ZX5T853G Green 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 100V IC = 6A High Continuous Collector Current ICM = 10A Peak Pulse Current Low Saturation Voltage VCE(sat) < 35mV RSAT = 36m at 6A for a Low Equivalent On-Resistance hFE Specified Up to 10A for a High Gain Hold Up Complementary PNP Type: ZX5T953G Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT223 Case Material: Molded Plastic. "Green" Molding Compound; UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) Applications Motor Driving Line Switching High Side Switches C SOT223 B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product ZX5T853GTA Notes: Compliance AEC-Q101 Marking X5T853 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information X5T 853 591A ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 YWW SOT223 X5T 853 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com May 2015 (c) Diodes Incorporated ZX5T853G Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value 200 100 7 6 10 Unit V V V A A Value 3.0 24 1.6 12.8 42 78 10.5 -55 to +150 Unit Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Note 5) Power Dissipation Linear Derating Factor PD (Note 6) Thermal Resistance, Junction to Ambient Thermal Resistance Junction to Lead Operating and Storage Temperature Range (Note 5) (Note 6) (Note 7) RJA RJA RJL TJ, TSTG W mW/C C/W C ESD Ratings (Note 8) Symbol Value Unit Electrostatic Discharge - Human Body Model Characteristic ESD HBM 4,000 V JEDEC Class 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is surface mounted on 25mm x 25mm with 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 2 of 7 www.diodes.com May 2015 (c) Diodes Incorporated ZX5T853G 10 VCE(sat) Limit 1 DC 1s 100ms 10ms 100m Single Pulse. T amb=25C 10m 100m 1ms 100s See note (5) 1 10 100 VCE Collector-Emitter Voltage (V) Max Power Dissipation (W) IC Collector Current (A) Thermal Characteristics and Derating Information 3.0 2.5 See note (5) 2.0 1.5 1.0 See note (6) 0.5 0.0 0 20 D=0.5 20 Single Pulse 10 D=0.05 D=0.1 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Thermal Resistance (C/W) 30 0 100 Datasheet Number: DS33422 Rev. 3 - 2 100 120 140 160 Single Pulse. T amb=25C 100 See note (5) 10 1 100 Transient Thermal Impedance ZX5T853G 80 Derating Curve See note (5) D=0.2 60 Temperature (C) Safe Operating Area 40 40 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 3 of 7 www.diodes.com May 2015 (c) Diodes Incorporated ZX5T853G Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector-Base Cut-Off Current Collector-Emitter Cut-Off Current Emitter Cut-Off Current Symbol BVCBO BVCER BVCEO BVEBO Min 200 200 100 7 ICBO - ICER R 1k IEBO - Typ 235 235 115 8.1 <1 - Max 20 0.5 Unit V V V V 230 200 60 20 21 50 95 180 1,020 920 26 20 0.5 10 300 35 65 125 220 1,120 1,000 - nA A nA nA A Collector-Emitter Saturation Voltage (Note 9) VCE(sat) Base-Emitter Saturation Voltage (Note 9) Base-Emitter Turn-On Voltage (Note 9) Output Capacitance (Note 9) VBE(sat) VBE(on) Cobo 100 100 30 10 - Transition Frequency fT - 130 - MHz Switching Time ton toff - 41 1,010 - ns Static Forward Current Transfer Ratio (Note 9) Note: hFE - mV mV mV pF Test Condition IC = 100A IC = 1A, RB 1k IC = 10mA IE = 100A VCB = 150V VCB = 150V, TA = +100C VCB = 150V VCB = 150V, TA = +100C VEB = 6V IC = 10mA, VCE = 2V IC = 2A, VCE = 2V IC = 5A, VCE = 2V IC = 10A, VCE = 2V IC = 100mA, IB = 5mA IC = 1A, IB = 100mA IC = 2A, IB = 100mA IC = 5A, IB = 500mA IC = 5A, IB = 500mA IC = 5A, VCE = 2V VCB = 10V. f = 1MHz VCE = 10V, IC = 100mA f = 50MHz VCC = 10V, IC = 1A IB1 = -IB2 = 100mA 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 4 of 7 www.diodes.com May 2015 (c) Diodes Incorporated ZX5T853G Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 0.6 Tamb=25C IC/IB=10 0.5 100m VCE(SAT) (V) VCE(SAT) (V) IC/IB=50 IC/IB=20 IC/IB=10 0.4 100C 0.3 25C 0.2 0.1 -55C 10m 1m 10m 100m 1 0.0 1m 10 10m 100m 1 10 1 10 IC Collector Current (A) IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 250 200 1.0 0.8 150 25C 0.6 100 0.4 -55C 50 0.2 0.0 1m 10m 100m 0 10 1 1.0 0.8 -55C 25C 0.6 100C 0.4 1m IC Collector Current (A) 10m 100m IC Collector Current (A) hFE v IC 1.4 IC/IB=10 1.2 VBE(SAT) (V) 100C Typical Gain (hFE) 1.2 Normalised Gain 1.4 VCE=2V VBE(SAT) v IC VCE=2V VBE(ON) (V) 1.2 1.0 0.8 -55C 25C 0.6 100C 0.4 1m 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 5 of 7 www.diodes.com May 2015 (c) Diodes Incorporated ZX5T853G Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b A1 7 7 A 0 -1 0 e SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 C 6 of 7 www.diodes.com May 2015 (c) Diodes Incorporated ZX5T853G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 7 of 7 www.diodes.com May 2015 (c) Diodes Incorporated