S9973-1008 - Hamamatsu Photonics K.K.

S9972/S9973 series

The S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By

using the binning operation, the S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device

length. This makes the S9972/S9973 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in

S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. The

S9972/S9973 series also feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration

time, thus achieving a wide dynamic range.

The S9972/S9973 series have an effective pixel size of 24 × 24 µm and are available in image areas of 24.576 (H) × 2.976 (V) mm2 (1024 × 124

pixels) and 24.576 (H) × 6.048 (V) mm2 (1024 × 252 pixels). The S9972/S9973 series are pin compatible with the S9970/S9971 series. (Operating

conditions and characteristics are a little bit different from the S9970/S9971 series.)

Features

1024 (H) × 124 (V) and 1024 (H) × 252 (V) pixel format

Pixel size: 24 × 24 µm

Line/pixel binning

100% fill factor

Wide dynamic range

Low dark signal

Low readout noise

MPP operation

High near IR sensitivity

Applications

Fluorescence spectrometer, ICP

Raman spectrometer

Industrial inspection requiring

Semiconductor inspection

DNA sequencer

Low-light-level detection

IMAGE SENSOR

CCD area image sensor

Front-illuminated FFT-CCD, high near IR sensitivity

■ Selection guide

Type no. Cooling Number of

total pixels

Number of

active pixels

Active area

[mm (H) × mm (V)]

Suitable

multichannel

detector head

S9972-1007 1044 × 128 1024 × 124 24.576 × 2.976

S9972-1008 Non-cooled 1044 × 256 1024 × 252 24.576 × 6.048 C7020-02

S9973-1007 1044 × 128 1024 × 124 24.576 × 2.976 C7021-02

S9973-1008

One-stage

TE-cooled 1044 × 256 1024 × 252 24.576 × 6.048 C7025-02

■ General ratings

Parameter S9972 series S9973 series

Pixel size 24 (H) × 24 (V) µm

Vertical clock phase 2-phase

Horizontal clock phase 2-phase

Output circuit One-stage MOSFET source follower

Package 24-pin ceramic DIP (refer to dimensional outlines)

Window*1 Quartz glass S9973-1007: sapphire

S9973-1008: AR-coated sapphire

*1: Temporary window type (ex. S9972-1007N) and UV coat type (ex. S9972-1007UV) are available upon request.

(On the temporary window type, a window is temporarily attached by tape to protect the CCD chip and wires.)

CCD area image sensor

S9972/S9973 series

■ Absolute maximum ratings (Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Operating temperature Topr -50 - +30 °C

Storage temperature Tstg -50 - +70 °C

OD voltage VOD -0.5 - +25 V

RD voltage VRD -0.5 - +18 V

ISV voltage VISV -0.5 - +18 V

ISH voltage VISH -0.5 - +18 V

IGV voltage VIG1V, VIG2V -15 - +15 V

IGH voltage VIG1H, VIG2H -15 - +15 V

SG voltage VSG -15 - +15 V

OG voltage VOG -15 - +15 V

RG voltage VRG -15 - +15 V

TG voltage VTG -15 - +15 V

Vertical clock voltage VP1V, VP2V -15 - +15 V

Horizontal clock voltage VP1H, VP2H -15 - +15 V

■ Operating conditions (MPP mode, Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Output transistor drain voltage VOD 18 20 22 V

Reset drain voltage VRD 12 13 14 V

Output gate voltage VOG -0.5 0 2 V

Substrate voltage VSS - 0 - V

Test point (vertical input source) VISV - VRD - V

Test point (horizontal input source) VISH - VRD - V

Test point (vertical input gate) VIG1V, VIG2V -8 0 - V

Test point (horizontal input gate) VIG1H, VIG2H -8 0 - V

High VP1VH, VP2VH 0 4 6

Vertical shift register

clock voltage Low VP1VL, VP2VL -9 -8 -7

High VP1HH, VP2HH 0 4 6 Horizontal shift register

clock voltage Low VP1HL, VP2HL -9 -8 -7 V

High VSGH 0 4 6

Summing gate voltage Low VSGL -9 -8 -7

High VRGH 0 4 6

Reset gate voltage Low VRGL -9 -8 -7 V

High VTGH 0 4 6

Transfer gate voltage Low VTGL -9 -8 -7

External load resistance RL 9 10 11 kΩ

■ Electrical characteristics (Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Signal output frequency fc - 0.1 1 MHz

