BAV19WS thru BAV21WS
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88151 www.vishay.com
14-May-02 1
New Product
Small-Signal Diodes
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Continuous Reverse Voltage BAV19WS 100
BAV20WS VR150 V
BAV21WS 200
Repetitive Peak Reverse Voltage BAV19WS 120
BAV20WS VRRM 200 V
BAV21WS 250
Forward DC Current at Tamb = 25°CI
F250(1) mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load IF(AV) 200(1) mA
at Tamb = 25°C and f ≥50Hz
Repetitive Peak Forward Current IFRM 625(1) mA
at f ≥50Hz, θ = 180°, Tamb = 25°C
Surge Forward Current at t < 1s, Tj= 25°CI
FSM 1A
Power Dissipation at Tamb = 25°CP
tot 200(1) mW
Thermal Resistance Junction to Ambient Air RθJA 650(1) °C/W
Junction Temperature Tj150(1) °C
Storage Temperature Range TS–65 to +175(1) °C
Note:
(1) Valid provided that leads are kept at ambient temperature.
.006 (0.15)
max.
.010 (0.25)
min.
.012 (0.3)
.076 (1.95)
.112 (2.85)
.059 (1.5)
.004 (0.1)
max.
.049 (1.25)
max.
Cathode Band
Top View
.100 (2.55)
.065 (1.65)
.043 (1.1)
Features
• Silicon Epitaxial Planar Diodes
• For general pur pose
• These diodes are also available in other case
styles including: the DO-35 case with the type
designation BAV19 - BAV21, the MiniMELF
case with the type designation BAV100 - BAV103,
the SOT-23 case with the type designation
BAS19 - BAS21 and the SOD-123 case with the
type designation BAV19W - BAV21W
SOD-323
Mechanical Data
Case: SOD-323 Plastic Case
Weight: approx. 0.004g
Marking BAV19WS = A8
Code: BAV20WS = A9
BAV21WS = AA
Packaging Codes/Options:
D5/10K per 13”reel (8mm tape), 30K/box
D6/3K per 7”reel (8mm tape), 30K/box
0.055
(1.40) 0.062
(1.60)
0.047 (1.20)
Mounting Pad Layout
Dimensions in inches
and (millimeters)
BAV19WS thru BAV21WS
Vishay Semiconductors
for mer ly General Semiconductor
www.vishay.com Document Number 88151
214-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
F orward Voltage VFIF = 100 mA ——1.00 V
IF = 200 mA ——1.25
BAV19WS VR = 100V ——100 nA
Leakage Current BAV19WS VR = 100V, Tj= 100 °C ——15 µA
BAV20WS IRVR = 150V ——100 nA
BAV20WS VR = 150V, Tj= 100 °C ——15 µA
BAV21WS VR = 200V ——100 nA
BAV21WS VR = 200V, Tj= 100 °C——15 µA
Dynamic Forward Resistance rfIF= 10 mA —5—Ω
Capacitance Ctot VR= 0, f = 1 MHz ——1.5 pF
Reverse Recover y Time trr IF= 30 mA, IR = 30 mA ——50 ns
Irr = 3 mA, RL= 100 Ω
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BAV19WS thru BAV21WS
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88151 www.vishay.com
14-May-02 3
Ω
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
