Transistors MSG43002 SiGe HBT type For low-noise RF amplifier 3 * Compatible between high breakdown voltage and high cutoff frequency * Low-noise, high-gain amplification * Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm x 1.0 mm (height 0.39 mm) 2 1 0.39+0.01 -0.03 1.000.05 Absolute Maximum Ratings Ta = 25C 3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open) VEBO 1 V Collector current IC 60 mA Collector power dissipation* PC 100 mW Junction temperature Tj 125 C Storage temperature Tstg -55 to +125 C 0.250.05 1 0.500.05 0.250.05 0.150.05 0.050.03 0.350.01 Features 0.600.05 Unit: mm 2 0.050.03 0.650.01 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 5T Note) *: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm x 12 mm x 0.8 mm. Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 Forward current transfer ratio hFE VCE = 3 V, IC = 6 mA Transition frequency fT VCE = 3 V, IC = 20 mA, f = 2 GHz Forward transfer gain S21e2 VCE = 3 V, IC = 20 mA, f = 2 GHz Min Typ Max Unit VCB = 9 V, IE = 0 1 A VCE = 6 V, IB = 0 1 A 1 A 220 100 7.5 19 GHz 10.5 dB Noise figure NF VCE = 3 V, IC = 6 mA, f = 2 GHz 1.4 2.0 dB Collector output capacitance (Common base, input open circuited) Cob VCB = 3 V, IE = 0, f = 1 MHz 0.4 0.7 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: October 2004 SJC00296BED 1 MSG43002 PC Ta IC VCE hFE IC 120 80 40 70 A 60 A 8 50 A 40 A 30 A 4 20 A 0 40 80 0 120 Ambient temperature Ta (C) 0 80 40 4 0 0.01 6 15 10 5 10 1 10 15 VCE = 3 V f = 2 GHz f = 1 MHz 0.7 10 0.6 0.5 0.4 0.3 5 0 -5 0.2 0.1 100 0 2 4 -10 0.1 6 1 10 Collector current IC (mA) Collector-base voltage VCB (V) Collector current IC (mA) S21e2 IC NF IC S11 , S22 VCE = 3 V f = 2 GHz VCE = 3 V IC = 10 mA 1.0 VCE = 3 V f = 2 GHz 6 100 0.5 2.0 Noise figure NF (dB) 2 12 100 GP I C 0.8 Power gain GP (dB) Collector output capacitance C (pF) (Common base, input open circuited) ob 20 0.1 Collector current IC (mA) Cob VCB VCE = 3 V f = 2 GHz 0 1 2 Collector-emitter voltage VCE (V) fT I C 25 Transition frequency fT (GHz) 120 10 A 0 Forward transfer gain S21e (dB) Forward current transfer ratio hFE Collector current IC (mA) Collector power dissipation PC (mW) VCE = 3 V 160 IB = 80 A 12 8 4 4 S11 2 S22 -2.0 - 0.5 0 1 10 Collector current IC (mA) 2 100 1 0 0 0.1 1 10 Collector current IC (mA) SJC00296BED 100 -1.0 MSG43002 S21e2, S12e2 f Forward transfer coefficient S21e2, Reverse transfer coefficient S12e2 (dB) 40 20 S21e2 0 -20 -40 S12e2 0 1 2 3 Frequency f (GHz) SJC00296BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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