2N6052 Transistors PNP Darlington Transistor Military/High-RelN V(BR)CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (oC)200o I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750 h(FE) Max. Current gain.18k @I(C) (A) (Test Condition)6.0 @V(CE) (V) (Test Condition)3.0 f(T) Min. (Hz) Transition Freq4.0M @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)3.0 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)12 @I(B) (A) (Test Condition)120m t(d) Max. (s) Delay time. t(r) Max. (s) Rise time t(on) Max. (s) On time.