BAV19WS thru BAV21WS Vishay Semiconductors New Product formerly General Semiconductor Small-Signal Diodes SOD-323 .012 (0.3) Mounting Pad Layout .065 (1.65) 0.047 (1.20) 0.062 (1.60) .006 (0.15) max. .004 (0.1) max. .059 (1.5) .043 (1.1) 0.055 (1.40) Dimensions in inches Top View and (millimeters) .049 (1.25) max. .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band .010 (0.25) min. Mechanical Data Features Case: SOD-323 Plastic Case Weight: approx. 0.004g Marking BAV19WS = A8 Code: BAV20WS = A9 BAV21WS = AA Packaging Codes/Options: D5/10K per 13" reel (8mm tape), 30K/box D6/3K per 7" reel (8mm tape), 30K/box * Silicon Epitaxial Planar Diodes * For general purpose * These diodes are also available in other case styles including: the DO-35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT-23 case with the type designation BAS19 - BAS21 and the SOD-123 case with the type designation BAV19W - BAV21W Maximum Ratings and Thermal Characteristics Parameter (TA = 25C unless otherwise noted) Symbol Value Unit BAV19WS BAV20WS BAV21WS VR 100 150 200 V BAV19WS BAV20WS BAV21WS VRRM 120 200 250 V IF 250(1) mA Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25C and f 50Hz IF(AV) 200(1) mA Repetitive Peak Forward Current at f 50Hz, = 180, Tamb = 25C IFRM 625(1) mA Surge Forward Current at t < 1s, Tj = 25C IFSM 1 A Power Dissipation at Tamb = 25C Ptot 200(1) mW Thermal Resistance Junction to Ambient Air RJA 650(1) C/W Continuous Reverse Voltage Repetitive Peak Reverse Voltage Forward DC Current at Tamb = 25C Junction Temperature Storage Temperature Range Tj TS (1) 150 C (1) -65 to +175 C Note: (1) Valid provided that leads are kept at ambient temperature. Document Number 88151 14-May-02 www.vishay.com 1 BAV19WS thru BAV21WS Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit VF IF = 100 mA IF = 200 mA -- -- -- -- 1.00 1.25 V IR VR = 100V VR = 100V, Tj = 100 C VR = 150V VR = 150V, Tj = 100 C VR = 200V VR = 200V, Tj = 100 C -- -- -- -- -- -- -- -- -- -- -- -- 100 15 100 15 100 15 nA A nA A nA A rf IF = 10 mA -- 5 -- Ctot VR = 0, f = 1 MHz -- -- 1.5 pF trr IF = 30 mA, IR = 30 mA Irr = 3 mA, RL = 100 -- -- 50 ns J Forward Voltage Leakage Current BAV19WS BAV19WS BAV20WS BAV20WS BAV21WS BAV21WS Dynamic Forward Resistance Capacitance Reverse Recovery Time Ratings and Characteristic Curves (T www.vishay.com 2 A = 25C unless otherwise noted) Document Number 88151 14-May-02 BAV19WS thru BAV21WS Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (T A = 25C unless otherwise noted) Document Number 88151 14-May-02 www.vishay.com 3