T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Applications * * * * * * Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features * * * * * Functional Block Diagram Frequency: DC to 3.5 GHz Output Power (P3dB): 64 W at 3.3 GHz Linear Gain: 16 dB at 3.3 GHz Operating Voltage: 28 V Low thermal resistance package General Description Pin Configuration The TriQuint T2G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Pin No. Label 1 2 Flange VD / RF OUT VG / RF IN Source Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Datasheet: Rev B 06-12-14 (c) 2014 TriQuint Part ECCN Description T2G4005528-FS EAR99 Packaged part Flangeless T2G4005528-FSEAR99 EVB1 3.0-3.5 GHz Evaluation Board T2G405528-FSEVB2 1.0 - 1.4 GHz Evaluation Board - 1 of 13 - EAR99 Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Absolute Maximum Ratings(1) Recommended Operating Conditions Parameter Parameter Breakdown Voltage (BVDG) Drain Gate Voltage (VDG) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PD) Value 100 V (Min.)(2) 40 V -7 to 0 V 20 A -20 to 56 mA 90 W RF Input Power, CW, T = 25C (PIN) 43 dBm Channel Temperature (TCH) 275 C Mounting Temperature (30 Seconds) 320 C Storage Temperature 1. 2. Value Drain Voltage (VD) Drain Quiescent Current (IDQ) Peak Drain Current ( ID) Gate Voltage (VG) Channel Temperature (TCH) Power Dissipation, CW (PD) Power Dissipation, Pulse (PD) 28 V (Typ.) 200 mA (Typ.) 4.0 A (Typ.) -2.95 V (Typ.) 225 C (Max) 66 (Max) 70 (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Established at Vgs = -8V and Idq = 20mA RF Characterization - Load Pull Performance at 3.0 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 200 mA Symbol Parameter GLIN P3dB DE3dB PAE3dB G3dB Min Linear Gain Output Power at 3 dB Gain Compression Drain Efficiency at 3 dB Gain Compression Power-Added Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Typical Max 16.8 66.0 61.0 58.4 13.8 Units dB W % % dB Notes: 1. VDS = 28 V, IDQ = 200 mA; Pulse: 100s, 20% RF Characterization - Load Pull Performance at 3.5 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 200 mA Symbol Parameter GLIN P3dB DE3dB PAE3dB G3dB Min Linear Gain Output Power at 3 dB Gain Compression Drain Efficiency at 3 dB Gain Compression Power-Added Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Typical 16.7 64.5 59.2 56.7 13.7 Max Units dB W % % dB Notes: 1. VDS = 28 V, IDQ = 200 mA; Pulse: 100s, 20% Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 2 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor RF Characterization - Performance at 3.3 GHz (1, 2) Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 300 mA Symbol Parameter GLIN P3dB DE3dB PAE3dB G3dB Vg Linear Gain Output Power at 3 dB Gain Compression Drain Efficiency at 3 dB Gain Compression Power-Added Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Gate voltage Min Typical Max Units 14.0 55.0 50.0 45.0 11.0 -3.2 16.0 62.5 52.0 49.0 13.0 -2.9 -2.5 dB W % % dB V Min Typical Max Units 4 mA Notes: 1. Performance at 3.3 GHz in the 3.0 to 3.5 GHz Evaluation Board 2. VDS = 28 V, IDQ = 200 mA; Pulse: 100s, 20% Gate Leakage Test conditions unless otherwise noted: TA = 25 C, VGS = -5 V, VDS = 28V Symbol Parameter IG-leak Leakage Gate Current RF Characterization - Mismatched Ruggedness at 3.50 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 200 mA Symbol Parameter VSWR Typical Impedance Mismatch Ruggedness 10:1 Notes: 1. VDS = 28 V, IDQ = 200 mA, CW at P1dB Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 3 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Thermal and Reliability Information Parameter Test Conditions Thermal Resistance (JC) Channel Temperature (TCH) DC at 85 C Case Value Units 2.1 225 C/W C Notes: Thermal resistance measured to bottom of package Median Lifetime Maximum Channel Temperature TBASE = 85C, PD = 70 W Maximum Channel Temperature (oC) 240.0 Max. Channel Temperature vs. Pulse Width 220.0 200.0 180.0 160.0 140.0 5% Duty Cycle 10% Duty Cycle 120.0 25% Duty Cycle 50% Duty Cycle 100.0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Pulse Width (sec) Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 4 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 200 mA 2. Test Signal: Pulse Width = 100 sec, Duty Cycle = 20% Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 5 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Typical Performance Performance is based