© Semiconductor Components Industries, LLC, 2009
April, 2020 − Rev. 2
1Publication Order Number:
HGTG30N60C3D/D
UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diodes
63 A, 600 V
HGTG30N60C3D
The HGTG30N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49051. The diode
used in anti−parallel with the IGBT is the development type TA49053.
This IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential
Formerly Developmental Type TA49014.
Features
•63 A, 600 V at TC = 25°C
•Typical Fall Time 230 ns at TJ = 150°C
•Short Circuit Rating
•Low Conduction Loss
•Hyperfast Anti−Parallel Diode
•This is a Pb−Free Device
G
E
C
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MARKING DIAGRAM
See detailed ordering and shipping information on page 8 of
this data sheet.
ORDERING INFORMATION
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
G30N60C3D = Specific Device Code
$Y&Z&3&K
G30N60C3D
C
E
G
HGTG30N60C3D
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter Symbol HGTG30N60C3D Unit
Collector to Emitter Voltage BVCES 600 V
Collector Current Continuous
At TC = 25°C
At TC = 110°C
IC25
IC110
63
30
A
A
Average Diode Forward Current at 110°C I(AVG) 25 A
Collector Current Pulsed (Note 1) ICM 252 A
Gate to Emitter Voltage Continuous VGES ±20 V
Gate to Emitter Voltage Pulsed VGEM ±30 V
Switching Safe Operating Area at TJ = 150°C SSOA 60 A at 600 V
Power Dissipation Total at TC = 25°C PD208 W
Power Dissipation Derating TC > 25°C 1.67 W/°C
Operating and Storage Junction Temperature Range TJ, TSTG −40 to 150 °C
Maximum Lead Temperature for Soldering TL260 °C
Short Circuit Withstand Time (Note 2) at VGE = 15 V tSC 4ms
Short Circuit Withstand Time (Note 2) at VGE = 10 V tSC 15 ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360 V, TJ =125°C, RG = 25 W.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
Collector to Emitter Breakdown Voltage BVCES IC = 250 mA, VGE = 0 V 600 − − V
Emitter to Collector Breakdown Voltage BVECS IC = 10 mA, VGE = 0 V 15 25 −V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25°C− − 250 mA
VCE = BVCES TC = 150°C− − 3.0 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15 V TC = 25°C−1.5 1.8 V
TC = 150°C−1.7 2.0 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250 mA, VCE = VGE TC = 25°C 3.0 5.2 6.0 V
Gate to Emitter Leakage Current IGES VGE = ±20 V − − ±100 nA
Switching SOA SSOA TJ = 150°C, VGE = 15 V,
RG = 3 W, L = 100 mH
VCE(PK) = 480 V 200 − − A
VCE(PK) = 600 V 60 − − A
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES −8.1 −V
On−State Gate Charge QG(ON) IC = IC110,
VCE = 0.5 BVCES
VGE = 15 V −162 180 nC
VGE = 20 V −216 250 nC
Current Turn−On Delay Time td(ON)I TJ = 150°C,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15 V,
RG = 3 W,
L = 100 mH
−40 −ns
Current Rise Time trI −45 −ns
Current Turn−Off Delay Time td(OFF)I −320 400 ns
Current Fall Time tfI −230 275 ns
Turn−On Energy EON −1050 −mJ
Turn−Off Energy (Note 3) EOFF −2500 −mJ
Diode Forward Voltage VEC IEC = 30 A −1.75 2.2 V
Diode Reverse Recovery Time trr IEC = 30 A, dIEC/dt = 100 A/ms−52 60 ns
IEC = 1.0 A, dIEC/dt = 100 A/ms−42 50 ns
HGTG30N60C3D
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) (continued)
Parameter UnitMaxTypMinTest ConditionSymbol
Thermal Resistance RqJC IGBT − − 0.6 °C/W
Diode − − 1.3 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). The HGTG30N60C3D was tested per JEDEC standard No. 24−1
Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. Turn−On
losses include diode losses.
TYPICAL PERFORMANCE CURVES
0
9.5 V
9.0 V
8.5 V
25
50
75
100
125
150
7.0 V
7.5 V
8.0 V
0
25
50
75
100
125
150
64
PULSE DURATION = 250 ms, DUTY CYCLE < 0.5%, TC = 25°C
0
0
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
246810
ICE, COLLECTOR TO EMITTER
CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE = 15 V
PULSE DURATION = 250 ms
DUTY CYCLE < 0.5%, VCE = 10 V
TC = 150°C
TC = −40°C
TC = 25°C
10812
15324
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
01 5324
Figure 1. TRANSFER CHARACTERISTICS Figure 2. SATURATION CHARACTERISTICS
Figure 3. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
Figure 4. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
12.0 V 10.0 V
0
25
50
75
100
125
150
PULSE DURATION = 250 ms
DUTY CYCLE < 0.5%, VGE = 10 V
TC = 150°C
TC = −40°C
TC = 25°C
TC = 150°C
TC = −40°CTC = 25°C
PULSE DURATION = 250 ms
DUTY CYCLE < 0.5%,
VGE = 15 V
0
25
50
75
100
125
150
ICE, COLLECTOR TO EMITTER
CURRENT (A)
HGTG30N60C3D
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TYPICAL PERFORMANCE CURVES (continued)
100
200
300
400
500
10
100
500
500
400
300
200
100
10
20
50
30
40
100
200
100
250
300
350
450
500
400
200
150
ISC
tSC
5
10
15
20
25
0
10
20
30
40
50
60
70
5025
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE (°C)
10075 125 150
VGE = 15 V
tSC, SHORT CIRCUIT WITHSTAND
TIME (ms)
1513
ISC, PEAK SHORT CIRCUIT CURRENT (A)
VCE = 360 V, RG = 25 W, TJ = 125°C
10 11 12 14
VGE, GATE TO EMITTER VOLTAGE (V)
td(ON)I, TURN−ON DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 150°C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V
VGE = 10 V
VGE = 15 V
302010
TJ = 150°C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V
VGE = 10 V
VGE = 15 V
td(OFF)I, TURN−OFF DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, TURN−ON RISE TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 150°C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V
VGE = 10 V
VGE = 15 V
TJ = 150°C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V
tfI FALL TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 5. MAXIMUM DC COLLECTOR CURRENT
vs. CASE TEMPERATURE
Figure 6. SHORT CIRCUIT WITHSTAND TIME
Figure 7. TURN−ON DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 8. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 9. TURN−ON RISE TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 10. TURN−OFF FALL TIME vs.