S9972/S9973-1007 - 1600 - Vertical shift register

capacitance S9972/S9973-1008 CP1V, CP2V - 3200 - pF

Horizontal shift register capacitance CP1H, CP2H - 180 - pF

Summing gate capacitance CSG - 7 - pF

Reset gate capacitance CRG - 7 - pF

Transfer gate capacitance CTG - 100 - pF

Transfer efficiency*2 CTE 0.99995 0.99999 - -

DC output level Vout 12 15 18 V

Output impedance Zo - 3 - kΩ

Power dissipation*3 P - 15 - mW

*2: Charge transfer efficiency per pixel, measured at half of the full well capacity

*3: Power dissipation of the on-chip amplifier plus load resistance

CCD area image sensor

S9972/S9973 series

■ Spectral response (without window)*12

200 400300 500 600 700

Wavelength (nm)

800 900 100011001200

Quantum efficiency (%)

(Typ. Ta=25 ˚C)

S9970/S9971

series S9972/S9973

series

■ Spectral transmittance characteristics of window material

Wavelength (nm)

Transmittance (%)

100 200 300 400 500 600 700 800 900 1000

100 (Typ. Ta=25 ˚C)

Quartz glass

Sapphire

AR-coated sapphire

■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

Parameter Symbol Min. Typ. Max. Unit

Saturation output voltage Vsat - Fw × Sv - V

Vertical 120 240 - Full well

capacity Horizontal Fw 240 480 - ke-

CCD node sensitivity*4 Sv - 2.8 - µV/e-

+25 °C - 2000 30000 Dark current*5

(MPP mode) 0 °C DS - 100 1500 e-/pixel/s

Readout noise*6 Nr - 4 18 e-rms

Line binning 60000 120000 -

Dynamic range*7 Area scanning - 30000 60000 - -

Spectral response range λ - 400 to 1100 - nm

Photo response non-uniformity*8 PRNU - - ±10 %

Point defects*9 - - 0

Cluster defects*10 - - 0

Blemish

Column defects*11

- - 0

*4: VOD=20 V , Load resistance=10 kΩ

*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.

*6: -40 °C, operating frequency is 80 kHz.

*7: Dynamic range (DR) = Full well capacity / Readout noise

*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)

*9: White spots

Pixels that generate dark current higher than 3% of the saturation. (Measured at 0 °C, Ts=1 s)

Black spots

Pixels whose sensitivity is lower than one-half of the average pixel output (Measured with uniform light producing one-half

of the saturation charge)

*10: 2 to 9 contiguous defective pixels

*11: 10 or more contiguous defective pixels

KMPDB0257EC KMPDB0310EA

Fixed pattern noise (peak to peak)

Signal × 100

[%]Photo response non-uniformity =

*12: Spectral response with sapphire or AR-coated sapphire is

decreased according to the spectral transmittance charac-

teristic of window material.

CCD area image sensor

S9972/S9973 series

■ Device structure (conceptual drawing of top view in dimensional outlines)

......

IG1V IG2V ISV SS

OD OG SG

D10

D11

D12

D13

D14

D15

D16

D17

D18

D19

D20

456

23 2224 16 15

V=124, 252

H=1024

ISH

IG1H

IG2H

P1HP2H

11109

4 blank pixels4 blank pixels

4 optical

black pixels 4 optical

black pixels

1024 signal out

2 isolation pixels 2 isolation pixels

TG P1V 14

P2V

Pixel format

Left ← Horizontal Direction → Right

Blank Optical Black Isolation Effective Isolation Optical Black Blank

4 4 2 1024 2 4 4

Top ← Vertical Direction → Bottom

Isolation Effective Isolation

2 124 or 252 2

KMPDC0237EB

■ Dark current vs. temperature

10000

1000

100

0.1

0.01

-50 -30-40 -20 -10 0

Temperature (˚C)

10 3020

Dark current (e-/pixel/s)

(Typ.)

KMPDB0302EA

■ Window material

Type No. Window material

S9972 series Quartz glass*13

(option: window-less)

S9973-1007 Sapphire*14

(option: window-less)

S9973-1008 AR-coated sapphire*14

(option: window-less)

*13: Resin sealing

*14: Hermetic sealing

CCD area image sensor

S9972/S9973 series

Integration period

(shutter has to be open)

P1V

P2V, TG

P1H

P2H, SG

Readout period (shutter has to be closed)

