2N 3700 2N 3701 SILICON PLANAR NPN GENERAL PURPOSE AMPLIFIERS The 2N 3700 and 2N 3701 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, intended for small signal, low noise industrial applications. ABSOLUTE MAXIMUM RATINGS Veso Collector-base voltage (I_-= 0) 140 Vv Vceo Collector-emitter voltage (I3= 0) 80 Vv Veso Emitter-base voltage (I= 0) 7 Vv le Collector current 1 A Prot Total power dissipation at Tamp & 25C 0.5 Ww at Tease & 25C 1.8 Ww at Tcase & 100C 1 w Tstge Tj Storage and junction temperature ~65 to 200 C MECHANICAL DATA Dimensions in mm Collector connected 7/76 266THERMAL DATA Rin j-case Thermal resistance junction-case max 97 C/W th samp Thermal resistance junction-ambient max 350 C/W ELECTRICAL CHARACTERISTICS (Tap= 25 C unless otherwise specified) Parameter Test conditions Min. Typ. Max.| Unit lcpo Collector cutoff Vcp= 9OV 10| nA current (I= 0) Vep= 90V Tamp= 150C 10; pA leBo Emitter cutoff Vega OV 10) nA current (1= 0) Visrycpo Collector-base I= 100 uA 140 Vv breakclown voltage (le = 0) Veceo (sus) Collector-emitter Ic= 30 mA 80 Vv sustaining voitage (Ip = 0) Vieryeso Emitter-base le= 100 pA 7 Vv breakdown voltage (lo=0) Vee gat) Collector-emitter {c= 150mA Ig=15mMA 0.2| V saturation voltage Ic=500mA_ 1g=50mA 0.5] V Vee icat) Base-emitter IG=150mA Ip=15mA 1.4] V saturation voltage 267ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.| Unit hee* DC current gain for 2N 3700 le=O1mMA Vee= 10V 50 _ Ig=10mA Voce= 10V 90 - Ie=180mMA Vee= 10V 100 300) 1c=500mA Vc_e= 10V 50 _ IG=1A Vece= 10V 15 - lc=150mMA Vee= 10V Tamp= -85C 40 - for 2N 3701 lc=O0.1mMA Vege= 10V 30 100; Ic=10mA Vce= 10V 40 120) Ilc=150mMA Vee= 10V 40 120) I=500mA Vee= 10V 30 100; te= 1A Vce= 10V 15 - hee Small signal current lc=1mA Voce= SV gain f= 1 kHz for 2N 3700 /80 400; - for 2N 3701 | 30 200) fr Transition frequency Ie=50mMA Voe= 10V = 20 MHz for 2N 3700 | 100 200 | MHz for 2N 3707 {80 200 | MHz Cego Emitter-base Ic= Vep=0.5V Capacitance f= 1 MHz 60| pF Cceo Collector-base le= Vep= 10V capacitance f = 1 MHz , 12| pF YpbCyc Feedback time Ic=10mA Vega 10V constant f=4MHz 25 400} ps * Pulsed: pulse duration = 300 Us, duty cycle = 1% 268