Freescale Semiconductor Technical Data Document Number: A2T26H160--24S Rev. 0, 8/2014 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. A2T26H160--24SR3 2600 MHz Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc, Pout = 28 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 2496 MHz 15.7 48.2 7.9 -31.5 2590 MHz 16.3 47.9 7.9 -34.0 2690 MHz 16.4 48.1 7.5 -34.0 2496-2690 MHz, 28 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR Features Advanced High Performance In--Package Doherty Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel. NI--780S--4L2L 6 VBWA(1) Carrier RFinA/VGSA 1 5 RFoutA/VDSA RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with the VDD current supplied through pin 3 and pin 6. Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2T26H160--24SR3 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS -0.5, +65 Vdc Gate--Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature Range TC -40 to +150 C TJ -40 to +225 C Operating Junction Temperature Range (1,2) Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 76C, 28 W W--CDMA, 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc, 2590 MHz RJC 0.56 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 60 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 350 mAdc, Measured in Functional Test) VGS(Q) 1.4 1.8 2.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.6 Adc) VDS(on) 0.1 0.15 0.3 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 0.8 1.2 1.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) 0.1 0.15 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics - Side A (4) (Carrier) On Characteristics - Side B (4) (Peaking) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Each side of device measured separately. (continued) A2T26H160--24SR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.4 Vdc, Pout = 28 W Avg., f = 2575 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 14.5 15.5 17.5 dB Drain Efficiency D 43.0 47.0 -- % PAR 7.0 7.7 -- dB ACPR -- -31.0 -28.5 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Load Mismatch (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) IDQA = 350 mA, VGSB = 0.6 Vdc, f = 2590 MHz No Device Degradation VSWR 10:1 at 32 Vdc, 178 W Pulse Output Power (3 dB Input Overdrive from 138 W Pulse Rated Power) Typical Performance (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc, 2496-2690 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB -- 138 -- W Pout @ 3 dB Compression Point (3) P3dB -- 178 -- W -- -18 -- VBWres -- 140 -- MHz Gain Flatness in 194 MHz Bandwidth @ Pout = 28 W Avg. GF -- 0.7 -- dB Gain Variation over Temperature (-30C to +85C) G -- 0.009 -- dB/C P1dB -- 0.009 -- dB/C AM/PM (Maximum value measured at the P3dB compression point across the 2496-2690 MHz frequency range) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (-30C to +85C) 1. Part internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. A2T26H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 3 VDDA C20 VGGA -A2T26H160--24S Rev. 9 R4 C19 C1 C14 C17 C11 C13 R1 C5 C3 Z1 C4 R2 C7 C C8 P C9 C6 C10 D60817 CUT OUT AREA R3 C16 C15 C2 R5 C12 C18 -- VGGB C21 VDDB Figure 2. A2T26H160--24SR3 Production Test Circuit Component Layout Table 5. A2T26H160--24SR3 Production Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C6, C8 9.1 pF Chip Capacitors ATC600F9R1BT250XT ATC C7 6.8 pF Chip