Enlarged view

Tpwv

Tovr

Tpwr

D1 D2 D3 D4 D18 D19 D20

P2V, TG

P1H

P2H, SG

Tpwh, Tpws

123

4..127

4..255

D5..D10, S1..S1024, D11..D17

128←124 + 4 (isolation): S9972/S9973-1007

256←252 + 4 (isolation): S9972/S9973-1008

KMPDC0240EB

Parameter Symbol Min. Typ. Max. Unit

S9972/S9973-1007 6.0 18 -

Pulse width*15 S9972/S9973-1008 Tpwv 12 36 -

µs

P1V, P2V, TG

Rise and fall times Tprv, Tpfv 200 - - ns

Pulse width Tpwh 500 5000 - ns

Rise and fall times*15 Tprh, Tpfh 10 - - ns

P1H, P2H

Duty ratio - - 50 - %

Pulse width Tpws 500 5000 - ns

Rise and fall times Tprs, Tpfs 10 - - ns

Duty ratio - - 50 - %

Pulse width Tpwr 100 500 - ns

RG Rise and fall times Tprr, Tpfr 5 - - ns

TG - P1H Overlap time Tovr 3 6 - µs

*15: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude.

Area scanning (large full well mode)

Integration period

(shutter has to be open) Vertical binning period

(shutter has to be closed)

3..126

3..254 127

255 128←

256←

P1V

P2V, TG

P1H

P2H, SG

Readout period (shutter has to be closed)

124 + 4 (isolation): S9972/S9973-1007

252 + 4 (isolation): S9972/S9973-1008

Tpwv

Tovr

Tpwh, Tpws

Tpwr

123 1043 1044: S9972/S9973-1007/-10084..1042

D19D2D1 D20

D3..D10, S1..S1024, D11..D18

KMPDC0238EB

■ Timing chart

Line binning

CCD area image sensor

S9972/S9973 series

■ Dimensional outlines (unit: mm)

Active area 24.576

40.64 ± 0.41

112

24 13

14.99 ± 0.25

6.048

1.1 ± 0.3

1st pin index mark

Photosensitive

surface

0.51 ± 0.05

3.0 ± 0.3

2.54 ± 0.13

27.94 ± 0.13

Photosensitive surface

KMPDA0205EB

Active area 24.576

40.64 ± 0.41

112

24 13

10.05 ± 0.25

2.976

1.1 ± 0.3

1st pin index mark

Photosensitive

surface

0.46 ± 0.05

3.0 ± 0.3

2.54 ± 0.13

27.94 ± 0.13

Photosensitive surface

KMPDA0204EB

S9972-1008

S9972-1007

Active area 24.576

40.64 ± 0.41

112

24 13

14.99 ± 0.25

2.976

3.2 ± 0.4

7.1

12.0

4.0

5.0 ± 0.3

0.46 ± 0.05

2.54 ± 0.13

27.94 ± 0.13

7.65 ± 0.5

58.84 ± 0.13

1st pin index mark

Photosensitive surface

TE-cooler

KMPDA0206EB

S9973-1007

CCD area image sensor

S9972/S9973 series

7.3 ± 0.63

1.0

6.7 ± 0.63

5.3 ± 0.15

Photosensitive surface

(24×) 0.5 ± 0.05

7.7 ± 0.68

1st pin indication pad

6.048

4.0

19.0

22.4 ± 0.3

22.9 ± 0.3

44.0 ± 0.44

52.0

60.0 ± 0.3

2.54 ± 0.13

Window 28.6*

Active area 24.576

8.2*

TE-cooler

* Size of window that guarantees the transmittance in the

“Spectral transmittance characteristics of window material” graph

KMPDA0198EB

S9973-1008

■ Pin connections

S9972 series S9973 series

Pin No. Symbol Description Symbol Description

Remark

(standard operation)

1 RG Reset gate RG Reset gate

2 RD Reset drain RD Reset drain +13 V

3 OS Output transistor source OS Output transistor source RL=10 kΩ

4 OD Output transistor drain OD Output transistor drain +20 V

5 OG Output gate OG Output gate 0 V

6 SG Summing gate SG Summing gate Same timing as P2H

7 - Th1 Thermistor

8 - Th2 Thermistor

9 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2

10 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1

11 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) 0 V

12 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) 0 V

13 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Shorted to RD

14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2

15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1

16 TG*16 Transfer gate TG*16 Transfer gate Same timing as P2V

17 - -

18 - P- TE-cooler-

19 - P+ TE-cooler+

20 SS Substrate (GND) SS Substrate (GND) GND

21 - -

22 ISV Test point (vertical input source) ISV Test point (vertical input source) Shorted to RD

23 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) 0 V

24 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) 0 V

*16: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse as P2V should

be applied to TG.

