This is information on a product in full production.
April 2013 DocID022346 Rev 6 1/13
13
STGW60H65DRF
60 A, 650 V field stop trench gate IGBT with Ultrafast diode
Datasheet - production data
Figure 1. Internal schematic diagram
Features
Very high speed switching
Tight param et er s di st rib ut ion
Safe paralleling
Low thermal resistance
6 µs short-circuit withstand time
Ultrafast soft recovery antiparallel diode
Applications
Photovoltaic inv er te rs
Uninterruptible power supply
Welding
Power factor correction
High switching frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT is the result of a compromise
between conduction and switching losses,
maximizing the efficiency of high switching
frequency converters. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in easier
paralleling o peration.
TO-247
123
Table 1. Device su mmary
Order code Marking Package Packaging
STGW60H65DRF GW60H65DRF TO-247 Tube
www.st.com
Electrical ratings STGW60H65DRF
2/13 DocID022346 Rev 6
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0) 650 V
ICContinuous collector current at TC = 25 °C 120 A
ICContinuous collector current at TC = 100 °C 60 A
ICP (1)
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Pulsed collector current 240 A
VGE Gate-emitter voltage ±20 V
IFContinuous forward current at TC = 25 °C 120 A
Continuous forward current at TC = 100 °C 60
IFP(1) Pulsed forward current 240 A
PTOT Total dissi pation at TC = 25 °C 420 W
tSC Short-circuit withstand time at VCC = 400 V,
VGE = 15 V 6µs
TSTG Storage temperature range - 55 to 175 °C
TJOperating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case IGBT 0.35 °C/W
RthJC Thermal resistance junction-case diode 1.38 °C/W
RthJA Thermal resistance junction-ambient 50 °C/W
DocID022346 Rev 6 3/13
STGW60H65DRF Electrical characteristics
2 Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CES
Collector-emitter
breakdown voltage
(VGE = 0) IC = 2 mA 650 V
VCE(sat) Collector-emitter saturation
voltage
VGE = 15 V, IC = 60 A 1.9 2.4 V
VGE = 15 V, IC = 60 A
TJ = 125 °C 2.1
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 6.0 V
ICES Collector cut-of f current
(VGE = 0) VCE = 650 V 25 µA
IGES Gate-emitter leakage
current (VCE = 0) VGE = ± 20 V 250 nA
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0 -7150
275
140 -pF
pF
pF
QgTotal gate charge VCC = 400 V, IC = 60 A,
VGE = 15 V
-217-nC
Qge Gate-emitter charge - 67 - nC
Qgc Gate-collector charge - 97 - nC
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V -85
33
1800 -ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V
TJ = 125 °C -82
35
1680 -ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall ti me
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V -34
178
30 -ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall ti me
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V
TJ = 125 °C -45
205
70 -ns
ns
ns
Electrical charact eristics STGW60H65DRF
4/13 DocID022346 Rev 6
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditio ns Min. Typ. Max. Unit
Eon (1)
Eoff (2)
Ets
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 23. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C).
2. Turn-off losses include also the tail of the collector current.
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V -0.94
1.06
2.0 -mJ
mJ
mJ
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V
TJ = 125 °C -1.48
1.4
2.88 -mJ
mJ
mJ
Table 8. Collector-emitter diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
VFForward on-vo l tage IF = 60 A
IF = 60 A, TJ = 150 °C -3.7
2.2 4.8 V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 60 A, VR = 400 V,
di/dt = 1700 A/µs -19
200
15.5 -ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 60 A, VR = 400 V,
di/dt = 1630 A/µs
TJ = 125 °C -34
780
46 -ns
nC
A
DocID022346 Rev 6 5/13
STGW60H65DRF Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics (TJ = - 40 °C) Figure 3. Output characteristics (TJ = 25 °C)
Figure 4. Output characteristics (TJ = 150 °C) Figure 5. Transfer characteristics
Figure 6. VCE(SAT) vs. junction temperature Figure 7. VCE(SAT) vs. coll ec to r curre n t
AM11847v1
0
20
40
60
80
100
120
140
160
180
200
220
01234
IC(A)
VCE (V)
9V
11V
13V
VGE = 15V
VGE = 20V
AM11848v1
0
20
40
60
80
100
120
140
160
180
200
220
01234
IC(A)
VCE (V)
9V
11V
13V
VGE = 15V
VGE = 20V
AM11849v1
0
20
40
60
80
