Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky barrier Diode
RB530S-30
Applications Dimensions (Unit : mm)
General rectification
Features
1)Ultra small mold type. (EMD2)
2)Low IR
3)High reliability
Construction Structure
Silicon epitaxial planer
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Symbol Unit
VRV
Io mA
IFSM mA
Tj C
Tstg C
Electical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit
Forward voltage VF- - 0.45 V IF=10mA
IR- - 0.5 μAVR=10V
Reverse voltage (DC)
Junction temperature
Forward current surge peak (60Hz/1cyc) 500
Average rectified forward current 100
Paramete
r
Reverse current
Land size figure (Unit : mm)
Paramete
r
Limits
Conditions
125
Storage temperature -40 to +125
30
EMD2
0
.
8
1.7
0.6
0.95±0.06
0
4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.05
3.5±0.05 1.75±0.1
8.0±0.15
0.2±0.05
0.76±0.05
1.26±0.05
0
φ0.5
0.6
2.0±0.05
1.3±0.06
0
2.45±0.1
空ポケット
0.2
φ1.55±0.05
2.40±0.05
0.90±0.05 0.75±0.05
1.25 0.06
0
1.25 0.06
0
Empty pocket
1/3 2011.03 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB530S-30
Electical characteristics curves
0
0.005
0.01
0.015
0.02
0 5 10 15 20 25 30
0
0.02
0.04
0.06
0.08
0.1
0 0.05 0.1 0.15 0.2
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
0
5
10
15
20
AVE : 4.20A
8.3ms
Ifsm 1cyc
0
5
10
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
1 10 100
t
Ifsm
10
11
12
13
14
15
16
17
18
19
20
AVE : 16.28pF
Ta=25C
f=1MHz
VR=0V
n=10pcs
0
100
200
300
400
500
600
700
800
900
1000
AVE : 108.3nA
320
330
340
350
360
370
1
10
100
0 5 10 15 20
0.1
1
10
100
1000
10000
100000
1000000
0102030
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT : IF(mA)
REVERSE CURRENT : IR(nA)
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE : VF(mV)
REVERSE CURRENT : IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : IFSM(A)
TIME : t(ms)
IFSM-t CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
FORWARD POWER
DISSIPATION : Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION : PR (W)
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
f=1MHｚ
Ta=25C
VF=10mA
n=30pcs
Ta=25C
VR=10V
n=30pcs
AVE : 347.5mV
Ta=-25C
Ta=125C
Ta=75C
Ta=25CTa=-25C
Ta=125
Ta=25C
Ta=75C
DC
D=1/2
Sin(=180)
Sin(=180)
DC
D=1/2
2/3 2011.03 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB530S-30
0
0.1
0.2
0.3
0 25 50 75 100 125
0
0.1
0.2
0.3
0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
TTj=125C
D=t/T
tVR
Io
V
R
=15V
0
A
0V
TTj=125C
D=t/T
tVR
Io
V
R
=15V
0A
0V
Sin(=180)
DC
D=1/2
Sin(=180)
DC
D=1/2
3/3 2011.03 - Rev.B
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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