE UNIT
Peak Pulse Power Dissipation on 10/1000µs
waveform (NOTES 1, 2, Fig. 1) PPPM Minimum 600 Watts
Peak Pulse Current on 10/1000µs
waveform (NOTE 1, Fig. 3) IPPM See Table 1 Amps
Power Dissipation on Infinite Heatsink, TA=50°CP
M(AV) 5.0 Watts
Peak Forward Surge Current, 10ms Single Half Sine-wave, IFSM 100 Amps
Undirectional Only
Max. Junction Temperature TJ150 °C
Storage Temperature Range TSTG -65 to +175 °C
Thermal Resistance Junction to Ambient Air (NOTE 2) RΘJA 100 °C/W
Thermal Resistance Junction to Leads RΘJL 20 °C/W
NOTES
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
(2) Mounted on 5.0mm2(.013mm thick) land areas.
(3) Measured on 8.3ms single half sine-wave or equivalent squarewave, duty cycle 4 pulses per minute maximum.
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52) 0.008 (0.203)
0.205 (5.21)
0.220 (5.59)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
0.130 (3.30)
0.155 (3.94)
MAX.
DO-214AA
Dimensions in inches and (millimeters)
NEW PRODUCT NEW PRODUCT NEW PRODUCT
1/21/99
ELECTRICAL CHARACTERISTICS RATINGS at (TA=25ºC unless otherwise noted)
SM6T6V8A KE7 KE7 5.80 1000 6.45 7.14 10 10.5 57.0 13.4 298 5.7
SM6T7V5A KK7 AK7 6.40 500 7.13 7.88 10 11.3 53.0 14.5 276 6.1
SM6T10A KT7 AT7 8.55 10.0 9.50 10.5 1.0 14.5 41.0 18.6 215 7.3
SM6T12A KX7 AX7 10.2 5.00 11.4 12.6 1.0 16.7 36.0 21.7 184 7.8
SM6T15A LG7 LG7 12.8 1.00 14.3 15.8 1.0 21.2 28.0 27.2 147 8.4
SM6T18A LM7 BM7 15.3 1.00 17.1 18.9 1.0 25.2 24 32.5 123 8.8
SM6T22A LT7 BT7 18.8 1.00 20.9 23.1 1.0 30.6 20.0 39.3 102 9.2
SM6T24A LV7 LV7 20.5 1.00 22.8 25.2 1.0 33.2 18.0 42.8 93 9.4
SM6T27A LX7 BX7 23.1 1.00 25.7 28.4 1.0 37.5 16.0 48.3 83 9.6
SM6T30A ME7 CE7 25.6 1.00 28.5 31.5 1.0 41.5 14.5 53.5 75 9.7
SM6T33A MG7 MG7 28.2 1.00 31.4 34.7 1.0 45.7 13.1 59.0 68 9.8
SM6T36A MK7 CK7 30.8 1.00 34.2 37.8 1.0 49.9 12.0 64.3 62 9.9
SM6T39A MM7 CM7 33.3 1.00 37.1 41.0 1.0 53.9 11.1 69.7 57 10.0
SM6T68A NG7 NG7 58.1 1.00 64.6 71.4 1.0 92.0 6.50 121 33 10.4
SM6T100A NV7 NV7 85.5 1.00 95.0 105 1.0 137 4.40 178 22.5 10.6
SM6T150A PK7 PK7 128 1.00 143 158 1.0 207 2.90 265 15 10.8
SM6T200A PR7 PR7 171 1.00 190 210 1.0 274 2.20 353 11.3 10.8
SM6T220A PR8 PR8 188 1.00 209 231 1.0 328 2.00 388 10.3 10.8
NOTES:
(1) For bi-directional devices add “C” for ±10% and “CA” for ±5% tolerance of VBR
(2) VBR measured after ITapplied for 300µs square wave pulse
(3) For bipolar devices with VR=10 Volts or under, the ITlimit is doubled
APPLICATION NOTES
A 600W (SMB) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to pro-
tect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current
within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit.
RECOMMENDED PAD SIZES
The pad dimensions should be 0.010” (0.25mm) longer than the contact size, in the lead axis. This allows a solder fillet to form, see figure below. Contact factory for
soldering methods.
0.90 (2.28)
0.025 (2.16)
0.070 (1.78)
Type(1)
Device Marking Code
Uni Bi
Standoff
Voltage
VRM
(Volts)
Leakage
Current(3)
IRM @ VRM
(µA)
Breakdown Voltage
VBR @ IT(2)
(Volts)
Min Max
Test
Current
IT
(mA)
Clamping Voltage
VC@ IPP
10/1000µs
(Volts) (Amps)
αT
Max
10-4/°C
Clamping Voltage
VC@ IPP
8/20µs
(Volts) (Amps)
RATINGS AND CHARACTERISTICS CURVES SM6T SERIES
01.0 2.0 3.0 4.0
0
100
150
50
1.0µs10µs100µs1.0ms 10ms
0.1
1.0
10
100
0.1µs0 25 50 75 100 125 150 175 200
0
25
50
100
75
110 100 200
10
100
1,000
6,000
110 100
10
100
200
110 100 200
10
100
1,000
6,000
FIG. 1 - PEAK PULSE POWER RATING CURVE
PPPM, PEAK PULSE POWER, kW
td, PULSE WIDTH, sec. TA, AMBIENT TEMPERA TURE, °C
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
UNIDIRECTIONAL
FIG. 3 - PULSE WAVEFORM
t, TIME, ms
VWM, REVERSE STAND-OFF VOLTAGE, VOLTS
VWM, REVERSE STAND-OFF VOLTAGE,
VOLTS
NUMBER OF CYCLES AT 60 HZ
IPPM, PEAK PULSE CURRENT, %
PEAK PULSE POWER (PPP) or CURRENT (IPP)
DERATING IN PERCENTAGE, %
CJ, JUNCTION CAPACITANCE, pF
CJ, JUNCTION CAPACITANCE, pF
IFSM, PEAK FORWARD SURGE CURRENT,
AMPERES
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG. 3
TA=25°C
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% of IPPM
tr=10µsec.
MEASURED at
ZERO BIAS
MEASURED at
STAND-OFF
VOLTAGE, VWM
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
UNIDIRECTIONAL ONLY
td
HALF VALUE - IPP
2
10/1000µsec. WAVEFORM
as DEFINED by R.E.A.
FIG. 6 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK VALUE
IPPM
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
BIDIRECTIONAL
FIG. 2 - PULSE DERATING CURVE
TJ=25° C
f=1.0 MHZ
Vsig=50mVp-p
TJ=25° C
f=1.0 MHZ
Vsig=50mVp-p
0.2 x 0.2” (0.5 x 0.5mm)
COPPER PAD AREAS
MEASURED at
ZERO BIAS
MEASURED at
STAND-OFF
VOLTAGE, VWM