100
120
140
160
180
200
220
01234
IC(A)
VCE (V)
9V
11V
13V
VGE = 15V
VGE = 20V
AM11850v1
0
20
40
60
80
100
120
140
160
180
200
220
6 7 8 9 10 11 12 (V)
IC(A)
VGE
TJ= -40°C
TJ= 25°C
TJ= 150°C
VCE = 10V
AM11851v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125
VCE (V)
TJ(ºC)
IC= 120A
IC= 60A
IC= 30A
AM11852v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
30 40 50 60 70 80 90 100 110
VCE (V)
IC(A)
TJ= -40°C
TJ= 25°C
TJ= 150°C
VGE =15V
Electrical charact eristics STGW60H65DRF
6/13 DocID022346 Rev 6
Figure 8. Normalized VGE(th) vs. junction
temperature Figure 9. Gate charge vs. gate-emitter voltage
Figure 10. Capacitance variations (f = 1 MHz,
VGE = 0) Figure 11. Switching losses vs. collector
current
Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. temperature
AM11854v1
0
2
4
6
8
10
12
14
16
0 50 100 150 200
VGE (V)
Qg (nC)
AM11855v1
10
100
1000
10000
0.1 1 10
C (pF)
VCE (V)
C
res
Coes
Cies
AM12736v1
0
500
1000
1500
2000
2500
3000
3500
20 40 60 80 100
E (µJ)
IC(A)
VCC = 400 V, VGE = 15 V, RG = 10Ω
EON
EOFF
TJ = 25 °C
TJ = 125 °C
---
AM12737v1
1000
1500
2000
2500
3000
3500
010203040
E (µJ)
R
G
(Ω)
E
ON
E
OFF
V
CC
= 400V, V
GE
= 15V,
I
C
= 60A, T
J
= 125 °C
AM12738v1
800
900
1000
1100
1200
1300
1400
1500
1600
25 50 75 100 125
E (µJ)
TJ(°C)
EON
EOFF
VCC = 400V, VGE = 15V,
IC= 60 A, RG= 10Ω
DocID022346 Rev 6 7/13
STGW60H65DRF Electrical characteristics
Figure 14. Turn-OFF SOA Figure 15. Short circuit time & current vs. VGE
Figure 16. Diode forward curre nt vs. forward
voltage Figure 17. Diode forward current vs. junction
temperature
Figure 18. Reverse recovery current as a
function of diode current slope Figure 19. Reverse recovery time as a function
of diode current slope
AM11859v1
0.01
0.1
1
10
100
0.1 1 10 100
IC(A)
VCE (V)
VGE = 15 V, RG= 10Ω
TC= 150 °C
AM11860v1
50
150
250
350
2.5
5
7.5
10
12.5
15
17.5
20
9 101112131415
ISC (A)
tsc (μs)
VGE (V)
VCC = 400V, TC= 25°C
tSC
ISC
AM12739v1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10 15 20 25 30 35 40 45 50 55 60
VF(V)
IF(A)
Tj = - 40°C
Tj = 25°C
Tj = 150°C
AM12740v1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50 -25 0 25 50 75 100 125 150
VF(V)
TJ(°C)
IF = 15 A
IF = 30 A
IF = 60 A
AM12741v1
4
8
12
16
20
24
250 750 1250 1750
Irm (A)
di/dt (A/µs)
VCC = 400V, VGE = 15V, IC= 60A
TJ = 25°C
TJ = 125°C ---
AM12742v1
10
20
30
40
50
60
250 750 1250 1750
trr (ns)
di/dt (A/µs)
VCC = 400V, VGE = 15V, IC= 60A
TJ = 25°C
TJ = 125°C
---
Electrical charact eristics STGW60H65DRF
8/13 DocID022346 Rev 6
Figure 20. Reverse recovery charge as a
function of diode current slope Figure 21. Maximum normalized Zth junction to
case (IGBT)
Figure 22. Maximum normalized Zth junction to
case (Diode)
AM12743v1
50
150
250
350
450
550
650
250 750 1250 1750
Qrr (nC)
di/dt (A/µs)
VCC = 400V, VGE = 15V, IC= 60A
TJ = 25°C
TJ = 125°C
---
AM11861v1
1E-02
1E-01
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
K
t
P
(s)
Single
Puls e
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
DocID022346 Rev 6 9/13
STGW60H65DRF Test circuits
3 Test circuits
Figure 23. Test circuit for inductive load
switching Figure 24. Gate charge test circuit
Figure 25. Switching waveform Figure 26. Diode reco very time waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
trr
tatb
Qrr
IRRM
t
VF
dv/dt
Package mechanical data STGW60H65DRF
10/13 DocID022346 Rev 6
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packag es, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 9. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
P 3.55 3.65
R 4.50 5.50
S 5.30 5.50 5.70
DocID022346 Rev 6 11 /13
STGW60H65DRF Package mechanical data
Figure 27. TO-247 drawing
0075325_G
Revision history STGW60H65DRF
12/13 DocID022346 Rev 6
5 Revision history
Table 10. Document revision history
Date Revision Changes
11-Oct-2011 1 Initial release.
06-Jun-2012 2 Document status promoted from preliminary data production data.
Added: Section 2.1: Electrical characteristics (curves) on page 5.
19-Jun-2012 3 Updated parameters in Table 2.
26-Jul-2012 4 Updated parameters in Table 2.
21-Jan-2013 5 Modified VF test conditions, typ. and max values Table 8 on page 4.
02-Apr-2013 6 Modified:
–P
TOT value Table 2 on page 2.
–Eon and Ets typical values Table 7 on page 4.
DocID022346 Rev 6 13/13
STGW60H65DRF
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