T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 1 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Applications
•
Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
•
Frequency: DC to 3.5 GHz
• Output Power (P
3dB
): 64 W at 3.3 GHz
• Linear Gain: 16 dB at 3.3 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
Functional Block Diagram
Pin Configuration
Pin No. Label
1 V
D
/ RF OUT
2 V
G
/ RF IN
Flange Source
General Description
The TriQuint T2G4005528-FS is a 55 W (P
3dB
) discrete
GaN on SiC HEMT which operates from DC to 3.5 GHz.
The device is constructed with TriQuint’s
proven
TQGaN25 production
process, which features advanced
field plate techniques to optimize power and efficiency at
high drain bias operating conditions. This optimization
can potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Ordering Information
Part ECCN Description
T2G4005528-FS
EAR99
Packaged part
Flangeless
T2G4005528-FS-
EVB1 EAR99 3.0-3.5 GHz
Evaluation Board
T2G405528-FS-
EVB2 EAR99 1.0 – 1.4 GHz
Evaluation Board
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 2 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Absolute Maximum Ratings
(1)
Parameter Value
Breakdown Voltage (BV
DG
) 100 V (Min.)
(2
)
Drain Gate Voltage (V
DG
) 40 V
Gate Voltage Range (V
G
) -7 to 0 V
Drain Current (I
D
) 20 A
Gate Current (I
G
) -20 to 56 mA
Power Dissipation (P
D
) 90 W
RF Input Power, CW,
T = 25°C (P
IN
) 43 dBm
Channel Temperature (T
CH
) 275 °C
Mounting Temperature
(30 Seconds) 320 °C
Storage Temperature -40 to 150 °C
1.
Operation of this device outside the parameter ranges
given above may cause permanent damage. These
are stress ratings only, and functional operation of the
device at these conditions is not implied.
2. Established at Vgs = -8V and Idq = 20mA
Recommended Operating Conditions
Parameter Value
Drain Voltage (V
D
) 28 V (Typ.)
Drain Quiescent Current (I
DQ
) 200 mA (Typ.)
Peak Drain Current ( I
D
) 4.0 A (Typ.)
Gate Voltage (V
G
) -2.95 V (Typ.)
Channel Temperature (T
CH
) 225 °C (Max)
Power Dissipation, CW (P
D
) 66 (Max)
Power Dissipation, Pulse (P
D
) 70 (Max)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
RF Characterization – Load Pull Performance at 3.5 GHz
(1)
Test conditions unless otherwise noted: T
= 25 °C, V
D
= 28 V, I
DQ
= 200 mA
Symbol Parameter Min Typical Max Units
G
LIN
Linear Gain 16.7 dB
P
3dB
Output Power at 3 dB Gain Compression 64.5 W
DE
3dB
Drain Efficiency at 3 dB Gain Compression 59.2 %
PAE
3dB
Power-Added Efficiency at 3 dB Gain
Compression
56.7 %
G
3dB
Gain at 3 dB Compression
13.7 dB
Notes:
1. V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.0 GHz
(1)
Test conditions unless otherwise noted: T
= 25 °C, V
D
= 28 V, I
DQ
= 200 mA
Symbol Parameter Min Typical Max Units
G
LIN
Linear Gain 16.8 dB
P
3dB
Output Power at 3 dB Gain Compression 66.0 W
DE
3dB
Drain Efficiency at 3 dB Gain Compression 61.0 %
PAE
3dB
Power-Added Efficiency at 3 dB Gain
Compression
58.4 %
G
3dB
Gain at 3 dB Compression
13.8 dB
Notes:
1. V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100µs, 20%
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 3 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Gate Leakage
Test conditions unless otherwise noted: T
= 25 °C, V
GS
= -5 V, V
D
S
= 28V
Symbol Parameter Min Typical Max Units
I
G-leak
