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www.littelfuse.com 3 - 8 © 2006 Littelfuse • Telecom Design Guide
MicroCapacitance (MC) SA SIDACtor® Device
These DO-214AA SAMC SIDACtor devices are intended for applications sensitive to load
values. Typically, high speed connections, such as Ethernet, xDSL, and T1/E1, require a
lower capacitance. CO values for the MicroCapacitance device are 40% lower than a
standard SA part.
This SAMC SIDACtor series enables equipment to comply with various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-
968-A (formerly known as FCC Part 68).
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For surge ratings, see table below.
General Notes:
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.
• IPP is a repetitive surge rating and is guaranteed for the life of the product.
• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• VDRM is measured at IDRM.
• VS is measured at 100 V/µs.
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.
* Current waveform in µs
** Voltage waveform in µs
Electrical Parameters
Part
Number *
VDRM
Volts
VS
Volts
VT
Volts
IDRM
µAmps
IS
mAmps
IT
Amps
IH
mAmps
P0080SAMCL 6 25 4 5 800 2.2 50
P0220SAMCL 15 32 4 5 800 2.2 50
P0300SAMCL 25 40 4 5 800 2.2 50
Surge Ratings in Amps
Series
IPP
ITSM
50 / 60 Hz di/dt
0.2x310 *
0.5x700 **
2x10 *
2x10 **
8x20 *
1.2x50 **
10x160 *
10x160 **
10x560 *
10x560 **
5x320 *
9x720 **
10x360 *
10x360 **
10x1000 *
10x1000 **
5x310 *
10x700 **
Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps/µs
A 20 150 150 90 50 75 75 45 75 20 500
¨
MicroCapacitance (MC) SA SIDACtor® Device
Telecom Design Guide • © 2006 Littelfuse 3 - 9 www.littelfuse.com
SIDACtor Devices
Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias.
Thermal Considerations
Package Symbol Parameter Value Unit
DO-214AA TJOperating Junction Temperature Range -40 to +150 °C
TSStorage Temperature Range -65 to +150 °C
RθJA Thermal Resistance: Junction to Ambient 90 °C/W
Capacitance Values
Part Number
pF
MIN MAX
P0080SAMCL 25 55
P0220SAMCL 25 50
P0300SAMCL 15 35
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+
V
-V
+I
-I
V
S
V-I Characteristics
50
100
0
t
r
t
d
0
Peak
Value
Half Value
t – Time (µs)
I
PP
– Peak Pulse Current – %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
tr x td Pulse Waveform
-8
-40 -20 0 20 40 60 80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) – ˚C
Percent of V
S
Change – %
25 ˚C
Normalized VS Change versus Junction Temperature
0.4
-40 -20 0 20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Case Temperature (TC) – ˚C
Ratio of
IH
IH (TC = 25 ˚C)
25 ˚C
Normalized DC Holding Current versus Case Temperature