Capacitor ATC600F6R8BT250XT ATC C9 0.2 pF Chip Capacitor ATC600F0R2BT250XT ATC C10, C11, C12, C13 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK C14, C15, C16, C17, C18, C19 10 F Chip Capacitors C5750X7S2A106K230KE TDK C20, C21 220 F, 63 V Electrolytic Capacitors SK063M0220B5S--1012 Yageo R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay R3 50 , 4 W Chip Resistor CW12010T0050GBK ATC R4, R5 1 K, 1/4 W Chip Resistors CRCW12061K00FKEA Vishay Z1 2300-2700 MHz Band, 90, 2 dB Hybrid Coupler X3C25P1--02S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D60817 MTL A2T26H160--24SR3 4 RF Device Data Freescale Semiconductor, Inc. VDDA C22 VGGA -- R4 C21 C1 C16 C19 C9 R3 C15 C12 R1 C5 C3 Z1 C4 CUT OUT AREA A2T26H160--24S Rev. 7 C7 C C8 P C11 C10 R2 D57842 C17 C6 C18 C2 R5 C20 C14 -- C13 VGGB C23 VDDB Figure 3. A2T26H160--24SR3 Characterization Test Circuit Component Layout -- 2496-2690 MHz Table 6. A2T26H160--24SR3 Characterization Test Circuit Component Designations and Values -- 2496-2690 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C6, C7, C8 9.1 pF Chip Capacitors ATC600F9R1BT250XT ATC C9, C10, C11 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC C12, C13, C14, C15 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK C16, C17, C18, C19, C20, C21 10 F Chip Capacitors C5750X7S2A106K230KB TDK C22, C23 220 F, 63 V Electrolytic Capacitors SK063M0220B5S--1012 Yageo R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay R3 50 , 4 W Chip Resistor CW12010T0050GBK ATC R4, R5 1 K, 1/4 W Chip Resistors CRCW12061K00FKEA Vishay Z1 2300-2700 MHz Band, 90, 2 dB Hybrid Coupler X3C25P1--02S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D57842 MTL A2T26H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 5 50 17.2 17 16.8 48 VDD = 28 Vdc, Pout = 28 W (Avg.), IDQA = 350 mA, VGSB = 0.6 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 16.6 47 46 16.4 -30 -1.8 16.2 -31 -2 16 -32 PARC 15.8 -33 15.6 -34 15.4 2480 ACPR Gps 2510 2540 2570 2600 2630 2660 ACPR (dBc) Gps, POWER GAIN (dB) 49 D -35 2720 2690 -2.2 -2.4 -2.6 PARC (dB) 17.4 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS -2.8 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28 Watts Avg. -15 VDD = 28 Vdc, Pout = 13 W (PEP), IDQA = 350 mA VGSB = 0.6 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2590 MHz -25 -35 IM3-L IM3-U IM7-L -45 IM5-L -55 -65 -75 IM5-U IM7-U 1 10 200 100 TWO-TONE SPACING (MHz) 16.4 0 16.2 16 15.8 15.6 15.4 VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc, f = 2590 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF -1 -2 -5 -26 55 -28 50 -1 dB = 19.4 W D -3 -4 60 45 -2 dB = 27.5 W Gps -3 dB = 37 W ACPR 12 40 -30 -32 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 16.6 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing -34 35 -36 30 -38 PARC 20 28 36 44 52 60 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak-to-Average Ratio Compression (PARC) versus Output Power A2T26H160--24SR3 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 2496 MHz 2590 MHz 16 14 60 0 50 -10 D 40 2590 MHz 2690 MHz ACPR 2496 MHz 12 2690 MHz 2496 MHz Gps 2590 MHz 10 1 10 20 10 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 8 30 100 0 200 -20 -30 -40 ACPR (dBc) 18 Gps, POWER GAIN (dB) 2690 MHz VDD = 28 Vdc, IDQA = 350 mA VGSB = 0.6 Vdc, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth D, DRAIN