COMMERCIAL LASERS
Key Features •200mWkink-freepower
•Narrowspectralwidth
•Highefficiency
•Lowastigmatism
•Highreliability
High-resolution applications including optical data storage, image recording,
spectral analysis, printing, point-to-point free-space communications and
frequency doubling all require diffraction-limited sources. Faster writing, wider
dynamic range and better signal-to-noise ratio may be achieved with JDSU’s
high-reliability 5400 Series single-mode diode lasers.
Available in power levels up to 200 mW kink-free, this advanced diode
laser combines a quantum well structure and a real-refractive index-guided
single-mode waveguide to provide high power, low astigmatism, narrow spectral
width and a single spatial mode Gaussian far field. Our 5400 Series diode lasers
are among the most reliable high-power diode lasers available in the industry
today.
The 5400 Series diode lasers operate in single longitudinal mode under some
conditions. Like in all Fabry-Perot index-guided diode lasers, spectral broadening,
mode hopping and longitudinal mode instability may occur due to small changes
in drive current, diode-junction temperature or optical feedback.
The unique diode structure features high reliability with long operating life and
very low early failure rate. The highest brightness (20 MW/cm2 steradian) is
provided by our 5430.
Applications
•Illumination
•Printing
•Sensing
•Medicalapplications
•Imaging
Diode Lasers, Single-mode 50 to 200 mW, 810/830/852 nm
54xx Series
north america: 800 498-JDSU (5378) webSite: www.jdsu.comworlDwiDe: +800 5378-JDSU
Dimensions Diagram
2
54XX SERIES DIODE LASERS
(Specifications in inches [mm] unless otherwise noted.)
Standard Tolerances
inches: x.xx = ±0.02 mm: x.x = ±0.5
x.xxx = ±0.010 x.xx = ±0.25
Package Style: TO-56 Window (J1)
Pinout
Pin Description
1 Laser cathode (–)
2 Laser anode, MPD cathode
and case ground
3 Monitor photodiode anode (+)
20.17
(4.2)
0.05 (1.3)
0.14
(3.6)
0.08
(2.0)
0.04
(1.0)
0.26
(6.5)
0.14
(3.6)
0.10 (2.4)
Window: AR Coating, Both Surfaces
Thickness: 0.010 ±0.001
(0.25 ±0.03)
Laser Facet Depth
= 0.05 (1.2) Nom.
θ
θ
3
1
Laser
Output
3
54XX SERIES DIODE LASERS
Electro-optical Specifications
Parameter Symbol 5400 Series 5410 Series Unit
Min. Typ. Max. Min. Typ. Max.
LaserCharacteristics
CW output power, kink-free2 Po – – 50 – – 100 mW
Center wavelength lc – (note5) – – (note5) –
Spectral width1 Dl – 3 5 – 3 5 nm
Slope efficiency hD = Po/(Iop–Ith) 0.75 0.85 – 0.75 0.85 – mW/mA
Conversion efficiency h = Po/(IopVop) – 30 – – 30 – %
Emitting dimensions W x H – 3 x 1 – – 3 x 1 – µm
FWHM beam divergence
Parallel to junction q// – 9 – – 9 – degrees
Perpendicular to junction q^ – 30 – – 30 – degrees
Thresholdcurrent Ith – 35 45 – 35 45 mA
Operatingcurrent Iop – 95 105 – 160 170 mA
Operating voltage Vop – (note4) – – (note4) –
Series resistance Rs – 4.0 6.0 – 4.0 6.0 W
Thermal resistance Rth – 60 – – 60 – °C/W
Recommended case temperature Tc -20 – 30 -20 – 30 °C
 
AbsoluteMaximumRatings
Reverse voltage Vrl – – 3 – – 3 V
Case operating temperature Top -20 – 50 -20 – 50 °C
Storage temperature range Tstg -40 – 80 -40 – 80 °C
Lead soldering temperature Tis – – 250 – – 250 °C (5 sec.)
