ON Semiconductor BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS * DC Current Gain -- hFE = 40 (Min) @ IC = 0.15 Adc * BD 136, 138, 140 are complementary with BD 135, 137, 139 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-09 TO-225AA TYPE IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIII IIIIII IIIIII IIII MAXIMUM RATINGS Rating Symbol Type Value Unit Collector-Emitter Voltage VCEO BD 136 BD 138 BD 140 45 60 80 Vdc Collector-Base Voltage VCBO BD 136 BD 138 BD 140 45 60 100 Vdc Emitter-Base Voltage VEBO 5 Vdc IC 1.5 Adc Collector Current Base Current IB 0.5 Adc Total Device Dissipation@ TA = 25C Derate above 25C PD 1.25 10 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 12.5 100 Watt mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 10 1 Publication Order Number: BD136/D BD136 BD138 BD140 BD140-10 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case JC 10 C/W Thermal Resistance, Junction to Ambient JA 100 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Collector-Emitter Sustaining Voltage* (IC = 0.03 Adc, IB = 0) Type Min Max BD 136 BD 138 BD 140 45 60 80 -- -- -- -- -- 0.1 10 BVCEO Unit Vdc Adc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125 C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO -- 10 hFE* 25 40 -- 250 63 25 160 -- VCE(sat)* -- 0.5 Vdc VBE(on)* -- 1 Vdc DC Current Gain (IC = 0.005 A, VCE = 2 V) Adc -- ALL (IC = 0.15 A, VCE = 2 V) ALL BD140-10 (IC = 0.5 A, VCE = 2 V) Collector-Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc) Base-Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc) *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. IC, COLLECTOR CURRENT (AMP) 10 5.0 5 ms 2.0 1.0 TJ = 125C 0.5 0.1 ms 0.5 ms dc 0.2 0.1 0.05 BD136 BD138 BD140 0.02 0.01 1 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active-Region Safe Operating Area http://onsemi.com 2 80 BD136 BD138 BD140 BD140-10 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE W -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 3 DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- BD136 BD138 BD140 BD140-10 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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