CCD area image sensor

S9972/S9973 series

■ Specifications of built-in TE-cooler (Typ.)

Parameter Symbol Condition S9973-1007 S9973-1008 Unit

Internal resistance Rint Ta=25 °C 6.0 1.2 Ω

Maximum current*17 Imax Tc*18=Th*19=25 °C 1.5 3.0 A

Maximum voltage Vmax Tc*18=Th*19=25 °C 8.8 3.6 V

Maximum heat

absorption*20 Qmax 6.7 5.1 W

Maximum temperature

of hot side - 70 °C

*17: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that

this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current

should be less than 60 % of this maximum current.

*18: Temperature of cool side of thermoelectric cooler

*19: Temperature of hot side of thermoelectric cooler

*20: This is a heat absorption when the maximum current is supplied to the TE-cooler.

■ TE-cooler characteristics

-30

2.01.51.00.50

-20

-10

(Typ. Ta=25 ˚C)

Voltage (V)

CCD temperature (˚C)

Current (A)

Voltage vs. current

CCD temperature vs. current

KMPDB0177EB

S9973-1007

Voltage (V)

CCD temperature (˚C)

-40

-30

432

Current (A)

-20

-10

(Typ. Ta=25 ˚C)

Voltage vs. current

CCD temperature vs. current

KMPDB0179EB

S9973-1008

CCD area image sensor

S9972/S9973 series

■ Precaution for use (Electrostatic countermeasures)

● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in

order to prevent electrostatic damage due to electrical charges from friction.

● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

● Provide ground lines or ground connection with the work-floor, wor k-desk and work-bench to allow static electricity to

discharge.

● Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the

amount of damage that occurs.

■ Element cooling/heating temperature gradient rate

When using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 K/min.

■ Specifications of built-in temperature sensor

A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A

relation between the thermistor resistance and absolute temperature is expressed by the following equation.

RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)

T1: Resistance at absolute temperature T1 [K]

T2: Resistance at absolute temperature T2 [K]

T1/T2: B constant [K]

The characteristics of the thermistor used are as follows.

298=10 kΩ

298/323=3450 K

KMPDB0111EB

10 kΩ

220 240 260

Temperature (K)

Resistance

280 300

100 kΩ

1 MΩ

Features

C7020-02: for S9972 series

C7021-02: for S9973-1007

C7025-02: for S9973-1008

Area scanning or full line-binnng operation

Readout frequency: 250 kHz

Readout noise: 20 e-rms

∆T=50 ˚C (∆T changes by radiation method.)

TECTOR

HE D

(C7020,

C7021,

C7025)

Input Symbol Value

Supply

voltage

VD1

VA1+

VA1-

VA2

VD2

+5 Vdc, 200 mA

+15 Vdc, +100 mA

-15 Vdc, -100 mA

+24 Vdc, 30 mA

+5 Vdc, 30 mA (C7021-02, C7025-02)

+5 Vdc, 2.5 A (C7021-02, C7025-02)

+12 Vdc, 100 mA (C7021-02, C7025-02)

Master start φms HCMOS logic compatible

Master clock φmc HCMOS logic compatible, 1 MHz

Multichannel detector head (C7020-02, C7021-02, C7025-02)

CCD area image sensor S9972/S9973 series

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.

Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"

Cat. No. KMPD1092E04

Nov. 2009 DN

Multichannel detector head controller

Type no. Interface Photo Accessories

S7557 SCSI

·SCSI terminator

·Fuse (2.5 A)

·Detector head connection cable

·AC cable

·Software (compatible OS: Windows 98/ME*21)

·Operation manual

S7557-01 USB2.0

·USB cable

·Fuse (2.5 A)

·Detector head connection cable

·AC cable

·Software (compatible OS: Windows 2000/XP/Vista)

·Operation manual

·MOS adapter

Note: SCSI cable and SCSI board (card) are not supplied with the C7557

*21: This software may be run on Windows 2000/NT/XP with a simple task. For information on how to do this, please consult

with our sales office.

■ Connection example

AC cable (100 to 240 V;

included with the C7557-01

)

PC (Windows 2000/XP/Vista)

C7557-01

USB cable

(Included with

the C7557-01)

Image sensor

Multichannel

detector head

(USB 2.0)

Shutter*

timing pulse

Dedicated cable

(Included with the C7557-01)

* Shutter, etc. are not available.

TE CONTROL I/O

SIGNAL I/O

POWER

Trig.

KACCC0402EA