Transistors
1
Publication date: October 2004 SJC00296BED
MSG43002
SiGe HBT type
For low-noise RF amplifier
■Features
•Compatible between high breakdown voltage and high cutoff fre-
quency
•Low-noise, high-gain amplification
•Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 9 V, IE = 01µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 6 V, IB = 01µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 1 V, IC = 01µA
Forward current transfer ratio hFE VCE = 3 V, IC = 6 mA 100 220
Transition frequency fTVCE = 3 V, IC = 20 mA, f = 2 GHz 19 GHz
Forward transfer gain S21e2VCE = 3 V, IC = 20 mA, f = 2 GHz 7.5 10.5 dB
Noise figure NF VCE = 3 V, IC = 6 mA, f = 2 GHz 1.4 2.0 dB
Collector output capacitance Cob VCB = 3 V, IE = 0, f = 1 MHz 0.4 0.7 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 9V
Collector-emitter voltage (Base open) VCEO 6V
Emitter-base voltage (Collector open) VEBO 1V
Collector current IC60 mA
Collector power dissipation* PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Marking Symbol: 5T
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) *: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm × 12
mm × 0.8 mm.
0.60
±0.05
1.00
±0.05
2
1
3
0.39
+0.01
−0.03
0.25
±0.05
0.25
±0.05
0.50
±0.05
0.65
±0.01
0.15
±0.05
2
1
0.35
±0.01
0.05
±0.03
0.05
±0.03
3
MSG43002
2SJC00296BED
fT ICCob VCB GP IC
PC TaIC VCE hFE IC
S21e2 ICNF ICS11 , S22
0 40 12080
0
120
40
80
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
02 46
0
12
4
8
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
I
B
= 80 µA
70 µA
50 µA
40 µA
30 µA
20 µA
10 µA
60 µA
0.01 10.1 10 100
0
120
160
40
80
Collector current IC (mA)
Forward current transfer ratio hFE
V
CE
= 3 V
1 10 100
0
25
5
10
15
20
Collector current IC (mA)
Transition frequency fT (GHz)
VCE = 3 V
f = 2 GHz
024 6
0.1
0.6
0.7
0.8
0.2
0.3
0.4
0.5
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
f = 1 MHz
0.1 101 100
–10
–5
0
5
10
15
Collector current IC (mA)
Power gain G
P
(dB)
V
CE
= 3 V
f = 2 GHz
1 10 100
0
12
4
8
Collector current IC (mA)
Forward transfer gain S
21e
2
(dB)
V
CE
= 3 V
f = 2 GHz
0.1 101 100
0
6
2
4
Collector current I
C
(mA)
Noise figure NF (dB)
V
CE
= 3 V
f = 2 GHz
VCE = 3 V
IC = 10 mA
0.5
0
1.0
2.0
S11
S22
−2.0
−1.0
− 0.5
∞
1
MSG43002
3
SJC00296BED
S21e2, S12e2 f
0123
–40
–20
0
20
40
S21e2
Frequency f (GHz)
Forward transfer coefficient S21e2,
Reverse transfer coefficient S12e2 (dB)
S12e2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
