© Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 0
1Publication Order Number:
NJW0281/D
NJW0281G (NPN)
NJW0302G (PNP)
Preferred Devices
Complementary NPN-PNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular NJW3281G and NJW1302G audio output transistors. With
superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and
other linear applications.
Features
•Exceptional Safe Operating Area
•NPN/PNP Gain Matching within 10% from 50 mA to 3 A
•Excellent Gain Linearity
•High BVCEO
•High Frequency
•These are Pb-Free Devices
Benefits
•Reliable Performance at Higher Powers
•Symmetrical Characteristics in Complementary Configurations
•Accurate Reproduction of Input Signal
•Greater Dynamic Range
•High Amplifier Bandwith
Applications
•High-End Consumer Audio Products
♦Home Amplifiers
♦Home Receivers
•Professional Audio Amplifiers
♦Theater and Stadium Sound Systems
♦Public Address Systems (PAs)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 250 Vdc
Collector-Base Voltage VCBO 250 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector-Emitter Voltage - 1.5 V VCEX 250 Vdc
Collector Current - Continuous
Collector Current - Peak (Note 1)
IC15
30
Adc
Base Current - Continuous IB1.5 Adc
Total Power Dissipation @ TC = 25°C PD150 Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg -āā 65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 150 WATTS
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Device Package Shipping
ORDERING INFORMATION
TO-3P
CASE 340AB
MARKING
DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
NJW0302G TO-3P
(Pb-Free)
30 Units/Rail
NJW0281G TO-3P
(Pb-Free)
30 Units/Rail
xxxx = 0281 or 0302
G = Pb-Free Package
A = Assembly Location
Y = Year
WW = Work Week
NJWxxxG
AYWW
NJW0281G (NPN) NJW0302G (PNP)
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction-to-Case RθJC 0.83 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
VCEO(sus) 250 - V
Collector Cutoff Current
(VCB = 250 V, IE = 0)
ICBO - 10 mA
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO - 5.0 mA
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
(IC = 3.0 A, VCE = 5.0 V)
hFE
75
75
75
150
150
150
-
Collector-Emitter Saturation Voltage
(IC = 5.0 A, IB = 0.5 A)
VCE(sat) - 1.0 V
Base-Emitter On Voltage
(IC = 5.0 A, VCE = 5.0 V)
VBE(on) - 1.2 V
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz)
fT30 - MHz
Output Capacitance
(VCB = 10 V, IE = 0, ftest = 1.0 MHz)
Cob - 400 pF
160
0
TC, CASE TEMPERATURE (°C)
40 60 100 120 16080 14020
Figure 1. Power Derating
0
20
40
60
80
100
140
120
PD, POWER DISSIPATION (W)
0.01
0.1
1
10
100
1 10 100 1000
1.0 ms
10 ms
5.0 ms
100 ms
DC
VCE, COLLECTOR-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 2. Safe Operating Area
NJW0281G (NPN) NJW0302G (PNP)
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3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (A)
Figure 3. NJW0281G DC Current Gain
100°C
-25°C
25°C
Figure 4. NJW0302G DC Current Gain
VCE = 5.0 V
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
Figure 5. NJW0281G Base-Emitter Voltage
IC, COLLECTOR CURRENT (A)
0.01 0.1 1 10 100
Figure 6. NJW0302G Base-Emitter Voltage
VBE(on), BASE-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VCE = 5.0 V
25°C
-25°C
100°C
VBE(on), BASE-EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN
10
100
500
0.05 0.1 1 10 50
100°C
-25°C25°C
VCE = 5.0 V
-0.1
0.4
0.9
1.4
1.9
2.4
10
100
500
0.05 0.1 1 10 50
100°C
-25°C
25°C
VCE = 5.0 V
Figure 7. NJW0281G Saturation Voltage
0.01
0.1
1
10
0.01 0.1 1 10 100
IC/IB= 10
25°C
-25°C
100°C
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.01
0.1
1
10
0.01 0.1 1 10 100
25°C
100°C100°C
-25°C
Figure 8. NJW0302G Saturation Voltage
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB= 10
NJW0281G (NPN) NJW0302G (PNP)
http://onsemi.com
4
0
10
20
30
40
50
60
70
0.01 0.1 1 10
Figure 9. NJW0281G Current Gain Bandwidth
Product
IC, COLLECTOR CURRENT (A)
fT
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
Figure 10. NJW0302G Current Gain Bandwidth
Product
IC, COLLECTOR CURRENT (A)
fT
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
VCE= 5.0 V
25°C
0
10
20
30
40
50
60
0.01 0.1 1 10
VCE= 5.0 V
25°C
NJW0281G (NPN) NJW0302G (PNP)
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5
PACKAGE DIMENSIONS
TO-3P-3LD
CASE 340AB-01
ISSUE A
G
K
L
C
E
J
H
123
4
D3X
S
B
M
0.25 A
A
P
DIM
A
MIN NOM MAX
MILLIMETERS
19.70 19.90 20.10
B15.40 15.60 15.80
C4.60 4.80 5.00
D0.80 1.00 1.20
E1.45 1.50 1.65
G5.45 BSC
H1.20 1.40 1.60
J0.55 0.60 0.75
K19.80 20.00 20.20
L18.50 18.70 18.90
U5.00 REF
P3.30 3.50 3.70
Q3.10 3.20 3.50
W2.80 3.00 3.20
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
F1.80 2.00 2.20
B
G
B
Q
A
(3°)
SEATING
PLANE
F
U
W
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NJW0281/D
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