Ordering number : ENN7681 2SK3703 N-Channl Silicon MOSFET 2SK3703 General-Purpose Switching Device Applications Features * * * Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. unit : mm 2063A [2SK3703] 4.5 2.8 10.0 3.5 7.2 * Package Dimensions 5.6 18.1 16.0 3.2 2.4 14.0 1.6 1.2 0.7 0.75 1 2 3 2.55 1 : Gate 2 : Drain 3 : Source 2.4 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta=25C Parameter Symbol 2.55 SANYO : TO-220ML Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS 20 V ID 30 A Drain Current (DC) Drain Current (Pulse) IDP PW10s, duty cycle1% V 120 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Tc=25C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A Ratings min typ Unit max 60 V 10 A A 2.6 V 1 1.2 13 Marking : K3703 22 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61504 TS IM TA-100813 No.7681-1/4 2SK3703 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=15A, VGS=10V ID=15A, VGS=4V Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 1780 Output Capacitance 266 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 197 pF Turn-ON Delay Time td(on) See specified Test Circuit. 16.5 ns Rise Time tr td(off) See specified Test Circuit. 110 ns See specified Test Circuit. 166 ns tf See specified Test Circuit. 144 ns Turn-OFF Delay Time Fall Time Conditions min typ Unit max 20 26 m 28 40 m Total Gate Charge Qg VDS=30V, VGS=10V, ID=30A 40 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=30A 6.5 nC Gate-to-Drain "Miller" Charge Qgd VDS=30V, VGS=10V, ID=30A 11.5 Diode Forward Voltage VSD IS=30A, VGS=0 Switching Time Test Circuit nC 1.0 1.2 V VDD=30V VIN 10V 0V ID=15A RL=2 VIN D VOUT PW=10s D.C.1% G 2SK3703 50 Tc= --25 C 75 C VDS=10V 6V V Tc=25C 10 45 ID -- VGS 50 45 4V 40 Drain Current, ID -- A 8V 40 35 30 25 20 15 VGS=3V 35 30 25 20 15 10 5 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Drain-to-Source Voltage, VDS -- V 2.0 0 50 40 Tc=75C 25C 20 --25C 10 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT05388 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IT05387 RDS(on) -- Tc 60 Static-Drain-to-Source On-State Resistance, RDS(on) -- m 60 1.0 Gate-to-Source Voltage, VGS -- V ID=15A 30 0.5 IT05386 RDS(on) -- VGS 70 Static-Drain-to-Source On-State Resistance, RDS(on) -- m 25 C 10 0 25 C ID -- VDS 50 Drain Current, ID -- A S Tc= 75 --25 C C P.G 50 4V S= 40 VG A, 15 I D= 30 V 10 S= A, VG 15 I D= 20 10 0 --50 --25 0 25 50 75 100 Case Temperature, Tc -- C 125 150 IT05389 No.7681-2/4 2SK3703 yfs -- ID 7 5 25 5C -2 =- 7 Tc 5 75 C C 3 2 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 0.1 7 5 3 2 3 5 0 3 1.2 IT05391 f=1MHz Ciss Ciss, Coss, Crss -- pF 2 tf 7 5 tr 3 2 0.9 3 td(off) 100 0.6 Ciss, Coss, Crss -- VDS 5 VDD=30V VGS=10V 2 0.3 Diode Forward Voltage, VSD -- V IT05390 SW Time -- ID 5 Switching Time, SW Time -- ns 1.0 7 5 3 2 0.01 7 5 3 2 0.001 1.0 7 5 0.1 10 7 5 3 2 5C 25 C --25 C 2 VGS=0 Tc= 7 3 10 IF -- VSD 5 3 2 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 100 1000 7 5 Coss Crss 3 2 td(on) 100 10 0.1 7 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 3 5 0 Drain Current, ID -- A 8 5 4 3 10 7 5 15 20 25 30 Total Gate Charge, Qg -- nC 35 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 0 1m s 10 ms 0m s era tio n op 2 3 5 7 10 2 3 5 7 IT05395 PD -- Tc 35 2.0 0 s 0 s Drain-to-Source Voltage, VDS -- V IT05394 PD -- Ta 2.5 <1 Tc=25C Single pulse 0.1 0.1 40 10 Operatuon in this area is limited by RDS(on). 3 2 3 2 0 Allowable Power Dissipation, PD -- W DC 1 10 30 IT05393 <10s ID=30A 3 2 1.0 7 5 5 25 10 2 0 20 IDP=120A 100 7 5 6 15 ASO 3 2 7 10 Drain-to-Source Voltage, VDS -- V VDS=30V ID=30A 9 5 IT05392 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 2 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT05397 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT05396 No.7681-3/4 2SK3703 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7681-4/4