EFFICIENCY (%) 20 -50 -60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single--Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 18 17 GAIN (dB) 16 VDD = 28 Vdc Pin = 0 dBm IDQA = 350 mA VGSB = 0.6 Vdc Gain 15 14 13 12 2300 2400 2500 2600 2700 2800 2900 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response A2T26H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 7 Table 7. Carrier Side Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, IDQA = 344 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 2496 7.14 - j16.1 7.84 + j15.2 2590 9.88 - j13.4 8.97 + j12.9 2690 9.36 - j9.75 8.30 + j9.00 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 10.6 - j14.6 18.0 48.1 64 53.7 -14 10.1 - j13.1 18.4 48.1 65 54.9 -15 10.7 - j15.6 18.3 48.0 63 53.8 -14 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2496 7.14 - j16.1 8.53 + j15.6 10.2 - j15.9 15.7 48.8 76 54.6 -18 2590 9.88 - j13.4 9.89 + j12.6 10.0 - j14.9 16.0 48.9 77 54.9 -19 2690 9.36 - j9.75 8.59 + j8.15 10.9 - j17.3 15.9 48.8 75 54.1 -19 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load Pull Performance -- Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 344 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 20.2 - j6.73 20.6 46.4 43 62.4 -19 8.83 + j12.5 14.8 - j4.10 21.0 46.4 44 63.0 -21 7.73 + j9.07 13.4 - j5.25 21.0 46.1 41 62.0 -20 f (MHz) Zsource () Zin () 2496 7.14 - j16.1 8.14 + j15.1 2590 9.88 - j13.4 2690 9.36 - j9.75 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 2496 7.14 - j16.1 8.74 + j15.5 2590 9.88 - j13.4 9.78 + j12.1 2690 9.36 - j9.75 7.74 + j8.16 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 17.5 - j8.53 18.2 47.6 57 63.5 -26 13.5 - j4.23 19.0 47.1 52 64.0 -30 12.7 - j5.49 19.0 46.9 49 63.1 -30 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T26H160--24SR3 8 RF Device Data Freescale Semiconductor, Inc. Table 9. Peaking Side Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, VGSB = 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 2496 7.60 - j18.3 7.68 + j19.7 2590 10.1 - j16.7 10.5 + j17.9 2690 11.6 - j11.2 12.8 + j11.3 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 9.04 - j14.6 13.1 50.5 113 54.8 -24 8.89 - j14.2 13.4 50.5 111 54.6 -27 9.69 - j16.8 13.4 50.4 110 54.0 -29 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2496 7.60 - j18.3 8.64 + j20.2 9.31 - j15.9 10.9 51.2 131 55.3 -30 2590 10.1 - j16.7 12.1 + j17.5 9.45 - j15.3 11.3 51.1 129 54.9 -33 2690 11.6 - j11.2 13.1 + j9.46 10.7 - j17.9 11.2 51.0 127 54.4 -35 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Peaking Side Load Pull Performance -- Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 15.2 - j5.96 14.3 49.0 79 66.1 -31 9.24 + j18.8 10.7 - j4.18 14.6 48.6 72 66.6 -35 12.7 + j13.2 9.18 - j7.22 14.6 48.6 72 65.9 -37 f (MHz) Zsource () Zin () 2496 7.60 - j18.3 6.75 + j20.0 2590 10.1 - j16.7 2690 11.6 - j11.2 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 2496 7.60 - j18.3 7.82 + j20.5 2590 10.1 - j16.7 11.2 + j18.4 2690 11.6 - j11.2 13.4 + j10.8 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 15.3 - j7.51 12.2 49.7 94 66.3 -39 11.4 - j6.56 12.6 49.7 93 66.7 -43 9.86 - j8.35 12.6 49.5 88 65.8 -45 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T26H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 9 P1dB - TYPICAL CARRIER SIDE LOAD PULL CONTOURS -- 2590 MHz 0 0 45 E 45.5 -15 