Parameter Test Conditions Min. Typ. Max. Unit
LAB
SEME
BDS10IG
BDS11IG
BDS12IG
Prelim. 9/98
BDS10 VCB = 60V
BDS11 VCB = 80V
BDS12 VCB = 100V
BDS10 VCE = 30V
BDS11 VCE = 40V
BDS12 VCE = 50V
VEB = 5V
BDS10
BDS11 IC= 100mA
BDS12
IC= 5A IB= 0.5A
IC= 10A IB= 2.5A
IC= 10A IB= 2.5A
IC= 5A VCE = 4V
IC= 0.5A VCE = 4V
IC= 5A VCE = 4V
IC= 10A VCE = 4V
IC= 0.5A VCE = 4V
500
500
500
1
1
1
1
60
80
100 1
3
2.5
1.5
40 250
15 150
5
3
m
A
mA
mA
V
V
V
V
MHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
THERMAL DATA
RTHj-case Thermal resistance junction - case Max. 1.4°C/W
RTHcase-sink Thermal resistance case - heatsink ** Typ. 1.0°C/W
RTHj-a Thermal resistance junction - ambient Max. 80°C/W
** Smooth flat surface using thermal grease.
Parameter Test Conditions Max. Unit
ton
ts
tr
On Time (td+ tr)
Storage Time
Fall Time
IC= 4A VCC = 30V IB1 = 0.4A
IC= 4A VCC = 30V
IB1 = –IB2 = 0.4A
0.7
1.0
0.8
m
s
m
s
m
s
SWITCHING CHARACTERISTICS
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
VBE(sat)*
VBE*
hFE*
fT
Collector cut-off current
(IE= 0)
Collector cut-off current
(IB= 0)
Emitter cut-off current
(IC= 0)
Collector - Emitter
sustaining voltage (IB= 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
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