 
MonitorPhotodiode
Sensitivity
G1 package – 0.1 – 20 0.1 – 20 µA/mW
J1 package – 3.0 – 24 3.0 – 24 µA/mW
Capacitance – – 6 – – 6 – pF
Breakdown voltage Vbd – 25 – – 25 – V
Operating voltage Vop – 10 – – 10 – V
1. Emission bandwidth for 90% integrated power.
2. Typical values at 25°C and 0.6 NA collection optics.
3. Features common to all 5400 series diode lasers include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
ITH2 = ITH1 exp [(T2 – T1)/T0] where T0 is a device constant of about 110°K.
d. Temperature coefficient of operating current is approximately 0.5 to
0.7% per °C.
4. Forward voltage is typically: Vf=1.5V+Iop x Rs.
5. Wavelength ranges for the 5400 and 5410 series:
800 – 820 nm
810 – 850 nm
842 – 862 nm
A variety of part numbers are available that each designate a particular subset within these wavelength ranges. Consult tables on page 5.
6. Astigmatism is less than 5 µm.
Available Configurations 5400 Series 5410 Series 5420 Series 5430 Series
5401 5411 5421 5431
4
54XX SERIES DIODE LASERS
Electro-optical Specifications
Parameter Symbol 5420 Series 5430 Series Unit
Min. Typ. Max. Min. Typ. Max.
LaserCharacteristics
CW output power, kink-free2 Po – – 150 – – 200 mW
Center wavelength lc – (note5) – – (note5) –
Spectral width1 Dl – 3 5 – 3 5 nm
Slope efficiency hD = Po/(Iop–Ith) 0.75 0.85 – 0.75 0.85 – mW/mA
Conversion efficiency h = Po/(IopVop) – 30 – – 30 – %
Emitting dimensions W x H – 3 x 1 – – 3 x 1 – µm
FWHM beam divergence
Parallel to junction q// – 9 – – 9 – degrees
Perpendicular to junction q^ – 30 – – 30 – degrees
Thresholdcurrent Ith – 35 45 – 40 50 mA
Operatingcurrent Iop – 210 230 – 270 300 mA
Operating voltage Vop – (note4) – – (note4) –
Series resistance Rs – 4.0 6.0 – 4.0 6.0 W
Thermal resistance Rth – 60 – – 60 – °C/W
Recommended case temperature Tc -20 – 30 -20 – 30 °C
 
AbsoluteMaximumRatings
Reverse voltage Vrl – – 3 – – 3 V
Case operating temperature Top -20 – 50 -20 – 50 °C
Storage temperature range Tstg -40 – 80 -40 – 80 °C
Lead soldering temperature Tis – – 250 – – 250 °C (5 sec.)
 
MonitorPhotodiode
Sensitivity – 0.1 – 20 0.1 – 20 µA/mW
Capacitance – – 6 – – 6 – pF
Breakdown voltage Vbd – 25 – – 25 – V
Operating voltage Vop – 10 – – 10 – V
1. Emission bandwidth for 90% integrated power.
2. Typical values at 25°C and 0.6 NA collection optics.
3. Features common to all 5400 series diode lasers include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
ITH2 = ITH1 exp [(T2 – T1)/T0] where T0 is a device constant of about 110°K.
d. Temperature coefficient of operating current is approximately 0.5 to
0.7% per °C.
4. Forward voltage is typically: Vf=1.5V+Iop x Rs.
5. Wavelength ranges for the 5420 series:
800 – 820 nm
810 – 850 nm
842 – 862 nm
Wavelength range for the 5430 series is limited to 820 – 840 nm.
A variety of part numbers are available that each designate a particular subset within these wavelength ranges. Consult tables on page 5.
6. Astigmatism is less than 5 µm.
Continued
5
54XX SERIES DIODE LASERS
Typical Optical Characteristics
Ordering Information
For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU
directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at customer.service@jdsu.com.