on compromised impedance point and measured at DUT reference plane. T2G4005528-FS Gain DrEff. and PAE vs. Pout 80 17 70 16 60 15 ZS = 3.24 - j5.19 50 14 ZL = 4.01 - j1.35 40 13 30 Gain DrEff. PAE 12 11 10 32 34 36 38 40 42 44 46 20 DrEff. & PAE [%] Gain [dB] 3000 MHz, 100 usec 20%, Vds = 28V, Idq = 200 mA 18 10 48 0 50 Pout [dBm] T2G4005528-FS Gain DrEff. and PAE vs. Pout 80 17 70 16 60 15 14 50 ZS = 6.09 - j5.43 40 ZL = 2.63 - j2.67 13 30 Gain DrEff. PAE 12 11 10 32 34 36 38 40 42 44 46 20 DrEff. & PAE [%] Gain [dB] 3500 MHz, 100 usec 20%, Vds = 28V, Idq = 200 mA 18 10 48 0 50 Pout [dBm] Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 6 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Performance Over Temperature (1, 2) Performance measured in TriQuint's 3.0 GHz to 3.5 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 300 mA 2. Test Signal: Pulse Width = 100 s, Duty Cycle = 20% Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 7 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Evaluation Board Performance (1, 2) Performance at 3 dB Compression Notes: 1. Test Conditions: VDS = 28 V, IDQ = 300 mA 2. Test Signal: Pulse Width = 100 s, Duty Cycle = 20 % Application Circuit Bias-up Procedure Bias-down Procedure Set gate voltage (VG) to -5.0V Set drain voltage (VD) to 28 V Turn off RF signal Slowly increase VG until quiescent ID is 200 mA. Turn off VD and wait 1 second to allow drain capacitor dissipation Apply RF signal Turn off VG Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 8 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Evaluation Board Layout Top RF layer is 0.025" thick Rogers RO3210, r = 10.2. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number C1, C7 C2, C8 C3, C9 C4, C10 C5, C11 C6, C12 L1, L2 R1 C13 47 pF 82 pF 2200 pF 22000 pF 1 uF 470 uF 12.5 nH 2.4 Ohm 2400 pF 2 2 2 2 2 2 2 1 1 ATC ATC Vitramon Vitramon Allied Illinois Cap Coilcraft Vishay Dale Dielectric Labs 100A470JW 100B820JW VJ1206Y222KRA 48C4641 213-0366 477KXM035M A04T_JL CRCW25122R40JNEG C08BL242X-5UN-X0B Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 9 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Pin Layout Note: The T2G4005528-FS will be marked with the "5528FS2" designator and a lot code marked below the part designator. The "YY" represents the last two digits of the calendar year the part was manufactured, the "WW" is the work week of the assembly lot start, the "MXXX" is the production lot number, and the "ZZZ" is an auto-generated serial number. Pin Description Pin Symbol Description 1 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an example. 2 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an example. 3 Flange Source connected to ground; see EVB Layout on page 9 as an example. Notes: Thermal resistance measured to bottom of package Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 10 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Mechanical Information All dimensions are in millimeters. Note: This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and tin-lead (maximum 245C reflow temperature) soldering processes. Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 11 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528 T2G4005528-FS 55W,, 28V DC - 3.5 GHz, GaN RF Power Transistor Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive ESD Sensitive Device Solderability Compatible with the latest version of J-STD J STD-020, Lead free solder, 260 C RoHs Compliance ESD Rating: Value: Test: Standard: Class 1A Passes 250 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 JESD22 A114 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) MSL Rating * Antimony Free * TBBP-A A (C15H12Br402) Free Level 3 at +260 C convection reflow * PFOS Free The part is rated Moisture Sensitivity Level 3 at 260C per * SVHC Free JEDEC standard IPC/JEDEC J-STD-020. J ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile Datasheet: Rev B 06-12-14 06 (c) 2014 TriQuint - 12 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4005528-FS 55W, 28V DC - 3.5 GHz, GaN RF Power Transistor Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@triquint.com Tel: Fax: For technical questions and application information: +1.972.994.8465 +1.972.994.8504 Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev B 06-12-14 (c) 2014 TriQuint - 13 of 13 - Disclaimer: Subject to change without notice www.triquint.com