COLLECTOR TO EMITTER CURRENT
605040 302010 605040
302010 605040 302010 605040
VGE = 10 V
VGE = 15 V
HGTG30N60C3D
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TYPICAL PERFORMANCE CURVES (continued)
0
240
120
360
480
600 15
12
9
0
COES
CRES
0
1000
2000
3000
4000
5000
6000
7000
8000
FREQUENCY = 400 kHz
CIES
0
50
100
150
200
250
10
100
500
1
1.0
2.0
3.0
4.0
5.0
6.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
50
LIMITED BY
CIRCUIT
C, CAPACITANCE (pF)
0
EON, TURN−ON ENERGY LOSS (mJ)
EOFF
, TURN−OFF ENERGY LOSS (mJ)
10 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
6030 4020 10 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
6030 4020
VGE = 10 V or 15 V
TJ = 150°C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V
VGE = 10 V
VGE = 15 V
TJ = 150°C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V
VGE = 15 V
VGE = 10 V
fMAX1 = 0.05 / (tD(OFF)I + tD(ON)I)
fMAX2 = (PD − PC) / (EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RqJC = 0.6°C/W
TJ = 150°C, TC = 75°C,
RG = 25 W, L = 100 mH
TJ = 150°C, VGE = 15 V, L = 100 mH
10 20 30 100 200 300 400 500 600
ICE, COLLECTOR TO EMITTER CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
VCE(PK), COLLECTOR EMITTER VOLTAGE (V)
52515 2010 160 20080 120400
VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)
VCE, COLLECTOR TO EMITTER
VOLTAGE (V)
IG(REF) = 3.54 mA, RL = 200 W,TC = 25°C
VGE, GATE TO EMITTER VOLTAGE (V)
VCE = 400 V
VCE = 200 V
VCE = 600 V
Figure 11. TURN−ON ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
Figure 12. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
Figure 13. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 14. SWITCHING SAFE OPERATING AREA
Figure 15. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
Figure 16. GATE CHARGE WAVEFORMS
40 60
6
3
HGTG30N60C3D
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TYPICAL PERFORMANCE CURVES (continued)
60
40
10
0
50
trr
ta
tb
1
10
200
10−510−3100101
10−410−1
10−2
SINGLE PULSE
100
10−1
10−2
0.5
0.2
0.1
0.05
0.01
0.02
0.01
0.1
1
10
100
1 ms
10 ms
DC
10ms
100ms
500
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 17. SOA CHARACTERISTICS
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZqJC x RqJC) + TC
ZqJC, NORMALIZED THERMAL RESPONSE
Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
t1, RECTANGULAR PULSE DURATION (s)
0.50 50
100°C
150°C25°C
TC = 25°C, dIEC/dt = 100 A/ms
1.51.0 2.0 3.02.5 10 30
VEC, FORWARD VOLTAGE (V)
IEC, FORWARD CURRENT (A)
IEC, FORWARD CURRENT (A)
tr, RECOVERY TIMES (ns)
Figure 19. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 20. RECOVERY TIMES vs. FORWARD CURRENT
*Notes:
1. TC = 25°C
2. TC = 25°C
3. Single Pulse
20
30
HGTG30N60C3D
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TEST CIRCUIT AND WAVEFORMS
VDD = 480 V
L = 100 mH
RG = 3 W
Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT Figure 22. SWITCHING TEST WAVEFORMS
+
−
RHRP3060
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF EON
HANDLING PRECAUTIONS FOR IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating − Never exceed the
gate−voltage rating of VGEM. Exceeding the rated
VGE can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open−circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have an
internal monolithic zener diode from gate to
emitter. If gate protection is required an external
zener is recommended.
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows fMAX1 or fMAX2 whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05 / (tD(OFF)I + tD(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. tD(OFF)I and tD(ON)I are defined in
Figure21.
Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. tD(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM − TC) /
RqJC. The sum of device switching and conduction losses
must not exceed PD. A 50% duty factor was used (Figure 13)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE) / 2.
EON and EOFF are defined in the switching waveforms
shown in Figure21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is the
integral of the instantaneous power loss during turn−off. All
tail losses are included in the calculation for EOFF; i.e. the
collector current equals zero (ICE = 0).
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ORDERING INFORMATION
Part Number Package Brand Shipping
HGTG30N60C3D TO−247 G30N60C3D 450 Units / Tube
NOTE: When ordering, use the entire part number.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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