IS733 A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 approval pending l Dimensions in mm 2.54 7.62 max. EN60950 approval pending 8.3 max. DESCRIPTION The IS733 optically coupled isolator consists of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. 5.1 max. 0.5 min. 3.9 3.1 0.48 0.25 15 Max ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l AC or polarity insensitive input l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Telephone sets, Telephone exchangers l Signal transmission between systems of different potentials and impedances OPTION SM 10.2 9.5 1.4 0.9 8.3 max 0.26 Forward Current Peak Forward Current Power Dissipation 50mA 1A 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Emitter-base Voltage BVEBO Power Dissipation 35V 35V 6V 6V 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.27mW/C above 25C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 19/4/99 INPUT DIODE OPTION G SURFACE MOUNT 1.2 0.6 Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91060-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER MIN TYP MAX UNITS Input Forward Voltage (VF) Output Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (note 2 ) 15 Coupled 1.2 V IF = 20mA 35 V IC = 1mA 35 6 6 100 V V V nA IC = 100A IE = 100A IE = 100A VCE = 20V 300 % 1mAIF , 5V VCE 0.2 V 20mAIF , 1mAIC VRMS VPK See note 1 See note 1 VIO = 500V (note 1) s s VCE = 2V , IC= 2mA, RL = 100 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Output Rise Time Output Fall Time Note 1 Note 2 19/4/99 tr tf 1.4 TEST CONDITION 5300 7500 5x1010 4 3 18 18 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91060-AAS/A1 Collector Power Dissipation vs. Ambient Temperature 100 50 0 -30 0 25 50 75 100 125 TA = 25C Ic 5 8mA 6 5mA =1mA 2mA 3mA (V) 150 Collector-emitter saturation voltage V CE(SAT) 200 Collector power dissipation P C (mW) Collector-emitter Saturation Voltage vs. Forward Current 4 3 2 1 0 0 5 10 Forward current IF (mA) Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 60 TA = 25C 50 Collector current I C (mA) Forward current I F (mA) 50 40 30 20 10 0 50 30 40 20 30 15 20 10 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) (V) 4 6 8 10 Current Transfer Ratio vs. Forward Current 320 0.14 280 0.12 Current transfer ratio CTR (%) CE(SAT) Collector-emitter saturation voltage V 2 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature IF = 20mA IC = 1mA 0.10 0.08 0.06 0.04 0.02 240 200 160 120 80 VCE = 5V TA = 25C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( C ) 19/4/99 15 100 1 2 5 10 20 50 Forward current IF (mA) DB91060-AAS/A1