100
40 80 120 160 2000
5410
CW Output Power (mW)
5400
50
Current (mA) θ (degrees)
40 20 02040
FWHM
= 30°
Light vs. Current
Characteristics
Light vs. Current
Characteristics
Light vs. Current
Characteristics
Far Field Energy
Distribution
Far Field Energy
Distribution
150
50 100 150 2000
75
Current (mA)
5420
200
60 120 180 240 3000
100
Current (mA)
5430
θ (degrees)
20 10 01020
200 mW
160 mW
100 mW
FWHM
= 9°
Sample: 54-00202
Part Number Power Wavelength
54-00202 50 mW 810 (±5) nm
54-00203 50 mW 830 (-10/+20) nm
54-00204 50 mW 852 (±10) nm
54-00205 100 mW 810 (±5) nm
54-00206 100 mW 830 (-10/+20) nm
54-00207 100 mW 852 (±10) nm
54-00210 150 mW 810 (±5) nm
54-00211 150 mW 830 (±10) nm
54-00212 150 mW 852 (±10) nm
54-00213 200 mW 830 (±10) nm
54-00214 200 mW 852 (±10) nm
54XX SERIES DIODE LASERS
north america: 800 498-JDSU (5378) webSite: www.jdsu.comworlDwiDe: +800 5378-JDSU
User Safety
SafetyandOperatingConsiderations
The laser light emitted from this diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the
diode laser or into the collimated beam along its optical axis when the device is in operation.
CAUTION:THEUSEOFOPTICALINSTRUMENTSWITHTHISPRODUCTWILLINCREASEEYEHAZARD.
Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used
with the component must be employed such that the maximum peak optical power cannot be exceeded. CW diode lasers
may be damaged by excessive drive current or switching transients. When using power supplies, the diode laser should be
connected with the main power on and the output voltage at zero. The current should be increased slowly while monitoring
the diode laser output power and the drive current.
Device degradation accelerates with increased temperature, and therefore careful attention to minimize the case temperature
is advised. For example, life expectancy will decrease by a factor of four if the case is operated at 50°C rather than 30°C.
A proper heatsink for the diode laser on a thermal radiator will greatly enhance laser life. Firmly mount the laser on a radiator
with a thermal impedance of less than 2°C/W for increased reliability.
ESDPROTECTION–Electrostaticdischargeistheprimarycauseofunexpecteddiodelaserfailure.Takeextremeprecaution
to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling diode lasers.
Labeling
21CFR1040.10Compliance
Because of the small size of these devices, each of the labels shown is attached to the individual shipping container. They are
illustrated here to comply with 21 CFR 1040.10 as applicable under the Radiation Control for Health and Safety Act of 1968.
SerialNumberIdentificationLabel OutputPowerDangerLabel PackageApertureLabels
JDS Uniphase Corporation
MODEL:
MANUFACTURED:
This laser product complies with 21 CFR 1040 as applicable
WAVELENGTH: I op:
S/N:
JDS Uniphase Corporation
S A N J O S E , C A L I F O R N I A 9 5 1 3 4 U. S. A.
MODEL:
MANUFACTURED:
This laser product complies with 21 CFR 1040 as applicable
WAVELENGTH: I op:
S/N:
INVISIBLE LASER
RADIATION IS EMIT-
TED AS SHOWN.
DANGER Laser
Radiation
3011
*SEE MANUAL
INVISIBLE LASER RADIATION*
GaAlAs Diode 500 mW avg.
CLASS III B LASER PRODUCT
3009
DANGER
AVOID DIRECT
EXPOSURE TO BEAM
INVISIBLE LASER
RADIATION IS EMIT-
TED AS SHOWN.
DANGER
INVISIBLE LASER
RADIATION IS EMIT-
TED AS SHOWN.
DANGER Laser
Radiation
3012
Laser
Radiation
3052
J1 Package Diodes
Productspecificationsanddescriptionsinthisdocumentsubjecttochangewithoutnotice.©2011JDSUniphaseCorporation10127872010121154XXDIODELASER.DS.CL.AEDecember2011
*SEE MANUAL
INVISIBLE LASER RADIATION*
GaAlAs Diode 500 mW avg.
CLASS III B LASER PRODUCT
3009
DANGER
AVOID DIRECT
EXPOSURE TO BEAM