Actual size
Crystal oscillator
Specifications (characteristics)
Item
Symbol
Specifications
Conditions / Remarks
Output frequency range
f0
1MHz to 60MHz
Please contact us about available
frequencies.
Supply voltage
VCC
1.6V to 3.6V
2.5 V Typ.
2.2 V to 3.0 V
3.3 V Typ.
2.7 V to 3.6 V
Storage temperature
T_stg
-40 C to +125 °C
Storage as single product.
Operating temperature
T_use
-40 C to +85 °C / -40 C to +105 °C
Frequency tolerance
f_tol
S: 25 10-6
-20 C to +70 C
L:±50 × 10-6
-40 C to +85 C
Y:±50 × 10-6, W:±100 × 10-6
-40 C to +105 C
Current consumption
ICC
1.6 mA Max.
1.8 mA Max.
No load condition 1MHz<f020MHz
2.0 mA Max.
2.2 mA Max.
No load condition 20MHz<f040MHz
2.4 mA Max.
2.6 mA Max.
No load condition 40MHz<f060MHz
Stand-by current
I_std
2.5 µA Max.
2.7 µA Max.
ST
=GND
Symmetry
SYM
45 % to 55 %
50 % VCC level
L_CMOS 15 pF
Output voltage
VOH
90% Vcc Min.
VOL
10% Vcc Max..
Output load condition
(CMOS)
L_CMOS
15 pF Max.
Input voltage
VIH
80 % VCC Min.
ST
terminal
VIL
20 % VCC Max.
Rise time and Fall time
tr/ tf
3 ns Max.
20 % VCC to 80 % VCC level,L_CMOS=15 pF
Start-up time
t_str
3 ms Max.
t=0 at 90 % VCC+85C,(+105 °C.)
Frequency aging
f_aging
3 10-6 / year Max.
+25 °C, First year,
VCC=1.8 V, 2.5 V, 3.3 V
SSB Phase noise
C/N
-145 dBc/Hz Typ.
@1kHz ,fo=48MHz
-158 dBc/Hz Typ.
@100kHz ,fo=48MHz
-161 dBc/Hz Typ.
@Floor Lv.
External dimensions (Unit:mm)
Footprint (Recommended) (Unit:mm)
CRYSTAL OSCILLATOR
SPXO
SG-210 STF
Frequency range : 1 MHz to 60 MHz
Supply voltage : 1.6 V to 3.6 V
Function : Standby(
ST
)
External dimensions : 2.5 × 2.0 × 0.8 mm
Operation temperature : -40 to +105 C
Product Number (please contact us)
X1G004171xxxx00
25.0
O
F123A
2.50.15
0.9
2.00.15
#2
#1
#2
#4
#3
0.80.1
#3
0.8
0.6
#1
#4
0.7
Pin map
Pin
Connection
1
ST
2
GND
3
OUT
4
VCC
Note.
ST pin = HIGH or "open" : Specified frequency output.
ST pin = LOW : Output is high impedance, oscillation stops.
1.3
Resist
C
(ex. 0.01 µF)
#1
#2
#3
#4
1.7
1.1
0.9
To maintain stable operation, provide a 0.01uF to 0.1uF by-pass
capacitor at a location as near as possible to the power source
terminal of the crystal product (between Vcc - GND).