HMC941 v00.0910 ATTENUATORS - DIGITAL - CHIP 1 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz Typical Applications Features The HMC941 is ideal for: 0.5 dB LSB Steps to 15.5 dB * Fiber Optics & Broadband Telecom Single Positive Control Line Per Bit * Microwave Radio & VSAT 0.5 dB Typical Bit Error * Military Radios, Radar & ECM High Input IP3: +45 dBm * Space Applications Die Size: 2.29 x 0.95 x 0.1 mm Functional Diagram General Description The HMC941 die is a broadband 5-bit GaAs IC digital attenuator MMIC chip. Covering 0.1 to 30 GHz, the insertion loss is less than 4 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at less than 0.5 dB typical step error with an IIP3 of +45 dBm. Five control voltage inputs, toggled between +5V and 0V, are used to select each attenuation state. Electrical Specifications, TA = +25 C, With Vdd = +5V, Vss = -5V & VCTL = 0/ +5V Parameter Frequency (GHz) Typ. Max. Units 0.1 - 18.0 GHz 18.0 - 30.0 GHz 2.5 4.0 3.5 4.8 dB dB Attenuation Range 0.1 - 30.0 GHz 15.5 dB Return Loss (RF1 & RF2, All Atten. States) 0.1 - 30.0 GHz 15 dB Insertion Loss Min. Attenuation Accuracy: (Referenced to Insertion Loss) 0.5 - 7.5 dB States 8 - 15.5 dB States 0.1 - 30.0 GHz 0.1 - 30.0 GHz 0.3 + 4% of Atten. Setting Max 0.3 + 5% of Atten. Setting Max Input Power for 0.1 dB Compression 0.1 - 0.5 GHz 0.5 - 30.0 GHz 22 27 dBm dBm Input Third Order Intercept Point (Two-Tone Input Power= 0 dBm Each Tone) 0.1 - 0.5 GHz 0.5 - 30.0 GHz 42 45 dBm dBm Switching Characteristics 0.1 - 30.0 GHz 60 90 ns ns tRISE, tFALL (10/90% RF) tON/tOFF (50% CTL to 10/90% RF) 1-1 dB dB Idd 0.1 - 30.0 GHz 3 5 7 mA Iss 0.1 - 30.0 GHz -4 -6 -8 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC941 v00.0910 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz (Only Major States are Shown) 0 INSERTION LOSS (dB) -2 -3 -4 +25 C +85 C -55 C -5 -6 -5 -10 -15 -20 0 5 10 15 20 25 30 35 40 0 5 10 FREQUENCY (GHz) 15 20 25 30 35 40 30 35 40 30 35 40 FREQUENCY (GHz) Input Return Loss Output Return Loss (Only Major States are Shown) (Only Major States are Shown) 0 -10 -10 RETURN LOSS (dB) 0 -20 -30 -40 -20 -30 ATTENUATORS - DIGITAL - CHIP NORMALIZED ATTENUATION (dB) 0 -1 RETURN LOSS (dB) 1 Normalized Attenuation Insertion Loss vs. Temperature -40 -50 -50 0 5 10 15 20 25 30 35 40 0 5 10 FREQUENCY (GHz) 15 20 25 FREQUENCY (GHz) Bit Error vs. Frequency Bit Error vs. Attenuation State (Only Major States are Shown) 1.5 1 0.8 1 0.4 BIT ERROR (dB) BIT ERROR (dB) 0.6 0.2 0 -0.2 -0.4 10 GHz 20 GHz 30 GHz -0.6 15.5 dB 0.5 0 -0.5 -1 -0.8 -1 -1.5 0 4 8 12 ATTENUATION STATE (dB) 16 0 5 10 15 20 25 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 1-2 HMC941 v00.0910 Relative Phase vs. Frequency Step Attenuation vs. Attenuation State 60 1 50 0.8 STEP ATTENUATION (dB) RELATIVE PHASE (deg) (Only Major States are Shown) 40 15.5 dB 30 20 10 0 -10 0.6 0.4 0.2 0 10 GHz 20 GHz 30 GHz -0.2 0 5 10 15 20 25 30 35 -0.4 40 0 4 FREQUENCY (GHz) 50 IP3 (dBm) 50 40 15.5 dB 40 +25 C +85 C -40 C 30 30 20 5 10 15 20 25 30 35 40 20 0.1 1 100 Truth Table Input Power for 0.1 dB Compression 30 P0.1dB (dBm) 10 FREQUENCY (GHz) FREQUENCY (GHz) Control Voltage Input 26 P4 8 dB P3 4 dB P2 2 dB P1 1 dB P0 0.5 dB Attenuation State RF1 - RF2 22 High High High High High Reference I.L. High High High High Low 0.5 dB High High High Low High 1 dB High High Low High High 2 dB High Low High High High 4 dB Low High High High High 8 dB Low Low Low Low Low 15.5 dB 18 14 10 6 0.01 0.1 1 FREQUENCY (GHz) 1-3 16 (Minimum Attenuation State) 60 0 12 Input IP3 vs. Temperature 60 8 dB 8 ATTENUATION STATE (dB) Input IP3 Over Major Attenuation States IP3 (dBm) ATTENUATORS - DIGITAL - CHIP 1 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz 10 100 Any Combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC941 Absolute Maximum Ratings 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz 1 Bias Voltages & Currents RF Input Power (0.5 to 30 GHz) +27 dBm Vdd +5V @ 5 mA Control Voltage (P0 to P4) Vdd + 0.5V Vss -5V @ 6 mA Vdd +7 Vdc Vss -7 Vdc Channel Temperature 150 C Thermal Resistance (channel to die bottom) 146 C/W Storage Temperature -65 to + 150 C Operating Temperature -55 to +85 C Control Voltage State Bias Condition Low 0 to 0.8V @ 1 A High 2 to 5V @ 1 A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS). 2. TYPICAL BOND PAD IS .004" SQUARE. 3. TYPICAL BOND PAD SPACING IS .006" CENTER TO CENTER EXCEPT AS NOTED. 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD Die Packaging Information ATTENUATORS - DIGITAL - CHIP v00.0910 [1] Standard Alternate WP-9 (Waffle Pack) [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 1-4 HMC941 v00.0910 1 Pad Descriptions Pad Number ATTENUATORS - DIGITAL - CHIP 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz Function Description GND Die bottom must be connected to RF ground. 1, 9 RF1, RF2 This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 2 Vss Negative Bias -5V 3-7 P0 - P4 See truth table and control voltage table. 8 Vdd Positive Bias +5V Interface Schematic Assembly Diagram 1-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC941 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. RF Ground Plane 0.150mm (0.005") Thick Moly Tab ATTENUATORS - DIGITAL - CHIP v00.0910 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 1-6