NJW0281G (NPN) NJW0302G (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. Features *Exceptional Safe Operating Area *NPN/PNP Gain Matching within 10% from 50 mA to 3 A *Excellent Gain Linearity *High BVCEO *High Frequency *These are Pb-Free Devices http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS MARKING DIAGRAM NJWxxxG AYWW Benefits *Reliable Performance at Higher Powers *Symmetrical Characteristics in Complementary Configurations *Accurate Reproduction of Input Signal *Greater Dynamic Range *High Amplifier Bandwith Applications xxxx G A Y WW *High-End Consumer Audio Products Home Home Amplifiers Receivers *Professional Audio Amplifiers Theater and Stadium Sound Systems Public Address Systems (PAs) Symbol Value Unit Collector-Emitter Voltage VCEO 250 Vdc Collector-Base Voltage VCBO 250 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector-Emitter Voltage - 1.5 V VCEX 250 Vdc Collector Current - Continuous Collector Current - Peak (Note 1) IC 15 30 Adc Base Current - Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25C PD 150 Watts TJ, Tstg - 65 to +150 C Operating and Storage Junction Temperature Range = 0281 or 0302 = Pb-Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION MAXIMUM RATINGS Rating TO-3P CASE 340AB Device Package Shipping NJW0281G TO-3P (Pb-Free) 30 Units/Rail NJW0302G TO-3P (Pb-Free) 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. (c) Semiconductor Components Industries, LLC, 2008 January, 2008 - Rev. 0 1 Publication Order Number: NJW0281/D NJW0281G (NPN) NJW0302G (PNP) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Symbol Value Unit RJC 0.83 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 250 - V Collector Cutoff Current (VCB = 250 V, IE = 0) ICBO - 10 mA Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO - 5.0 mA 75 75 75 150 150 150 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mA, IB = 0) ON CHARACTERISTICS hFE DC Current Gain (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) (IC = 3.0 A, VCE = 5.0 V) - Collector-Emitter Saturation Voltage (IC = 5.0 A, IB = 0.5 A) VCE(sat) - 1.0 V Base-Emitter On Voltage (IC = 5.0 A, VCE = 5.0 V) VBE(on) - 1.2 V fT 30 - MHz Cob - 400 pF DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz) Output Capacitance (VCB = 10 V, IE = 0, ftest = 1.0 MHz) 100 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 160 140 120 100 80 60 40 20 0 1.0 ms 10 5.0 ms 10 ms 100 ms 1 DC 0.1 0.01 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 1 160 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Power Derating Figure 2. Safe Operating Area http://onsemi.com 2 1000 NJW0281G (NPN) NJW0302G (PNP) 500 500 hFE, DC CURRENT GAIN VCE = 5.0 V 100C 100 -25C 25C 10 0.05 0.1 1 10 VBE(on), BASE-EMITTER VOLTAGE (V) -25C 25C 1 10 IC, COLLECTOR CURRENT (A) Figure 3. NJW0281G DC Current Gain Figure 4. NJW0302G DC Current Gain VCE = 5.0 V 1.2 1 -25C 0.8 25C 100C 0.4 0.2 0 0.01 0.1 1 10 100 50 2.4 VCE = 5.0 V 1.9 1.4 0.9 -25C 100C 0.4 25C -0.1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. NJW0281G Base-Emitter Voltage Figure 6. NJW0302G Base-Emitter Voltage 100 10 10 IC/IB= 10 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 100 IC, COLLECTOR CURRENT (A) 1.4 0.6 100C 10 0.05 0.1 50 VBE(on), BASE-EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 5.0 V 1 100C 25C 0.1 0.01 0.01 -25C 0.1 1 10 100 IC/IB= 10 1 100C 0.1 0.01 0.01 25C -25C IC, COLLECTOR CURRENT (A) 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 7. NJW0281G Saturation Voltage Figure 8. NJW0302G Saturation Voltage http://onsemi.com 3 100 NJW0281G (NPN) NJW0302G (PNP) 70 VCE= 5.0 V fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 60 50 40 30 20 25C 10 0 0.01 0.1 1 10 60 VCE= 5.0 V 50 40 30 20 25C 10 0 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 9. NJW0281G Current Gain Bandwidth Product Figure 10. NJW0302G Current Gain Bandwidth Product http://onsemi.com 4 NJW0281G (NPN) NJW0302G (PNP) PACKAGE DIMENSIONS TO-3P-3LD CASE 340AB-01 ISSUE A A B B C Q 4 SEATING PLANE U E A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. L (3) P K 1 2 3 3X D 0.25 G M A B S H J F W G DIM A B C D E F G H J K L P Q U W MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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