Leakage Gate Current
4 mA
RF Characterization – Performance at 3.3 GHz
(1, 2)
Test conditions unless otherwise noted: T
= 25 °C, V
D
= 28 V, I
DQ
= 300 mA
Symbol Parameter Min Typical Max Units
G
LIN
Linear Gain 14.0 16.0 dB
P
3dB
Output Power at 3 dB Gain Compression 55.0 62.5 W
DE
3dB
Drain Efficiency at 3 dB Gain Compression 50.0 52.0 %
PAE
3dB
Power-Added Efficiency at 3 dB Gain
Compression
45.0 49.0 %
G
3dB
Gain at 3 dB Compression
11.0 13.0 dB
Vg Gate voltage -3.2 -2.9 -2.5 V
Notes:
1. Performance at 3.3 GHz in the 3.0 to 3.5 GHz Evaluation Board
2. V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100µs, 20%
RF Characterization – Mismatched Ruggedness at 3.50 GHz
(1)
Test conditions unless otherwise noted: T
= 25 °C, V
D
= 28 V, I
DQ
= 200 mA
Symbol Parameter Typical
VSWR Impedance Mismatch Ruggedness 10:1
Notes:
1. V
DS
= 28 V, I
DQ
= 200 mA, CW at P
1dB
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 4 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Thermal and Reliability Information
Parameter Test Conditions Value Units
Thermal Resistance (θ
JC
) DC at 85 °C Case 2.1 ºC/W
Channel Temperature (T
CH
) 225 °C
Notes:
Thermal resistance measured to bottom of package
Median Lifetime
Maximum Channel Temperature
T
BASE
= 85°C, P
D
= 70 W
100.0
120.0
140.0
160.0
180.0
200.0
220.0
240.0
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
Maximum Channel Temperature (oC)
Pulse Width (sec)
Max. Channel Temperature vs. Pulse Width
5% Duty Cycle
10% Duty Cycle
25% Duty Cycle
50% Duty Cycle
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 5 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Load Pull Smith Charts
(1, 2)
RF performance that
the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-
pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: V
DS
= 28 V, I
DQ
= 200 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 6 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference plane.
32 34 36 38 40 42 44 46 48 50
10
11
12
13
14
15
16
17
18
32 34 36 38 40 42 44 46 48 50
0
10
20
30
40
50
60
70
80
32 34 36 38 40 42 44 46 48 50
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T2G4005528-FS Gain DrEff. and PAE vs. Pout
3000 MHz, 100 usec 20%, Vds = 28V, Idq = 200 mA
Gain
DrEff.
PAE
ZS = 3.24 - j5.19 Ω
ZL = 4.01 - j1.35 Ω
32 34 36 38 40 42 44 46 48 50
10
11
12
13
14
15
16
17
18
32 34 36 38 40 42 44 46 48 50
0
10
20
30
40
50
60
70
80
32 34 36 38 40 42 44 46 48 50
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T2G4005528-FS Gain DrEff. and PAE vs. Pout
3500 MHz, 100 usec 20%, Vds = 28V, Idq = 200 mA
Gain
DrEff.
PAE
ZS = 6.09 - j5.43 Ω
ZL = 2.63 - j2.67 Ω
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 7 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Performance Over Temperature
(1, 2)
Performance measured in TriQuint’s 3.0 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: V
DS
= 28 V, I
DQ
= 300 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 8 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Evaluation Board Performance
(1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: V
DS
= 28 V, I
DQ
= 300 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Application Circuit
Bias-up Procedure
Set gate voltage (V
G
) to -5.0V
Set drain voltage (V
D
) to 28 V
Slowly increase V
G
until quiescent I
D
is 200 mA.
