ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC23.6 mV/oC
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA
TJ = 55 oC10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 11.8 3V
∆VGS(th)/∆TJGate Threshold VoltageTemp.Coefficient ID = 250 µA, Referenced to 25 oC-4 mV/oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.5 A 0.082 0.095 Ω
TJ = 125 oC0.122 0.152
VGS = 4.5 V, ID = 2.0 A 0.113 0.145
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 10 A
gFS Forward Transconductance VDS = 5 V, ID = 2.5 A 5S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 220 pF
Coss Output Capacitance f = 1.0 MHz 50 pF
Crss Reverse Transfer Capacitance 25 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)Turn - On Delay Time VDD = 5 V, ID = 1 A, 6 12 ns
trTurn - On Rise Time VGS = 10 V, RGEN = 6 Ω10 18 ns
tD(off) Turn - Off Delay Time 12 22 ns
tfTurn - Off Fall Time 2 6 ns
QgTotal Gate Charge VDS = 15 V, ID = 2.5 A 2.3 3.2 nC
Qgs Gate-Source Charge VGS = 5 V 0.7 1nC
Qgd Gate-Drain Charge 0.9 1.3 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
ISContinuous Source Diode Current 0.75 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.75 A (Note 2) 0.78 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed
by design while RθCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC6561AN Rev.C
c. 180OC/W on a minimum pad.
b. 140OC/W on a 0.005 in2 pad of
2oz copper.
a. 130OC/W on a 0.125 in2 pad of
2oz copper.