ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features * * * * Low ON-resistance 2.5V drive Common-drain type Protection diode in * * * Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 30 V 12 V 7 A PW10s, duty cycle1% 60 A When mounted on ceramic substrate (900mm2x0.8mm) 1unit 1.3 W Total Power Dissipation PD PT 1.4 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C When mounted on ceramic substrate (900mm2x0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-003 * Package : ECH8 * JEITA, JEDEC :* Minimum Packing Quantity : 3,000 pcs./reel ECH8664R-TL-H Top View Packing Type : TL 0.25 2.9 Marking 0.15 8 TK 5 2.3 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.9 0.25 LOT No. TL 0.07 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 62712 TKIM/72308PE TIIM TC-00001451 No. A1185-1/7 ECH8664R Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V 30 V IGSS VGS(off) | yfs | VGS=8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=3.5A 4.5 7.5 RDS(on)1 ID=3.5A, VGS=4.5V 12.5 18 23.5 m RDS(on)2 ID=3.5A, VGS=4.0V 13 19 25 m RDS(on)3 ID=2A, VGS=3.1V 14.5 21 27.3 m RDS(on)4 ID=2A, VGS=2.5V 14.5 24 34 m 1 A 10 A 1.3 V S Turn-ON Delay Time td(on) 270 ns Rise Time tr 850 ns Turn-OFF Delay Time td(off) Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=4.5V, ID=7A IS=7A, VGS=0V 3300 ns 1700 ns 10 nC 2.1 nC 2.0 nC 0.75 1.2 V Switching Time Test Circuit VDD=15V VIN 4V 0V ID=3.5A RL=4.3 VOUT VIN D PW=10s D.C.1% Rg G ECH8664R P.G 50 S Rg=1k Ordering Information Device ECH8664R-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1185-2/7 ECH8664R ID -- VDS 10.0 9 6 5 VGS=1.5V 4 3 5 4 3 1 0 0 0.3 0.4 0 0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- m ID=2.0A 40 3.5A 35 30 25 20 15 10 5 0 2 4 6 8 Source Current, IS -- A 5 C --25 Ta= 3 75C 25C 2 1.0 7 5 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 10 IT13620 3 tf 2 1000 tr 7 5 td(on) 3 A =2.0 , ID V 5 . =2 VGS 25 20 2 5A =3. , ID V 5 . =4 VGS A =3.5 V, I D 15 =4.0 VGS 10 --40 --20 0 20 40 60 80 100 120 140 160 IT13619 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage, VSD -- V 0.9 1.0 IT13621 VGS -- Qg 4.5 Gate-to-Source Voltage, VGS -- V VDD=10V VGS=4.5V td(off) 5 =3 S VG 30 0.01 7 5 3 2 0.001 0.1 SW Time -- ID 7 35 Ambient Temperature, Ta -- C VDS=10V 7 =2 , ID V .1 10 7 5 3 2 10 2.5 IT13617 .0A 40 IT13618 | yfs | -- ID 3 2.0 45 5 -60 10 Gate-to-Source Voltage, VGS -- V 1.5 RDS(on) -- Ta 50 Ta=25C 45 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 50 0.5 IT13807 5C 25 C --25 C 0.2 Ta= 7 0.1 25 C 1 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- m 6 2 0 Forward Transfer Admittance, | yfs | -- S 7 --25C 7 Ta= 75 C Drain Current, ID -- A Drain Current, ID -- A 8 2 Switching Time, SW Time -- ns VDS=10V 9 8 2 ID -- VGS 10 V 4.5 V 4.0 V 3.1 V 2 .5 V 10 VDS=10V ID=7A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 0.01 0 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT13684 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT13685 No. A1185-3/7 ECH8664R ASO 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW10s 10 1m ID=7A 0 s ms 0m s op era Operation in this area is limited by RDS(on). s 10 10 DC PD -- Ta 1.6 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 2 tio 0.1 7 Ta=25C 5 Single pulse 3 2 When mounted on ceramic substrate 2 0.01 (900mm x0.8mm) 1unit 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 n When mounted on ceramic substrate (900mm2x0.8mm) 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u ni t ip ati on 0.6 0.4 0.2 0 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13808 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT13799 No. A1185-4/7 ECH8664R Embossed Taping Specification ECH8664R-TL-H No. A1185-5/7 ECH8664R Outline Drawing ECH8664R-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1185-6/7 ECH8664R Note on usage : Since the ECH8664R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1185-7/7