Apply RF signal
Bias-down Procedure
Turn off RF signal
Turn off V
D
and wait 1 second to allow drain capacitor
dissipation
Turn off V
G
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 9 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Evaluation Board Layout
Top RF layer is 0.025” thick Rogers RO3210, ɛ
r
= 10.2. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
Value Qty Manufacturer Part Number
C1, C7 47 pF 2 ATC 100A470JW
C2, C8 82 pF 2 ATC 100B820JW
C3, C9 2200 pF 2 Vitramon VJ1206Y222KRA
C4, C10 22000 pF 2 Vitramon 48C4641
C5, C11 1 uF 2 Allied 213-0366
C6, C12 470 uF 2 Illinois Cap 477KXM035M
L1, L2 12.5 nH 2 Coilcraft A04T_JL
R1 2.4 Ohm 1 Vishay Dale CRCW25122R40JNEG
C13 2400 pF 1 Dielectric Labs C08BL242X-5UN-X0B
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 10 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Pin Layout
Note:
The T2G4005528-FS will be marked with the “5528FS2” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
Pin Description
Pin Symbol Description
1 V
D
/ RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an
example.
2 V
G
/ RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an
example.
3 Flange Source connected to ground; see EVB Layout on page 9 as an example.
Notes:
Thermal resistance measured to bottom of package
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 11 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Mechanical Information
All dimensions are in millimeters.
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev
© 2014
Product Compliance
ESD Sensitivity Ratings
ESD Rating:
Value:
Test:
Standard:
MSL Rating
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J
ECCN
US Department of Commerce
Recommended Soldering Temperature Profile
Datasheet: Rev
B 06
© 2014
TriQuint
Product Compliance
ESD Sensitivity Ratings
Caution! ESD
ESD Rating:
Class 1A
Value:
Passes
Test:
Human Body Model (HBM)
Standard:
JEDEC Standard JESD22
MSL Rating
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J
ECCN
US Department of Commerce
Recommended Soldering Temperature Profile
B 06
-12-14
Product Compliance
ESD Sensitivity Ratings
Caution! ESD
-
Sensitive Device
Class 1A
Passes
≥
250 V min.
Human Body Model (HBM)
JEDEC Standard JESD22
MSL Rating
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J
US Department of Commerce
Recommended Soldering Temperature Profile
Product Compliance
Information
ESD Sensitivity Ratings
Sensitive Device
250 V min.
Human Body Model (HBM)
JEDEC Standard JESD22
-
A114
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J
-STD-020.
US Department of Commerce
EAR99
Recommended Soldering Temperature Profile
55W
, 28V DC
Information
Sensitive Device
A114
The part is rated Moisture Sensitivity Level 3 at 260°C per
Recommended Soldering Temperature Profile
, 28V DC
–
3.5 GHz, GaN RF Power
- 12 of 13 -
Solderability
Compatible with the latest
free solder, 260° C
RoHs Compliance
This part
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
•
•
•
•
•
•
The part is rated Moisture Sensitivity Level 3 at 260°C per
Recommended Soldering Temperature Profile
3.5 GHz, GaN RF Power
Solderability
Compatible with the latest
free solder, 260° C
RoHs Compliance
This part
is
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
•
Lead Free
•
Halogen Free (Chlorine, Bromine)
•
Antimony Free
•
TBBP-
A (C
•
PFOS Free
•
SVHC Free
Recommended Soldering Temperature Profile
T2G4005528
3.5 GHz, GaN RF Power
Disclaimer: Subject to change without notice
Solderability
Compatible with the latest
version of J
free solder, 260° C
RoHs Compliance
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
A (C
15
H
12
Br
4
0
2
) Free
PFOS Free
SVHC Free
T2G4005528
3.5 GHz, GaN RF Power
Transistor
Disclaimer: Subject to change without notice
www.triquint.com
version of J
-
STD
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Halogen Free (Chlorine, Bromine)
) Free
T2G4005528
-FS
Transistor
Disclaimer: Subject to change without notice
www.triquint.com
STD
-
020, Lead
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 06-12-14
- 13 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com Tel: +1.972.994.8465
Email: info-sales@triquint.com Fax: +1.972.994.8504
For technical questions and application information: Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable.
TriQuint makes no warranties regarding the information
contained herein.
TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein.
The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user.
All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does
not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.