2SK3703
No.7681-1/4
Features
•Low ON-resistance.
•4V drive.
•Ultrahigh-speed switching.
•Motor drive, DC / DC converter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID30 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 120 A
Allowable Power Dissipation PD2.0 W
Tc=25°C25W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=15A 13 22 S
Marking : K3703 Continued on next page.
N-Channl Silicon MOSFET
Ordering number : ENN7681
2SK3703
61504 TS IM T A-100813
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
General-Purpose Switching Device Applications
Package Dimensions
unit : mm
2063A
[2SK3703]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
1.6
1.2
0.75
14.0 16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2.4
123
2SK3703
No.7681-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=15A, VGS=10V 20 26 mΩ
RDS(on)2 ID=15A, VGS=4V 28 40 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 1780 pF
Output Capacitance Coss VDS=20V, f=1MHz 266 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 197 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 16.5 ns
Rise T ime trSee specified Test Circuit. 110 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 166 ns
Fall T ime tfSee specified Test Circuit. 144 ns
Total Gate Charge Qg VDS=30V, VGS=10V, ID=30A 40 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=30A 6.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=30A 11.5 nC
Diode Forward Voltage VSD IS=30A, VGS=0 1.0 1.2 V
Switching Time Test Circuit
PW=10µs
D.C.
≤
1%
P.G 50Ω
G
S
D
ID=15A
RL=2Ω
VDD=30V
VOUT
2SK3703
VIN
10V
0V
VIN
ID -- VDS
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
IT05386
0
50
45
40
35
30
25
20
15
10
5
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.01.6 1.8
ID -- VGS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
IT05387
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT05388
0
70
60
50
40
30
10
20
2345678910
RDS(on) -- Tc
Case Temperature, Tc -- °C
IT05389
0
60
50
40
30
20
10
--50 --25 0 25 50 75 100 125 150
0
50
45
40
35
30
25
20
15
10
5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5.04.0 4.5
Tc=25°C
Tc= --25°C
--25°C
Tc=75°C
75°C
25°C
25°C
--25°C
25°C
Tc=75°C
ID=15A
ID=15A, VGS=4V
ID=15A, VGS=10V
Static-Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static-Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
VGS=3V
4V
6V
8V
10V
VDS=10V
2SK3703
No.7681-3/4
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
IT05395
0.1
2
3
5
5
7
2
3
7
2
3
1.0
10
100
5
7
2
3
23 5723 57 23 57
0.1 1.0 10
Case Temperature, Tc -- °C
PD -- Tc
Allowable Power Dissipation, PD -- W
IT05396
0 20 40 60 80 100 120 140 160
0
35
30
25
20
15
10
5
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT05397
0 20 40 60 80 100 120 140 160
0
0.5
1.0
1.5
2.0
2.5
yfs
-- ID
Forward Transfer Admittance, yfs -- S
Drain Current, ID -- A IT05390
IF -- VSD
Forward Current, IF -- A
Diode Forward Voltage, VSD -- V IT05391
100
2
3
5
7
3
5
7
10
5
7
1.0
2
0.1 1.0
23 57 23 57 23
10 5 0 0.3 0.6 0.9 1.2
0.001
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
5
7
2
3
5
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Total Gate Charge, Qg -- nC IT05394
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40
VDS=30V
ID=30A
Tc= --25°C
25
°
C
75
°
C
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Drain-to-Source Voltage, VDS -- V IT05393
SW Time -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
IT05392
10
7
2
2
3
5
100
5
3
7532 101.00.1 5327532
tr
tf
td(on)
td(off)
VDD=30V
VGS=10V
IDP=120A
ID=30A
Operatuon in this
area is limited by RDS(on).
Tc=25°C
Single pulse
<10µs
<10µs
100µs
1ms
100ms
10ms
DC operation
VGS=0
Tc=75°C
25
°
C
--25
°
C
1000
100
2
3
5
7
7
2
3
5
0 5 10 15 20 25 30
Crss
Coss
Ciss
f=1MHz
2SK3703
No.7681-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2004. Specifications and information herein are subject
to change without notice.
PS
