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c 2012 ROHM Co., Ltd. All rights reserved. 2012.02 - Rev.D
Zener diode
UDZS10B
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Constant voltage control
Features
1) Compact, 2-pin mini-mold type for
high-density mounting. (UMD2)
2) High reliability .
3) Can be mounted automatically,
using chip mounter.
Structure
Construction
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
ROHM : UMD2
JEITA : SC-90/A
JEDEC : S0D-323
dot (year week factory)
EX. UDZS3.6 B
0.3±0.05
0.7±0.2
    0.1
0.1±0.1
    0.05
1.7±0.1
2.5±0.2
1.25±0.1
UMD2
2.1
0.8MIN.
0.9MIN.
4.0±0.1 2.0±0.05 φ1.55±0.05
1.40±0.1 4.0±0.1 φ1.05
2.75
3.5±0.05 1.75±0.1
8.0±0.2
0.3±0.1
1.0±0.1
2.8±0.1
Symbol Unit
PmW
Tj
Tstg
Topr
Limits
150
-55 to +150
200
Parameter
Juncti on t em peratur e
Storage tem peratur e
Power di ssipat i on
Operating temperature -55 t o +150
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c 2012 ROHM Co., Ltd. All rights reserved. 2012.02 - Rev.D
Data Sheet
UDZS10B
Electrical characteristics (Ta=25C)
Type No.
MIN. MAX. Iz(mA) MAX. Iz(mA) MAX. Iz(mA) MAX. VR(V)
UDZS 3.6B 3.600 3.845 5.0 100 5.0 1000 1.0 10.0 1.0
UDZS 3.9B 3.890 4.160 5.0 100 5.0 1000 1.0 5.0 1.0
UDZS 4. 3B 4.170 4.430 5.0 100 5.0 1000 1.0 5.0 1.0
UDZS 4. 7B 4.550 4.750 5.0 100 5.0 800 0.5 2.0 1.0
UDZS 5. 1B 4.980 5.200 5.0 80 5.0 500 0.5 2.0 1.5
UDZS 5. 6B 5.490 5.730 5.0 60 5.0 200 0.5 1.0 2.5
UDZS 6. 2B 6.060 6.330 5.0 60 5.0 100 0.5 1.0 3.0
UDZS 6. 8B 6.650 6.930 5.0 40 5.0 60 0.5 0.5 3.5
UDZS 7. 5B 7.280 7.600 5.0 30 5.0 60 0.5 0.5 4.0
UDZS 8. 2B 8.020 8.360 5.0 30 5.0 60 0.5 0.5 5.0
UDZS 9. 1B 8.850 9.230 5.0 30 5.0 60 0.5 0.5 6.0
UDZS 10B 9.770 10.210 5.0 30 5.0 60 0.5 0.1 7.0
UDZS 11B 10.760 11.220 5.0 30 5.0 60 0.5 0.1 8.0
UDZS 12B 11.740 12.240 5.0 30 5.0 80 0.5 0.1 9.0
UDZS 13B 12.910 13.490 5.0 37 5.0 80 0.5 0.1 10.0
UDZS 15B 14.340 14.980 5.0 42 5.0 80 0.5 0.1 11.0
UDZS 16B 15.850 16.510 5.0 50 5.0 80 0.5 0.1 12.0
UDZS 18B 17.560 18.350 5.0 65 5.0 80 0.5 0.1 13.0
UDZS 20B 19.520 20.390 5.0 85 5.0 100 0.5 0.1 15.0
UDZS 22B 21.540 22.470 5.0 100 5.0 100 0.5 0.1 17.0
UDZS 24B 23.720 24.780 5.0 120 5.0 120 0.5 0.1 19.0
UDZS 27B 26.190 27.530 5.0 150 5.0 150 0.5 0.1 21.0
UDZS 30B 29.190 30.690 5.0 200 5.0 200 0.5 0.1 23.0
UDZS 33B 32.150 33.790 5.0 250 5.0 250 0.5 0.1 25.0
UDZS 36B 35.070 36.870 5.0 300 5.0 300 0.5 0.1 27.0
()The zener voltage(Vz) is measur ed 40ms af ter power is su ppli ed.
()The operatin g r esistances(Zz,Zzk) are measured by superimposing a minute alternat ing cur rent
on the regulated current(Iz)
TYP. Reverse current
IR(uA)
Operating resistance Zz()Risin g operataing
resistance Zz()
Symbol
Zener voltage Vz(V)
TYPE TYPE NO. TYPE TYPE NO.
UDZS 3.6B 62 UDZS 12B 25
UDZS 3.9B 72 UDZS 13B 35
UDZS 4.3B 82 UDZS 15B 45
UDZS 4.7B 92 UDZS 16B 55
UDZS 5.1B A2 UDZS 18B 65
UDZS 5.6B C2 UDZS 20B 75
UDZS 6.2B E2 UDZS 22B 85
UDZS 6.8B F2 UDZS 24B 95
UDZS 7.5B H2 UDZS 27B A5
UDZS 8.2B J2 UDZS 30B C5
UDZS 9.1B L2 UDZS 33B E5
UDZS 10B 05 UDZS 36B F5
UDZS 11B 15   
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c 2012 ROHM Co., Ltd. All rights reserved. 2012.02 - Rev.D
Data Sheet
UDZS10B
POWER DISSIPATION:Pd(mW)
TIME:t(ms)
PRSM-TIME CHARACTERISTICS
TEMP.COEFFICIENCE:γz(%/℃)
ZENER VOLTAGE:Vz(V)
γz-Vz CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
REVERSE SURGE MAXIMUM
POWER:PRSM(W)
0.1
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA IF=100mA
300us
time
Mounted on epoxy board
0
50
100
150
200
250
0 25 50 75 100 125 150
0.1
1
10
100
1000
10000
0.001 0.01 0.1 1 10 100
t
PRSM
0.001
0.01
0.1
1
10
0 5 10 15 20 25 30 35 40
3.6
24
20
18
16
15
13
121110
9.1
8.2
7.5
5.6
6.8
6.2
5.1
4.7
4.3
3.9
36
33
22 30
27
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
-0.08
-0.06
-0.04
-0.02
0
0.02
0.04
0.06
0.08
0.1
0.12
0 10203040
-5
0
5
10
15
20
25
30
35
40
AMBIENT TEMPERATURE:Ta(℃)
Pd-Ta CHARACTERISTICS
TEMP.COEFFICIENCE:γz(mV/℃)
Electrical characteristic curves (Ta=25C)
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c 2012 ROHM Co., Ltd. All rights reserved. 2012.02 - Rev.D
Data Sheet
UDZS10B
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
REVERSE CURRENT:IR (nA)REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ct DISPERSION MAP
CAPACITANCE
BETWEENTERMINALS:Ct(pF)
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
DYNAMIC IMPEDANCE:Zz(Ω)
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
Vz DISPER SION MAP
ZENER VOLTAGE:Vz(V)
0.001
0.01
0.1
1
10
100
1000
0123 4567
Ta=25℃
Ta=-25℃
Ta=75℃
Ta=125℃
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Ta=25℃
VR=7.0V
n=30pcs
AVE:0.128nA
1
10
100
0246810
f=1MHz
10
11
12
13
14
15
16
17
18
19
20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:19.35p
0.001
0.01
0.1
1
10
8 9 10 11
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
1
10
100
1000
0.1110
9.7
9.8
9.9
10
10.1
10.2
AVE:9.994V
Ta=25℃
IZ=5mA
n=30pcs
R1120A
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© 2012 ROHM Co., Ltd. All rights reserved.
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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