47 -20 46 -25 5 46.5 -10 58 P -15 -20 46.5 10 15 20 25 -25 30 56 54 46 5 10 48 52 50 15 20 25 30 REAL () REAL () Figure 9. P1dB Load Pull Output Power Contours (dBm) Figure 10. P1dB Load Pull Efficiency Contours (%) 0 0 21.5 -5 20.5 -10 20 19.5 P -15 19 18.5 -20 -26 -24 21.5 21 E -5 IMAGINARY () IMAGINARY () 46 P 48 60 62 47.5 -10 60 E -5 IMAGINARY () IMAGINARY () -5 -22 E -18 -20 -16 -10 P -15 -14 -12 -20 -10 18 -25 5 10 15 20 25 30 -25 5 10 15 20 25 30 REAL () REAL () Figure 11. P1dB Load Pull Gain Contours (dB) Figure 12. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T26H160--24SR3 10 RF Device Data Freescale Semiconductor, Inc. P3dB - TYPICAL CARRIER SIDE LOAD PULL CONTOURS -- 2590 MHz 0 0 62 46 E 47.5 -5 46.5 47 IMAGINARY () IMAGINARY () -5 -10 48 48.5 -15 E P 60 62 -10 -15 58 P 56 -20 -20 -25 48 47 47.5 5 10 15 50 25 20 -25 30 10 5 54 52 50 15 20 25 30 REAL () REAL () Figure 13. P3dB Load Pull Output Power Contours (dBm) Figure 14. P3dB Load Pull Efficiency Contours (%) 0 19.5 19 E -5 18.5 -10 18 17.5 -15 P -20 -25 17 10 15 -22 -10 -20 -15 -18 P -20 15.5 5 -32 -24 -16 16.5 16 -26 -30 -28 E -5 IMAGINARY () IMAGINARY () 0 19.5 20 25 30 -25 5 10 15 20 25 30 REAL () REAL () Figure 15. P3dB Load Pull Gain Contours (dB) Figure 16. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T26H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 11 P1dB - TYPICAL PEAKING SIDE LOAD PULL CONTOURS -- 2590 MHz 0 46.5 47 47.5 E -5 48.5 -10 49 49.5 50 P -15 66 64 -10 62 58 56 60 54 P -15 52 50 -20 -20 -25 E -5 IMAGINARY () IMAGINARY () 0 48 0 10 5 15 -25 25 20 0 10 5 15 20 25 REAL () REAL () Figure 17. P1dB Load Pull Output Power Contours (dBm) Figure 18. P1dB Load Pull Efficiency Contours (%) 0 0 E -5 -38 -36 -34 -32 E -5 -30 IMAGINARY () IMAGINARY () 14.5 -10 14 P -15 13.5 13 -20 -25 11 11.5 10.5 0 5 -28 P -15 -26 -20 12.5 12 10 -10 -24 15 20 25 -25 0 5 10 15 20 REAL () REAL () Figure 19. P1dB Load Pull Gain Contours (dB) Figure 20. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 25 Gain Drain Efficiency Linearity Output Power A2T26H160--24SR3 12 RF Device Data Freescale Semiconductor, Inc. P3dB - TYPICAL PEAKING SIDE LOAD PULL CONTOURS -- 2590 MHz 0 49 -5 E -5 E 49.5 IMAGINARY () IMAGINARY () 0 48.5 -10 50 -15 47 48 -20 -25 P 49 64 10 5 15 20 -15 -25 25 60 58 56 P 54 52 50 50.5 47.5 48.5 49.5 62 -10 -20 50 0 51 66 0 5 10 15 20 25 REAL () REAL () Figure 21. P3dB Load Pull Output Power Contours (dBm) Figure 22. P3dB Load Pull Efficiency Contours (%) 0 0 12.5 -5 -46 -5 -10 12 -15 P 11 -20 8.5 -25 11.5 0 9.5 10 9 5 -34 -15 P -32 -20 15 20 25 -36 -10 -30 10.5 10 -40 -38 E IMAGINARY () IMAGINARY () E -44 -42 -25 0 5 10 15 20 REAL () REAL () Figure 23. P3dB Load Pull Gain Contours (dB) Figure 24. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 25 Gain Drain Efficiency Linearity Output Power A2T26H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 13 PACKAGE DIMENSIONS A2T26H160--24SR3 14 RF Device Data Freescale Semiconductor, Inc. A2T26H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Aug. 2014 Description Initial Release of Data Sheet A2T26H160--24SR3 16 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Home Page: freescale.com Web Support: freescale.com/support Freescale reserves the right to make changes without further notice to any products herein. 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