Bridge Diode Single In-line Package OUTLINE D3SB Unit : mm Weight : 3.9g typ. Package3S 800V 4A Control No. Type No. * SIP * UL E142422 * IFSM Date code 25 D3SB 60 4.6 0264 15 Feature - * Thin-SIP * UL E142422 * Large IFSM + - 17.5 Web 'PSEFUBJMTPGPVUMJOFEJNFOTJPOT SFGFSUPPVSXFCTJUFPSUIF4FNJDPOEVDUPS 4IPSU'PSN$BUBMPH"TGPSUIFNBSLJOH SFGFSUPUIFTQFDJaDBUJPOi.BSLJOH 5FSNJOBM$POOFDUJPOu RATINGS Absolute Maximum Ratings Tc=25unless otherwise speci Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Unit Tstg -40150 Tj 150 VRM Average Rectified Forward Current IO Peak Surge Forward Current Current Squared Time IFSM Dielectric Strength Mounting Torque Vdis Forward Voltage Reverse Current 2 It TOR VF IR jl ja 52 J534 200 Tc = 108 50Hz With heatsink 50Hz sine wave, Resistance load Ta = 25 Without heatsink 50Hz Tj = 25 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 1mst10msTj = 25 per diode AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque : 0.5 Nm 600 800 4 IF = 2A, Pulse measurement, per diode VR = VRM, Pulse measurement, per diode Junction to Case, With heatsink Junction to Lead, Without heatsink Junction to Ambient, Without heatsink V A 2.3 120 A 60 A 2s 2 kV 0.8 Nm Electrical Characteristics Tc=25unless otherwise speci jc Thermal Resistance D3SB20 D3SB60 D3SB80 Symbol Conditions Item Type No. MAX 1.05 MAX 10 MAX 5.5 MAX 6 MAX 30 V A /W Thin SIP UL Bridge D3SB CHARACTERISTIC DIAGRAMS Sine wave 50Hz )[TJOFXBWFJTVTFEGPSNFBTVSFNFOUT Typical 4FNJDPOEVDUPSQSPEVDUTHFOFSBMMZIBWFDIBSBDUFSSJTUJDWBSJBUJPO 5ZQJDBMJTBTUBUJTUJDBMBWFSBHFPGUIFEFWJDFhTBCJMJUZ J534 53