Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 8 Publication Order Number:
BC856ALT1/D
1
BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
•Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage BC856
BC857
BC858, BC859
VCEO −65
−45
−30
V
Collector-Base Voltage BC856
BC857
BC858, BC859
VCBO −80
−50
−30
V
Emitter−Base Voltage VEBO −5.0 V
Collector Current − Continuous IC−100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xx = Device Code
M = Date Code
12
3
12
3
xxM
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
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See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
BC856ALT1 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC856 Series
(IC = −10 mA) BC857 Series
BC858, BC859 Series
V(BR)CEO −65
−45
−30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage BC856 Series
(IC = −10 A, VEB = 0) BC857A, BC857B Only
BC858, BC859 Series
V(BR)CES −80
−50
−30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage BC856 Series
(IC = −10 A) BC857 Series
BC858, BC859 Series
V(BR)CBO −80
−50
−30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage BC856 Series
(IE = −1.0 A) BC857 Series
BC858, BC859 Series
V(BR)EBO −5.0
−5.0
−5.0
−
−
−
−
−
−
V
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO −
−−
−−15
−4.0 nA
A
ON CHARACTERISTICS
DC Current Gain BC856A, BC857A, BC858A
(IC = −10 A, VCE = −5.0 V) BC856B, BC857B, BC858B
BC857C, BC858C
(IC = −2.0 mA, VCE = −5.0 V) BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
hFE −
−
−
125
220
420
90
150
270
180
290
520
−
−
−
250
475
800
−
Collector−Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat) −
−−
−−0.3
−0.65
V
Base−Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat) −
−−0.7
−0.9 −
−
V
Base−Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on) −0.6
−−
−−0.75
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
NF
−
−−
−10
4.0
dB
BC856ALT1 Series
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3
BC857/BC858/BC859
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
−0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−0.6
−0.7
−0.8
−0.9
−1.0
−0.5
0
−0.2
−0.4
−0.1
−0.3
1.6
1.2
2.0
2.8
2.4
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0−20
−0.1
−0.4
−0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.7
0.5
0.3
−0.2 −10 −100
−1.0
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = −10 V
VCE = −10 V
TA = 25°C
−55°C to +125°C
IC = −100 mA
IC = −20 mA
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
IC = −200 mAIC = −50 mAIC =
−10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
−0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
−0.5
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
T
TA = 25°C
Cob
Cib
−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
150
−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50
VCE = −10 V
TA = 25°C
TA = 25°C
1.0
BC856ALT1 Series
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4
BC856
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
−0.8
−1.0
−0.6
−0.2
−0.4
1.0
2.0
−0.1 −1.0 −10 −200
−0.2
0.2
0.5
−0.2 −1.0 −10 −200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = −5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−1.0
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0−20
−0.1
−0.4
−0.8
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
−0.2 −2.0 −10 −200
−1.0
TJ = 25°C
IC =
−10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = −5.0 V
TA = 25°C
0−0.5 −2.0 −5.0 −20 −50 −100
−0.05 −0.2 −0.5 −2.0 −5.0
−100 mA
−20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
−0.5 −5.0 −20 −50 −100
−55°C to 125°C
VB for VBE
−2.0 −5.0 −20 −50 −100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2 −1.0 −50
2.0 −2.0 −10 −100
100
200
500
50
20
20
10
6.0
4.0
−1.0 −10 −100
VCE = −5.0 V
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT
T
−0.5 −5.0 −20
TJ = 25°C
Cob
Cib
8.0
−50 mA −200 mA
BC856ALT1 Series
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5
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZJC(t) = r(t) RJC
RJC = 83.3°C/W MAX
ZJA(t) = r(t) RJA
RJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
−100
−50
−10
−5.0
−2.0
−5.0 −10 −30 −45 −65 −100
1 s
BC558, BC559
BC557
BC556
The safe operating area curves indicate IC−VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
BC856ALT1 Series
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6
ORDERING INFORMATION
Device Marking Package Shipping†
BC856ALT1 3A SOT−23 3,000 / Tape & Reel
BC856ALT3 3A SOT−23 10,000 / Tape & Reel
BC856BLT1 3B SOT−23
BC856BLT1G 3B SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC856BLT3 3B SOT−23 10,000 / Tape & Reel
BC857ALT1 3E SOT−23 3,000 / Tape & Reel
BC857BLT1 3F SOT−23 3,000 / Tape & Reel
BC857BLT3 3F SOT−23
BC857BLT3G 3F SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC857CLT1 3G SOT−23 3,000 / Tape & Reel
BC857CLT1G 3G SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC858ALT1 3J SOT−23
BC858ALT1G 3J SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC858BLT1 3K SOT−23
BC858BLT1G 3K SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC858BLT3 3L SOT−23 10,000 / Tape & Reel
BC858CLT1 3L SOT−23
BC858CLT1G 3L SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC858CLT3 3L SOT−23
BC858CLT3G 3L SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC859BLT1 4B SOT−23 3,000 / Tape & Reel
BC859BLT3 4B SOT−23 10,000 / Tape & Reel
BC859CLT1 4C SOT−23 3,000 / Tape & Reel
BC859CLT3 4C SOT−23 10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
BC856ALT1 Series
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7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AI
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0385 0.0498 0.99 1.26
D0.0140 0.0200 0.36 0.50
G0.0670 0.0826 1.70 2.10
H0.0040 0.0098 0.10 0.25
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.
1
3
2
AL
BS
VG
DH
C
KJ
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
BC856ALT1 Series
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8
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BC856ALT1/D
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