Data Sheet Schottky barrier Diode RB530S-30 Applications General rectification Land size figure (Unit : mm) Dimensions (Unit : mm) 0.6 0.8 1.7 Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability EMD2 Construction Silicon epitaxial planer Structure Taping specifications (Unit : mm) 0.20.05 1.50.05 2.00.05 1.550.05 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Electical characteristics (Ta=25C) Parameter Forward voltage Reverse current www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Symbol VF IR Empty pocket Limits 30 100 500 125 -40 to +125 Min. - 1/3 2.00.05 4.00.1 Typ. - 1.25 0.06 1.260.05 00 3.50.05 0.6 1.25 1.30.06 0.06 0 0 2.400.05 2.450.1 0.5 0.950.06 0.900.05 0 8.00.15 1.750.1 4.00.1 0.2 0.760.05 0.750.05 Unit V mA mA C C Max. 0.45 0.5 Unit V A Conditions IF=10mA VR=10V 2011.03 - Rev.B Data Sheet RB530S-30 Electical characteristics curves Ta=125 10 Ta=75C 1 Ta=-25C 0.1 Ta=25C 0.01 Ta=75C 10000 1000 Ta=25C 100 10 Ta=-25C 1 200 300 400 500 0 600 370 Ta=25C VF=10mA n=30pcs 1 30 0 350 340 AVE : 347.5mV 330 800 700 600 500 400 300 AVE : 108.3nA 200 Ta=25C f=1MHz VR=0V n=10pcs 17 16 15 AVE : 16.28pF 14 13 12 11 0 10 Ct DISPERSION MAP 10 AVE : 4.20A 5 10 PEAK SURGE FORWARD CURRENT : I FSM(A) 8.3ms PEAK SURGE FORWARD CURRENT : I FSM(A) 10 1cyc Ifsm 8.3ms 8.3ms 1cyc 5 0 0 Ifsm t 5 0 1 10 100 1 10 100 TIME : t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 0.1 1000 0.02 FORWARD POWER DISSIPATION : Pf(W) 100 DC 0.08 Rth(j-a) Rth(j-c) 10 D=1/2 0.06 Sin(=180) 0.04 0.02 0.015 0.01 DC 0.005 Sin(=180) 1 0.001 20 18 IR DISPERSION MAP Ifsm 15 19 100 VF DISPERSION MAP 20 10 20 Ta=25C VR=10V n=30pcs 900 320 15 5 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 1000 REVERSE CURRENT : IR(nA) FORWARD VOLTAGE : V F(mV) 20 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 360 10 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100 REVERSE POWER DISSIPATION : PR (W) 0 PEAK SURGE FORWARD CURRENT : I FSM(A) 10 0.1 0.001 TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) f=1MH 100000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=125C 100 REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) 100 1000000 1000 D=1/2 0 0.01 0.1 1 10 100 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1000 0 0.05 0.1 0.15 0.2 0 0 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2/3 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 2011.03 - Rev.B Data Sheet RB530S-30 0.3 0A 0V DC 0.2 Io VR t T D=t/T VR=15V Tj=125C D=1/2 0.1 Sin(=180) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0.3 0A 0V 0.2 DC Io VR t T D=t/T VR=15V Tj=125C 100 125 D=1/2 0.1 Sin(=180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0 25 50 75 CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) 3/3 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A